Correlation of Ingap(001) Surface Structure During Growth and CuptB-Type Bulk Ordering

1999 ◽  
Vol 583 ◽  
Author(s):  
M. Zorn ◽  
P. Kurpas ◽  
A. Bhattacharya ◽  
M. Weyers ◽  
J.-T. Zettler ◽  
...  
Keyword(s):  
Surface Structure ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Surface Conditions ◽  
Reflectance Anisotropy ◽  
Metal Organic ◽  
Organic Vapour ◽  
Lattice Matched

AbstractThe mechanism causing the CuPtB-type ordering of InGaP grown lattice matched to GaAs was investigated by in-situ reflectance anisotropy spectroscopy (RAS/RDS). Experiments were performed during InGaP growth in metal-organic vapour phase epitaxy (MOVPE). From the experiments it can be concluded that bulk ordering only occurs when InGaP growth is performed under phosphorus-rich (2×1)-like surface conditions. Bulk ordering completely disappears under growth conditions which cause a less-phosphorus-rich (2×4)-like surface dimer configuration.

scholarly journals Characterisation of III?V Multilayers Grown by Low-pressure Metal Organic Vapour-phase Epitaxy

1993 ◽  
Vol 46 (3) ◽  
pp. 435
Author(s):  
C Jagadish ◽  
A Clark ◽  
G Li ◽  
CA Larson ◽  
N Hauser ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Growth Temperature ◽  
Deep Level ◽  
Growth Parameters ◽  
Low Pressure ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Undoped and doped layers of gallium arsenide and aluminium gallium arsenide have been grown on gallium arsenide by low-pressure metal organic vapour-phase epitaxy (MOVPE). Delta doping and growth on silicon substrates have also been attempted. Of particular interest in the present study has been the influence of growth parameters, such as growth temperature, group III mole fraction and dopant flow, on the electrical and physical properties of gallium arsenide layers. An increase in growth temperature leads to increased doping efficiency in the case of silicon, whereas the opposite is true in the case of zinc. Deep level transient spectroscopy (DTLS) studies on undoped GaAs layers showed two levels, the expected EL2 level and a carbon-related level. The determination of optimum growth conditions has allowed good quality GaAs and AlGaAs epitaxial layers to be produced for a range of applications.`

SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations

2005 ◽  
Vol 892 ◽  
Author(s):  
Rachel Oliver ◽  
Menno J. Kappers ◽  
Joy Sumner ◽  
Ranjan Datta ◽  
Colin J. Humphreys
Keyword(s):  
Atomic Force Microscopy ◽  
Vapour Phase ◽  
Threading Dislocation ◽  
Vapour Phase Epitaxy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dislocation Densities ◽  
Metal Organic ◽  
Organic Vapour

AbstractFast-turnaround, accurate methods for the assessment of threading dislocation densities in GaN are an essential research tool. Here, we present an in-situ surface treatment for use in MOVPE (metal-organic vapour phase epitaxy) growth, in which GaN is exposed to a SiH4 flux at 860 °C in the presence of NH3. Subsequent characterisation by atomic force microscopy shows that the treatment is effective in increasing edge and mixed/screw dislocation pit sizes on both n- and p-type material, and on partially coalesced GaN layers.

In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy

2000 ◽  
Vol 221 (1-4) ◽  
pp. 149-155 ◽  
Author(s):  
Markus Pristovsek ◽  
Bing Han ◽  
Jörg-Thomas Zettler ◽  
Wolfgang Richter
Keyword(s):  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
In Situ Investigation ◽  
Metal Organic ◽  
Organic Vapour

The metal organic vapour phase epitaxy of ZnTe: II. Analysis of growth conditions

1995 ◽  
Vol 31 (1-2) ◽  
pp. 45-117 ◽  
Author(s):  
W.S. Kuhn ◽  
B. Qu'Hen ◽  
O. Gorochov ◽  
R. Triboulet ◽  
W. Gebhardt
Keyword(s):  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Plasma assisted nitrogen doping of ZnSe grown by MOVPE

1994 ◽  
Vol 340 ◽  
Author(s):  
T. Cloitre ◽  
O. Briot ◽  
N. Briot ◽  
B. Gil ◽  
R.L. Aulombard
Keyword(s):  
Nitrogen Doping ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Active Species ◽  
Vapour Phase Epitaxy ◽  
Carrier Gas ◽  
Metal Organic ◽  
Organic Vapour ◽  
Carrier Gases ◽  
P Type

ABSTRACTWe designed a plasma cell for nitrogen doping of ZnSe, using a metal organic vapour phase epitaxy (MOVPE) horizontal reactor. With the following growth conditions: Tg=300°C, P=1 Torr and a molar VI/II ratio of 5, successful p-type doping was obtained, as assessed by photoluminescence experiments, but with a free carrier concentration still too low to be detected by transport measurements. The passivation of nitrogen active species by hydrogen is discussed. The possible interaction with the carrier gas has been studied through the use of H2, N2 and He as carrier gases. We demonstrate that the use of helium as carrier gas leads to sensible improvement of the photoluminescence features related to nitrogen acceptor. On the other hand, the use of N2 as carrier gas leads to poor homogeneity of the layers with few effects on the doping level.

scholarly journals The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE

2020 ◽  
Vol 50 (2) ◽  
Author(s):  
Adriana Łozińska ◽  
Mikołaj Badura ◽  
Katarzyna Bielak ◽  
Beata Ściana ◽  
Marek Tłaczała
Keyword(s):  
Quantum Well ◽  
Vapour Phase ◽  
Semiconductor Heterostructures ◽  
Photoluminescence Spectra ◽  
Vapour Phase Epitaxy ◽  
Line Energy ◽  
Metal Organic ◽  
Organic Vapour ◽  
Non Destructive ◽  
Lattice Matched

In the presented work, the influence of the quantum well and barrier thicknesses on optical characteristics of InGaAs/AlInAs superlattices was reported. Six different structures of In0.53Ga0.47As/Al0.48In0.52As superlattices lattice-matched to InP were grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Optical properties of the obtained structures were examined by means of photoluminescence spectroscopy. This technique allows quick, simple and non-destructive measurements of radiative optical transitions in different semiconductor heterostructures. The analysis of recorded photoluminescence spectra revealed the influence of the quantum well and barrier thicknesses on the emission line energy.

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