scholarly journals Tantalum nitride nanotube photoanodes: Establishing a beneficial back-contact by lift-off and transfer to titanium nitride layer

2016 ◽  
Vol 72 ◽  
pp. 27-31 ◽  
Author(s):  
Lei Wang ◽  
Anca Mazare ◽  
Imgon Hwang ◽  
Patrik Schmuki
Keyword(s):  
Titanium Nitride ◽  
Nitride Layer ◽  
Tantalum Nitride ◽  
Back Contact ◽  
Lift Off

The Effect of Low-Energy Nitrogen Ions on the Growth Modes of Nitrides on Polymers used in the Microelectronics Industry

1999 ◽  
Vol 585 ◽  
Author(s):  
P. Abramowitz ◽  
M. Kiene ◽  
P. Ho
Keyword(s):  
Titanium Nitride ◽  
Deposition Process ◽  
Growth Conditions ◽  
Nitride Layer ◽  
Thin Layers ◽  
Low Energy ◽  
Tantalum Nitride ◽  
Grain Structure ◽  
Nitrogen Ions ◽  
Low Energy Ions

AbstractUltra-thin titanium and tantalum nitride layers grown on three different dielectrics were studied to examine how low-energy ions change the chemical composition at and near their interface. Comparisons were made by growing titanium and tantalum nitride under similar conditions both with (ion-assisted) and without (reactive) nitrogen ions. Although the chemical reactions between the nitrides and the three dielectrics under both growth conditions depend on the type of dielectric used, a few general observations were seen. In comparison with the reactively grown samples, all of the ion-assisted growths show a significant increase in the amount of nitride in the nitride layer at and near the nitride/dielectric interface. Moreover, the amount of chemical binding between the titanium nitride and dielectric is increased when low-energy ions are used. Angle resolved x-ray photoemission determined that the enhancement in the deposition process from low-energy ions occurs without inducing significant intermixing between the nitride layer and dielectric. Although thicker layers of titanium nitride show a difference in the grain structure from ion deposition1, the ultra-thin layers grown in this work do not have any dependence with ion-assisted growth for the samples measured.

Through-Epitaxial-Via Back-Contact Multi-Junction Solar Cells Fabricated Using Epitaxial Lift-Off

2017 ◽  
Author(s):  
Rekha Reddy ◽  
Marilyn L. Nowakowski ◽  
David Rowell ◽  
Christopher L. Stender ◽  
Christopher Youtsey
Keyword(s):  
Solar Cells ◽  
Back Contact ◽  
Lift Off

Alumina-Based Functional Materials Hardened with Al or Ti and Al-nitride or Ti-nitride Dispersions

2010 ◽  
Vol 1276 ◽  
Author(s):  
José G. Miranda-Hernández ◽  
Elizabeth Refugio-Garcia ◽  
Elizabeth Garfias-García ◽  
Enrique Rocha-Rangel
Keyword(s):  
Aluminum Nitride ◽  
Titanium Nitride ◽  
Functional Materials ◽  
High Energy ◽  
Nitride Layer ◽  
Layer Growth ◽  
Density Level ◽  
Functional Material ◽  
Energy Ball ◽  
Titanium Powders

AbstractThe synthesis of Al2O3-based functional materials having 10 vol. % of fine aluminum or titanium and aluminum-disperse or titanium-dispersed nitride hardened-particles has been explored. Two experimental steps have been set for the synthesis; specifically, sintering of Al2O3-aluminum or Al2O3-titanium powders which were thoroughly mixed under high energy ball-milling, pressureless-sintered at 1400°C during 1 h in argon atmosphere and then for the second step it was induced formation of aluminum nitride or titanium nitride at 500°C during different times (24, 72 and 120 h) by a nitriding process via immersion in ammoniac salts. SEM analyses of the microstructures obtained in nitride bodies were performed in order to know the effect of the ammoniac salts used as nitrating on the microstructure of aluminum or titanium for each studied functional material. It was observed that an aluminum nitride or titanium nitride layer growth from the surface into the bulk and reaches different depth as the nitriding time of the functional material was increased. The use of aluminum or titanium significantly enhanced density level and hardness of the functional materials.

Sputter-Deposited Bcc Tantalum on Steel with the Interfacial Tantalum Nitride Layer

2001 ◽  
Vol 697 ◽  
Author(s):  
Anamika Patel ◽  
Leszek Gladczuk ◽  
Charanjeet Singh Paur ◽  
Marek Sosnowski
Keyword(s):  
Corrosive Wear ◽  
Beta Phase ◽  
Nitride Layer ◽  
Alpha Phase ◽  
Tantalum Nitride ◽  
Nuclear Reaction Analysis ◽  
Sputtered Films ◽  
Bcc Structure ◽  
Two Phases ◽  
Sputter Deposited

AbstractTantalum has mainly two phases: alpha phase (bcc structure) and beta phase (tetragonal structure). The meta-stable beta phase is usually obtained in sputtered films. Alpha phase is preferred over the beta for some applications as beta phase is very brittle. One of such application is to protect steel from the erosive and the corrosive wear. It was found that with the intermediate layer of tantalum nitride the preferred alpha phase was grown on steel by DC magnetron sputtering technique. Electrical and structural properties of these films were studied by four-point probe measurement and x-ray diffraction (XRD). Stoichiometry of the interfacial tantalum nitride layer was investigated by nuclear reaction analysis (NRA). Influence of the interfacial film thickness and the ratio of argon and nitrogen gas during reactive deposition of tantalum nitride on the tantalum phase were investigated. This work also reports on the dependence of tantalum phase on the substrate temperature (100-400°C) during sputtering in Ar and Kr gases.

Deposition of Copper Thin Films on Titanium Nitride Layer Prepared by Flow Modulation CVD Technology

2004 ◽  
Vol 449-452 ◽  
pp. 457-460
Author(s):  
Nam Ihn Cho ◽  
Min Chul Kim ◽  
Kyung Hwa Rim ◽  
Ho Jung Chang ◽  
Keeyoung Jun ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Diffusion Barrier ◽  
High Vacuum ◽  
Reduction Process ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Nitride Layer ◽  
Layer Growth ◽  
Flow Modulation

Copper (Cu) thin films have been deposited onto titanium nitride (TiN) layer which was previously prepared by flow modulation chemical vapor deposition (FMCVD technology. The diffusion barrier properties of the TiN layer to Cu have been studied depending upon the post-annealing and the sample preparation conditions of the TiN layer. The Cu deposition has performed by RF magnetron sputtering with 5N target in the high vacuum ambient. The FMCVD process has carried out in a single CVD chamber by switching TiCl4flow to the argon flow cyclically, which creates sequential deposition of TiN layer and chlorine reduction process. The higher flow modulation cycle and Ar purge time during the TiN layer growth have been observed to provide the better diffusion barrier property in Auger depth profile and X-ray diffraction analysis.

Microstructure Coating Influence for Optimized Diamond Deposition

2012 ◽  
Vol 706-709 ◽  
pp. 2898-2903 ◽  
Author(s):  
Angéline Poulon-Quintin ◽  
Cyril Faure ◽  
Lionel Teulé-Gay ◽  
Jean Pierre Manaud
Keyword(s):  
Diffusion Barrier ◽  
Multilayer Coating ◽  
Cutting Tools ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Buffer Layers ◽  
Tantalum Nitride ◽  
Zirconium Nitride ◽  
Diamond Deposition ◽  
Multilayer Systems

Diamond films grown by Chemical Vapor Deposition (CVD) are widely used as surface overlay coating onto WC-Co cutting tools to develop their performances. To improve the diamond adhesion with the substrate, many pre-treatment methods have been applied such as giving a suitable diffusion barrier layer on the substrates. Single zirconium and tantalum nitride layers have been sputtered onto WC-Co substrates as diffusion barriers and buffer layers under specific reactive sputtering conditions. Microstructure of the tantalum nitride layer has been controlled using process parameters in order to understand mechanisms occurring during Co diffusion in correlation with microstructure. Moreover, a multilayer coating composed of TaN and ZrN thin film sequences as diffusion barrier is also evaluated. To improve the nuclei density of diamond during CVD processing, a thin Mo extra layer has been added (500 nm) whatever the diffusion barrier used. In this study, bilayer and multilayer systems have been tested to optimize nanocrystalline CVD diamond deposition grown with negative biased substrates. For all systems, after diamond deposition, a massive carburization of molybdenum and tantalum nitride is observable whereas zirconium nitride is not. A TEM study is done to improve understanding of phenomena occurring at the interfaces during the process. The key role played by each layer microstructure is discussed.

scholarly journals Surface Coating on Aluminum Flakes with Titanium Nitride Layer by Barrel-Sputtering Techniques

2008 ◽  
Vol 49 (7) ◽  
pp. 1638-1643 ◽  
Author(s):  
Satoshi Akamaru ◽  
Yuji Honda ◽  
Akira Taguchi ◽  
Takayuki Abe
Keyword(s):  
Titanium Nitride ◽  
Surface Coating ◽  
Nitride Layer
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