An in situ gas chromatographic and mass spectrometric investigation of the role of substrate temperature in the production of zinc selenide from dimethylzinc and hydrogen selenide via metal–organic vapour phase epitaxy (MOVPE)

1986 ◽  
pp. 68-69 ◽  
Author(s):  
J. Iwan Davies ◽  
Guanghan Fan ◽  
Maxwell J. Parrott ◽  
John O. Williams
Keyword(s):  
Zinc Selenide ◽  
Vapour Phase ◽  
Mass Spectrometric ◽  
Spectrometric Investigation ◽  
Mass Spectrometric Investigation ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations

2005 ◽  
Vol 892 ◽  
Author(s):  
Rachel Oliver ◽  
Menno J. Kappers ◽  
Joy Sumner ◽  
Ranjan Datta ◽  
Colin J. Humphreys
Keyword(s):  
Atomic Force Microscopy ◽  
Vapour Phase ◽  
Threading Dislocation ◽  
Vapour Phase Epitaxy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dislocation Densities ◽  
Metal Organic ◽  
Organic Vapour

AbstractFast-turnaround, accurate methods for the assessment of threading dislocation densities in GaN are an essential research tool. Here, we present an in-situ surface treatment for use in MOVPE (metal-organic vapour phase epitaxy) growth, in which GaN is exposed to a SiH4 flux at 860 °C in the presence of NH3. Subsequent characterisation by atomic force microscopy shows that the treatment is effective in increasing edge and mixed/screw dislocation pit sizes on both n- and p-type material, and on partially coalesced GaN layers.

In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy

2000 ◽  
Vol 221 (1-4) ◽  
pp. 149-155 ◽  
Author(s):  
Markus Pristovsek ◽  
Bing Han ◽  
Jörg-Thomas Zettler ◽  
Wolfgang Richter
Keyword(s):  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
In Situ Investigation ◽  
Metal Organic ◽  
Organic Vapour

Correlation of Ingap(001) Surface Structure During Growth and CuptB-Type Bulk Ordering

1999 ◽  
Vol 583 ◽  
Author(s):  
M. Zorn ◽  
P. Kurpas ◽  
A. Bhattacharya ◽  
M. Weyers ◽  
J.-T. Zettler ◽  
...  
Keyword(s):  
Surface Structure ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Surface Conditions ◽  
Reflectance Anisotropy ◽  
Metal Organic ◽  
Organic Vapour ◽  
Lattice Matched

AbstractThe mechanism causing the CuPtB-type ordering of InGaP grown lattice matched to GaAs was investigated by in-situ reflectance anisotropy spectroscopy (RAS/RDS). Experiments were performed during InGaP growth in metal-organic vapour phase epitaxy (MOVPE). From the experiments it can be concluded that bulk ordering only occurs when InGaP growth is performed under phosphorus-rich (2×1)-like surface conditions. Bulk ordering completely disappears under growth conditions which cause a less-phosphorus-rich (2×4)-like surface dimer configuration.

In situ growth of nano-structures by metal-organic vapour phase epitaxy

1997 ◽  
Vol 170 (1-4) ◽  
pp. 39-46 ◽  
Author(s):  
Werner Seifert ◽  
Niclas Carlsson ◽  
Jonas Johansson ◽  
Mats-Erik Pistol ◽  
Lars Samuelson
Keyword(s):  
Vapour Phase ◽  
In Situ Growth ◽  
Vapour Phase Epitaxy ◽  
Nano Structures ◽  
Metal Organic ◽  
Organic Vapour

The role of InGaN interlayers on the microstructure of InN epilayers grown via metal organic vapour phase epitaxy

2010 ◽  
Vol 207 (5) ◽  
pp. 1070-1073 ◽  
Author(s):  
Abdul Kadir ◽  
Tapas Ganguli ◽  
M. R. Gokhale ◽  
A. P. Shah ◽  
Arnab Bhattacharya
Keyword(s):  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour
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