The Effect of Low-Energy Nitrogen Ions on the Growth Modes of Nitrides on Polymers used in the Microelectronics Industry

1999 ◽  
Vol 585 ◽  
Author(s):  
P. Abramowitz ◽  
M. Kiene ◽  
P. Ho
Keyword(s):  
Titanium Nitride ◽  
Deposition Process ◽  
Growth Conditions ◽  
Nitride Layer ◽  
Thin Layers ◽  
Low Energy ◽  
Tantalum Nitride ◽  
Grain Structure ◽  
Nitrogen Ions ◽  
Low Energy Ions

AbstractUltra-thin titanium and tantalum nitride layers grown on three different dielectrics were studied to examine how low-energy ions change the chemical composition at and near their interface. Comparisons were made by growing titanium and tantalum nitride under similar conditions both with (ion-assisted) and without (reactive) nitrogen ions. Although the chemical reactions between the nitrides and the three dielectrics under both growth conditions depend on the type of dielectric used, a few general observations were seen. In comparison with the reactively grown samples, all of the ion-assisted growths show a significant increase in the amount of nitride in the nitride layer at and near the nitride/dielectric interface. Moreover, the amount of chemical binding between the titanium nitride and dielectric is increased when low-energy ions are used. Angle resolved x-ray photoemission determined that the enhancement in the deposition process from low-energy ions occurs without inducing significant intermixing between the nitride layer and dielectric. Although thicker layers of titanium nitride show a difference in the grain structure from ion deposition1, the ultra-thin layers grown in this work do not have any dependence with ion-assisted growth for the samples measured.

scholarly journals Structure Of TiN/Hydroxyapatite Multilayers Deposited On Surface Of NiTi Shape Memory Alloy

2015 ◽  
Vol 60 (3) ◽  
pp. 1777-1782 ◽  
Author(s):  
K. Dudek ◽  
T. Goryczka ◽  
T. Wierzchoń ◽  
J. Lelątko
Keyword(s):  
Glow Discharge ◽  
Titanium Nitride ◽  
Shape Memory ◽  
Niti Alloy ◽  
Parent Phase ◽  
Deposition Process ◽  
Nitride Layer ◽  
Niti Shape Memory Alloy ◽  
X Ray Diffraction ◽  
Protective Layers

Abstract In order to improve a corrosion resistance and biocompatibility of NiTi shape memory alloys, the surface of the NiTi alloy was covered by protective layers. The paper presents results of the layers composed of titanium nitride and hydroxyapatite (HAp). The TiN layers were deposited using the glow discharge technique and then the bioactive hydroxyapatite layer was formed from simulated body fluids solution. The results of the structure studies and microscopic observations confirmed that on the surface of the NiTi alloy a thin titanium nitride layer 35-50 nm thick (depending on the glow discharge technique parameters) was obtained. The structure of the deposited layers was studied by means of the X-ray diffraction technique. Also, mechanical parameters of obtained layers were characterized using nanoindentation. On the top of the titanium nitride, a layer consisted of hydroxyapatite and NaCl was formed. Applied parameters of deposition process did not lead to decomposition of the NiTi parent phase (B2) to the equilibrium ones.

Structural Characterization of Titanium Nitride Coatings on AISI M2 Steel

2007 ◽  
Vol 554 ◽  
pp. 219-224 ◽  
Author(s):  
G. Deniz ◽  
Şaduman Şen ◽  
Uğur Şen
Keyword(s):  
Titanium Nitride ◽  
Structural Characterization ◽  
Treatment Time ◽  
Deposition Process ◽  
Xrd Analysis ◽  
Nitride Layer ◽  
Gas Nitriding ◽  
Process Gas ◽  
Nitride Layers

In this work, some surface properties of AISI M2 steel were improved by a thermoreactive deposition process. Gas nitriding was realized on AISI M2 steel at 550°C for 2 h in an ammoniac atmosphere and then, titanizing treatment performed on pre-nitrided steel in the powder mixture consisting of ferro-titanium, ammonium chloride and alumina at 1000°C for 1-4 h. Structural characterization of titanium nitride layer formed on the surface of AISI M2 steel was carried out by using optical microscopy, scanning electron microscopy, electron microprobe and Xray diffraction (XRD) analysis. The hardness measurements of titanium nitride layer were conducted under 10 g loads by using Vickers microhardness indenter. Structural analysis studies showed that titanium nitride layers formed on the AISI M2 steel samples were smooth, compact and homogeneous. XRD analysis show that the coating layer formed on the steel samples includes TiN, Fe6Mo7N2, C0.7N0.3Ti, C0.3N0.7Ti and V2N phases. The hardness of titanium nitride layers formed on the steel samples is between 2040±186 and 2418±291 HV0.01. The thickness of titanium nitride layer formed on the steel samples ranged from 3.86±0.43 9m to 6.13±0.47 9m, depending on treatment time.

Effect Of Phosphorus On Ge/Si(001) Island Formation

2002 ◽  
Vol 737 ◽  
Author(s):  
Theodore I. Kamins ◽  
Gilberto Medeiros-Ribeiro ◽  
Douglas A. A. Ohlberg ◽  
R. Stanley Williams
Keyword(s):  
Deposition Rate ◽  
Strain Energy ◽  
Competitive Adsorption ◽  
Lattice Mismatch ◽  
Three Dimensional ◽  
Deposition Process ◽  
Thin Layers ◽  
Island Size ◽  
Partial Pressures ◽  
Intermediate Size

ABSTRACTWhen Ge is deposited epitaxially on Si, the strain energy from the lattice mismatch causes the Ge in layers thicker than about four monolayers to form distinctive, three-dimensional islands. The shape of the islands is determined by the energies of the surface facets, facet edges, and interfaces. When phosphorus is added during the deposition, the surface energies change, modifying the island shapes and sizes, as well as the deposition process. When phosphine is introduced to the germane/hydrogen ambient during Ge deposition, the deposition rate decreases because of competitive adsorption. The steady-state deposition rate is not reached for thin layers. The deposited, doped layers contain three different island shapes, as do undoped layers; however, the island size for each shape is smaller for the doped layers than for the corresponding undoped layers. The intermediate-size islands are the most significant; the intermediate-size doped islands are of the same family as the undoped, multifaceted “dome” structures, but are considerably smaller. The largest doped islands appear to be related to the defective “superdomes” discussed for undoped islands. The distribution between the different island shapes depends on the phosphine partial pressure. At higher partial pressures, the smaller structures are absent. Phosphorus appears to act as a mild surfactant, suppressing small islands.

Ion-Assisted Surface Processing of Electronic Materials

MRS Bulletin ◽  
1992 ◽  
Vol 17 (6) ◽  
pp. 52-57 ◽  
Author(s):  
S.T. Picraux ◽  
E. Chason ◽  
T.M. Mayer
Keyword(s):  
Plasma Etching ◽  
Electronic Materials ◽  
Low Energy ◽  
Surface Processing ◽  
Wave Guides ◽  
Side Walls ◽  
Wet Chemical ◽  
Low Energy Ions ◽  
Metal Layers ◽  
Defect Densities

Why are low-energy ions relevant to the surface processing of electronic materials? The answer lies in the overriding trend of miniaturization in microelectronics. The achievement of these feats in ultrasmall architecture has required surface processing capabilities that allow layer addition and removal with incredible precision. The resulting benefits of greater capacity and speed at a plummeting cost per function are near legendary.The ability of low-energy ions to enhance the precision of surface etching, cleaning, and deposition/growth processes (Figure 1) provides one basis for the interest in ion-assisted processes. Low-energy ions are used, for example, to enhance the sharpness of side walls in plasma etching and to improve step coverage by metal layers in sputter deposition. Emerging optoelectronic applications such as forming ridges for wave-guides and ultrasmooth vertical surfaces for lasers further extend piesent requirements, and low-energy ions again provide one tool to help in this area of ultraprecise materials control. Trends associated with the decreased feature size include the movement from wet chemical processing to dry processing, the continuing need for reductions in defect densities, and the drive toward reduced temperatures and times in process steps.How do the above trends focus interest on studies of low-energy ion-assisted processes? In current applications, these trends are driving the need for increased atomic-level understanding of the ion-enhancement mechanisms, for example, in reactive ion etching to minimize defect production and enhance surface chemical reactions.

scholarly journals Characterization of nitrogen species incorporated into graphite using low energy nitrogen ion sputtering

2016 ◽  
Vol 18 (1) ◽  
pp. 458-465 ◽  
Author(s):  
Hisao Kiuchi ◽  
Takahiro Kondo ◽  
Masataka Sakurai ◽  
Donghui Guo ◽  
Junji Nakamura ◽  
...  
Keyword(s):  
Low Energy ◽  
Nitrogen Species ◽  
Ion Sputtering ◽  
Zigzag Edge ◽  
Nitrogen Doped ◽  
Doping Mechanism ◽  
Nitrogen Ions ◽  
Nitrogen Ion

The well-controlled nitrogen doped graphite with graphitic nitrogen located in the zigzag edge and/or vacancy sites can be realized using the low energy nitrogen sputtering. The doping mechanism of nitrogen ions is also discussed.

Chemical Vapor Deposition of Sr1−xBaxNb2O6 Thin Films Using Metal Alkoxide Precursors

2000 ◽  
Vol 15 (8) ◽  
pp. 1702-1708
Author(s):  
Ruichao Zhang ◽  
Ren Xu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Thin Layers ◽  
Metal Alkoxide ◽  
Stoichiometry Control ◽  
Alkoxide Precursors

A novel two-step metalorganic chemical vapor deposition process was used in this study to prepare Sr1−xBaxNb2O6 (SBN) thin films. Two thin layers of single-phase SrNb2O6 and BaNb2O6 were deposited alternately on a silicon substrate, and the solid solution of SBN was obtained by high-temperature annealing. The stoichiometry control of the SrNb2O6 and the BaNb2O6 thin films was achieved through deposition process control, according to the evaporation characteristics of double metal alkoxide. The evaporation behavior of double metal alkoxide precursors SrNb2(1-OC4H9)12 and BaNb2(1-OC4H9)12 was studied, and the results were compared with the evaporation of single alkoxide Nb(1-OC4H9)5.

Modelling Interaction Cross Sections for Intermediate and Low Energy Ions

2002 ◽  
Vol 99 (1) ◽  
pp. 49-51 ◽  
Author(s):  
L. H. Toburen ◽  
J. L. Shinpaugh ◽  
E. L. B. Justiniano
Keyword(s):  
Cross Sections ◽  
Low Energy ◽  
Low Energy Ions ◽  
Interaction Cross Sections
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