Ion Beam Processing of Carbon Nitride Thin Films

1999 ◽  
Vol 585 ◽  
Author(s):  
Richard L.C. Wu ◽  
William C. Lanter ◽  
John Wrbranek ◽  
Peter B. Kosel ◽  
Charles A. Dejoseph
Keyword(s):  
Gas Flow ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Substrate Surface ◽  
Gas Mixture ◽  
Rf Power ◽  
Ion Beam Sputtering ◽  
Graphite Target ◽  
Deposition Rates ◽  
Ion Energy

AbstractAmorphous carbon nitride films have been deposited by two different methods: (1) direct ion beam deposition from a gas mixture of CH4/N2; and (2) nitrogen ion beam sputtering of a graphite target. The chemical composition, deposition rate, chemical bond and optical properties of the as-deposited films were studied as a function of the process parameters. In the first technique, ions (CH3+, N2+, N+, NH4+, NH3+, NH2+, HCN+, CN+ and N2H2+) were directly impacted onto the substrate surface. The effects of RF power, CH4/N2 gas ratio, total gas flow, pressure, and ion energy on the film properties and deposition rates were studied. In the second technique, a flux of energetic nitrogen ions (N2+, N+), generated by N2 and N2/Ar plasmas, were used to directly sputter a graphite target. In this case, the effects of RF power, gas mixture (N2, N2/Ar), and ion energy on the film characteristics and deposition rates were determined. The properties of the films generated by the two alternative techniques were also compared.

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

Large Area Surface Treatment by Ion Beam Technology

1996 ◽  
Vol 438 ◽  
Author(s):  
R. L. C. Wu ◽  
W. Lanter
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Polycrystalline Diamond ◽  
Carbon Films ◽  
Ultra High Vacuum ◽  
Diamond Like Carbon ◽  
Chemical Compositions ◽  
Rf Power ◽  
Large Area ◽  
Ion Energy

AbstractAn ultra high vacuum ion beam system, consisting of a 20 cm diameter Rf excilted (13.56 MHz) ion gun and a four-axis substrate scanner, has been used to modify large surfaces (up to 1000 cm2) of various materials, including; infrared windows, silicon nitride, polycrystalline diamond, 304 and 316 stainless steels, 440C and M50 steels, aluminum alloys, and polycarbonates; by depositing different chemical compositions of diamond-like carbon films. The influences of ion energy, Rf power, gas composition (H2/CH4 , Ar/CH4 and O2/CH4/H2), on the diamond-like carbon characteristics has been studied. Particular attention was focused on adhesion, environmental effects, IR(3–12 μm) transmission, coefficient of friction, and wear factors under spacelike environments of diamond-like carbon films on various substrates. A quadrupole mass spectrometer was utilized to monitor the ion beam composition for quality control and process optimization.

scholarly journals Deposition of Dlc Via Intense Ion Beam Ablation

1993 ◽  
Vol 316 ◽  
Author(s):  
Gregory P. Johnston ◽  
Prabhat Tiwari ◽  
Donald J. Rej ◽  
Harold A. Davis ◽  
William J. Waganaar ◽  
...  
Keyword(s):  
Pulse Width ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Carbon Ions ◽  
Graphite Target ◽  
Deposition Rates ◽  
Micron Size ◽  
Electrical Resistivities ◽  
Electron Energy Loss

ABSTRACTDiamond-like carbon films were prepared by high intensity pulsed ion beam ablation of graphite targets. A 350 keV, 35 kA, 400 ns pulse width beam, consisting primarily of carbon ions and protons, was focused onto a graphite target at a fluence of 15-45 J/cm2. Films were deposited onto substrates positioned in an angular array from normal to the target to 90° off normal. Deposition rates up to 30 nm per pulse, corresponding to an instantaneous deposition rate greater than 1 mm/sec, have been observed. Electrical resistivities between 1 and 1000 ohm·cm were measured for these films. XRD scans showed that no crystalline structure developed in the films. SEM revealed that the bulk of the films contain material with feature sizes on the order of 100 nm, but micron size particles were deposited as well. Both Raman and electron energy loss spectroscopy indicated significant amounts of sp3 bonded carbon present in most of the films.

Nitrogen Effects on Optical and Electrical Properties of Amorphous Carbon

2010 ◽  
Vol 636-637 ◽  
pp. 423-429 ◽  
Author(s):  
M. Fathallah ◽  
N. Alassimi ◽  
N. Alzayed ◽  
R. Gharbi
Keyword(s):  
Electrical Properties ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Gas Mixture ◽  
Optical And Electrical Properties ◽  
Photoluminescence Spectra ◽  
Graphite Target ◽  
Triple Bonds ◽  
C And N ◽  
Amorphous Carbon Nitride

Optical and electrical properties amorphous carbon nitride (a-CN) has been investigated on films deposited by reactive R.F. sputtering source with a graphite target. The amorphous carbon nitride samples were prepared under a gas mixture of nitrogen (N2) and /or Argon (Ar).The optical transitions are governed by the  and * electronic state distributions, related to sp2- and sp1-hybridized C and N atoms. Specific lonepair electronic states arise from groups (CN) with sp1-hybridized C atoms, which may form C≡N triple bonds or —N=C=N— longer chains. Photoluminescence spectra show a maximum around 650 nm. Two conduction regimes at high and low temperature are found in a-CN samples. The corresponding activation energies decrease with the increase of target voltage.

Structural, Optical and Electrical Characteristics of Silicon Carbon Nitride

1999 ◽  
Vol 592 ◽  
Author(s):  
L. C. Chen ◽  
C. T. Wu ◽  
C.-Y Wen ◽  
J.-J. Wu ◽  
W. T. Liu ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Ion Beam ◽  
Interface Roughness ◽  
Electrical Characteristics ◽  
Ion Beam Sputtering ◽  
Electrical Measurements ◽  
Sputtering Deposition ◽  
Silicon Carbon ◽  
Beam Sputtering ◽  
Silicon Carbon Nitride

ABSTRACTDielectric layers of thin silicon carbon nitride (SiCxNy) films have been prepared by ion beam sputtering deposition (IBD). For submicron metal-insulator-Si (MIS) based device applications, a dielectric of low interface roughness, increased capacitance/area with lower leakage on decreasing scale is highly desirable. We address these aspects for the IBD SiCxNy films on p-type Si and present their structural, optical and electrical characteristics as a function of the deposition conditions. Ultraviolet-visible transmittance and spectroscopic ellipsometry were employed to study the optical properties of the SiCxNy films. For electrical measurements, Al gate electrodes were fabricated on SiCxNy films to form metal-nitride-silicon (MNS) diodes. Characteristic I-V and photoconductivity measurements of the MNS are presented.

Deposition of silicon carbon nitride films by ion beam sputtering

1999 ◽  
Vol 355-356 ◽  
pp. 417-422 ◽  
Author(s):  
J.-J Wu ◽  
C.-T Wu ◽  
Y.-C Liao ◽  
T.-R Lu ◽  
L.C Chen ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Silicon Carbon ◽  
Beam Sputtering ◽  
Silicon Carbon Nitride

Carbon nitride films synthesized by dual ion beam sputtering

1997 ◽  
Vol 122 (3) ◽  
pp. 534-537 ◽  
Author(s):  
P. Prieto ◽  
C. Quirós ◽  
E. Elizalde ◽  
A. Fernandez ◽  
J.M. Martin ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering
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