Quantitative Rheed Analysis of Biaxially-Textured Polycrystalline MgO Films on Amorphous Substrates Grown by Ion Beam-Assisted Deposition

1999 ◽  
Vol 585 ◽  
Author(s):  
R. T. Brewer ◽  
J. W. Hartman ◽  
Harry A. Atwater
Keyword(s):  
Crystallographic Texture ◽  
Incidence Angle ◽  
Ion Beam ◽  
Orientation Distribution ◽  
High Energy ◽  
Polycrystalline Films ◽  
Plane Orientation ◽  
Ion Beam Assisted Deposition ◽  
Kinematic Approximation ◽  
Amorphous Substrates

AbstractWe have developed a computer simulation based on analytic calculation of reflection high energy electron diffraction (RHEED) patterns in the kinematic approximation for mosaic polycrystalline films for given values of electron beam incidence angle, polycrystalline texture, in-plane orientation distribution, and grain size. Although RHEED is most appropriately modeled using dynamical scattering theory, the computational efficiency of the kinematic approximation has enabled the development of a model suitable for real time measurement of crystallographic texture and in-plane orientation distributions for biaxially-textured films grown by ion beam-assisted deposition (IBAD). Using the simulation, we can quantitatively determine how RHEED spot shapes and relative intensities depend on the crystallographic texture and in-plane orientation distribution of polycrystalline films. RHEED patterns taken at 25 keV with incidence angle in the range 1–5 degrees from 10 nm thick, nominally [100]-textured MgO films grown on amorphous Si3N4 by IBAD were analyzed by comparing experimental RHEED phi rocking curves with those predicted by the simulation. For some films, an additional 200 nm thermally-grown MgO homoepitaxial layer was grown on top of the IBAD MgO layer. The model enables a quantitative correlation between biaxial texture and RHEED measurements. RHEED results are compared to X-ray rocking curve film analysis.

scholarly journals In Situ Biaxial Texture Analysis of Mgo Films During Growth on Amorphous Substrates by Ion Beam-Assisted Deposition

2001 ◽  
Vol 672 ◽  
Author(s):  
Rhett T. Brewer ◽  
Paul N. Arendt ◽  
James R. Groves ◽  
Harry A. Atwater
Keyword(s):  
Film Thickness ◽  
Ion Beam ◽  
Orientation Distribution ◽  
X Ray ◽  
Biaxial Texture ◽  
Plane Orientation ◽  
Transmission Electron ◽  
Out Of Plane ◽  
Amorphous Substrates

ABSTRACTWe used a previously reported kinematical electron scattering model1 to develop a RHEED based method for performing quantitative analysis of mosaic polycrystalline thin film in-plane and out-of-plain grain orientation distributions. RHEED based biaxial texture measurements are compared to X-Ray and transmission electron microscopy measurements to establish the validity of the RHEED analysis method. In situ RHEED analysis reveals that the out-of-plane orientation distribution starts out very broad, and then decreases during IBAD MgO growth. Other results included evidence that the in-plane orientation distribution narrows, the grain size increases, and the film roughens as film thickness increases during IBAD MgO growth. Homoepitaxy of MgO improves the biaxial texture of the IBAD layer, making X-ray measurements of IBAD films with an additional homoepitaxial layer not quantitatively representative of the IBAD layer. Systematic offsets between RHEED analysis and X-ray measurements of biaxial texture, coupled with evidence that biaxial texture improves with increasing film thickness, indicate that RHEED is a superior technique for probing surface biaxial texture.

Structural modifications of hafnium oxide films prepared by ion beam assisted deposition under high energy oxygen irradiation

2001 ◽  
Vol 146-147 ◽  
pp. 237-242 ◽  
Author(s):  
Shoji Miyake ◽  
Ippei Shimizu ◽  
Rafael R. Manory ◽  
Takanori Mori ◽  
Giora Kimmel
Keyword(s):  
Hafnium Oxide ◽  
Ion Beam ◽  
Oxide Films ◽  
High Energy ◽  
Structural Modifications ◽  
Ion Beam Assisted Deposition

Mechanical Properties of AlN Thin Films Prepared by Ion Beam Assisted Deposition

2000 ◽  
Vol 647 ◽  
Author(s):  
Shuichi Miyabe ◽  
Toshiyuki Okawa ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Beam Energy ◽  
Ion Beam ◽  
High Energy ◽  
Columnar Structure ◽  
Ion Beam Assisted Deposition ◽  
Film Hardness ◽  
Nitrogen Ion

AbstractAluminum nitride (AlN) thin films were prepared by ion-beam assisted deposition method, and the influence of the nitrogen ion beam energy on their microstructure and mechanical properties was studied by changing the ion beam energy from 0.1 to 1.5 keV. Films prepared with a low-energy ion beam show a columnar structure, while films prepared with a high-energy ion beam show a granular structure. The film hardness is found to decrease with increasing nitrogen ion beam energy. It is also found that the film hardness does not change drastically after annealing in nitrogen atmosphere at 500 °C, yielding the residual stress relaxation. It is proposed that the film hardness is dependent on the film microstructure, which can be controlled with the nitrogen ion beam energy, rather than the residual stress in the films.

Influence of the Substrate Temperature on the Texture of MgO Films Grown by Ion Beam Assisted Deposition

2005 ◽  
Vol 868 ◽  
Author(s):  
Liliana Stan ◽  
Paul N. Arendt ◽  
Raymond F. DePaula ◽  
Igor Usov ◽  
James R. Groves
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Orientation Distribution ◽  
Beam Current ◽  
Energetic Ions ◽  
Ion Beam Assisted Deposition ◽  
Acceptable Deviation ◽  
Substrate Temperatures ◽  
Deposition Conditions

AbstractThe variation in the substrate temperature during ion beam assisted deposition (IBAD), which employs the use of energetic ions to bombard a growing film, has been shown to influence the quality of crystalline texture in MgO films. Determining the acceptable deviation from the optimum ion to molecule ratio for different substrate temperatures establishes the optimum MgO deposition conditions. For each fixed deposition temperature, a set of samples was produced by varying the ion assist beam current from sample to sample while keeping the deposition rate constant. In this way, the ion to molecule ratio was modified and the range of achieving well textured films was determined. The investigation of the MgO texture dependence on the substrate temperature reveals that the best in-plane alignment is obtained at ˜ 25°C. At this temperature, MgO films with in-plane orientation distribution as low as 3.7° full width at half maximum (FWHM) have been attained. MgO films deposited at temperatures higher than 100°C have broad in-plane alignment. Although, the deposition at the lowest temperature (-150°C) did not improve the in-plane texture, the acceptable deviation from the optimum ion to molecule ratio for achieving biaxially textured films was the largest. As a trend, the acceptable ion to molecule deviation decreases with increasing substrate temperature. This is especially important for continuous IBAD MgO depositions where less restrictive conditions are desired.

Epitaxial Growth of Ni on Si by Ion Beam Assisted Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
K. S. Grabowski ◽  
R. A. Kant ◽  
S. B. Qadr
Keyword(s):  
Electron Beam ◽  
Epitaxial Growth ◽  
Crystallographic Texture ◽  
Room Temperature ◽  
Ion Beam ◽  
Sample Surface ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Assisted Deposition

ABSTRACTEpitaxial Ni films were grown on Si(111) substrates to a thickness of about 500 nm by ion beam assisted deposition at room temperature. The films were grown using 25-keV-Ni ions and electron-beam evaporation of Ni at a relative arrival ratio of one ion for every 100 Ni vapor atoms. The ion beam and evaporant flux were both incident at 45° to the sample surface. Standard θ-2θ X-ray diffraction scans revealed the extent of crystallographic texture, while Ni {220} pole figure measurements identified the azimuthal orientation of Ni in the plane of the film. Films grown without the ion beam consisted of nearly randomly oriented fine grains of Ni whereas with bombardment the Ni (111) plane was found parallel to the Si (111) plane. In all the epitaxial cases the Ni [110] direction was perpendicular to the axis of the ion beam, suggesting that the azimuthal orientation of the film was determined by channeling of the ion beam down {110} planar channels in the Ni film. Additional experiments with different ions, energies, and substrates revealed their influence on the degree of epitaxy obtained.

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