Patterned ZnS Thin-Film Growth using KrCl Excimer Lamp on the Zn Nuclei

1999 ◽  
Vol 585 ◽  
Author(s):  
M. Toda ◽  
H. Lizuka ◽  
M. Murahara

AbstractPatterned Zn nuclei were formed by exposure with a single shot of an ArF excimer laser through a patterned photo mask onto a Si substrate which adsorbed DMZ (dimethylezinc). A ZnS thin film was then grown only onto the patterned Zn nuclei by KrCl excimer lamp irradiation of the substrate which was sealed in the chamber along with DMZ and H2S.

1989 ◽  
Vol 158 ◽  
Author(s):  
R. Izquierdo ◽  
C. Lavoie ◽  
M. Meunier

ABSTRACTWe have investigated the deposition of titanium lines from TiCl4 induced by KrF excimer laser (248 nm). Substrates are primarily LiNbO3, for the possible formation of Ti:LiNbO3 optical waveguides, as well as silicon and glass. Titanium lines contain [Cl] < 2 at% and are typically 200 to 1000 Angstroms thick with a width ranging from 3 to 20 μm. Results suggest that the process is controlled by photochemistry of TiCl4 but it is difficult at this point to assert which of the gas or adsorbed layer is the primary source of thin film growth.


Shinku ◽  
1993 ◽  
Vol 36 (3) ◽  
pp. 219-222
Author(s):  
Satoru KANEKO ◽  
Seishiro OHYA ◽  
Ken KOBAYASHI ◽  
Shiro KARASAWA

2021 ◽  
Vol 118 (10) ◽  
pp. 102402
Author(s):  
Hiroaki Shishido ◽  
Akira Okumura ◽  
Tatsuya Saimyoji ◽  
Shota Nakamura ◽  
Shigeo Ohara ◽  
...  

2021 ◽  
Author(s):  
Kristina Ashurbekova ◽  
Karina Ashurbekova ◽  
Iva Saric ◽  
Evgeny Modin ◽  
Mladen Petravic ◽  
...  

We developed a thin film growth with a radical-initiated cross-linking of vinyl groups in a layer-by-layer manner via molecular layer deposition (MLD). The cross-linked film exhibited improved properties like 12% higher density and enhanced stability compared to the non-cross-linked film.


Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...


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