Controlled Phase Formation by Using a Diffusion Barrier - The Fe-Si REACTION

1999 ◽  
Vol 580 ◽  
Author(s):  
C.C. Theron ◽  
A. Falepin ◽  
S. Degroote ◽  
J. Dekoster ◽  
A. Vantomme ◽  
...  
Keyword(s):  
Phase Formation ◽  
Diffusion Barrier ◽  
Solid Phase ◽  
Direct Reaction ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Silicide Formation ◽  
Reactive Deposition ◽  
Annealing Temperatures ◽  
Direct Formation

AbstractBy analogy to reactive deposition epitaxy and titanium interlayer mediated epitaxy experiments, an attempt has been made to constrain the supply of reactants to the reaction interface in the solid phase reaction between Fe and Si. The goal being to change the normal phase formation sequence by using a suitable diffusion barrier, so that β-FeSi2 forms directly. Both Fe-V and Fe-Zr diffusion barriers were used to constrain the supply of the two reactants during Fe-silicide formation. Measurements with these barriers, show first phase formation of β-FeSi2, but direct formation of 3-FeSi2 as first phase has not been observed. In the case of the Fe-V diffusion barrier it was shown that the use of the diffusion barrier resulted in smoother layers of β-FeSi2 than could be formed by direct reaction of Fe on Si. In the case of the Fe-Zr barrier it is found that the barrier fails structurally at high temperatures. While it does prohibit Fe diffusion at low annealing temperatures, significant Si diffusion occurs prior to ε-FeSi formation.

PREPARATION OF ADHERENT MnSix FILMS

2002 ◽  
Vol 16 (07) ◽  
pp. 205-215 ◽  
Author(s):  
Q. R. HOU ◽  
Z. M. WANG ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electron Beam ◽  
Substrate Temperature ◽  
Thermal Evaporation ◽  
Solid Phase ◽  
Electron Beam Evaporation ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Reactive Deposition ◽  
Glass Substrates ◽  
Manganese Silicide

The adhesion of manganese silicide ( MnSi x) films on silicon and glass substrates is studied by using the micro-scratch method. The films were prepared by electron beam evaporation and thermal evaporation. To improve adhesion of the films, several techniques including ion bombardment, increasing substrate temperature, and insertion of a silicon intermediate layer were used. Finally, adherent MnSi x(x~1.7) films were prepared through solid phase reaction as well as reactive deposition. The hardness and modulus of the MnSi x(x~1.7) film were measured by a nano-indenter and the values are 8.8±1.0 GPa and 141±15 GPa, respectively.

Titanium Germanosilicide Phase Formation During The Ti-Si1-xGex Solid Phase Reactions

1995 ◽  
Vol 402 ◽  
Author(s):  
D. B. Aldrich ◽  
Y. L. Chen ◽  
D. E. Sayers ◽  
R. J. Nemanich
Keyword(s):  
Phase Formation ◽  
Alloy Composition ◽  
Composition Range ◽  
Reaction Path ◽  
Solid Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Initial Formation ◽  
Intermediate Composition ◽  
Solid Phase Reactions

AbstractThe effect of Si1−xGex alloy composition on the titanium germanosilicide phase formation sequence during the Ti-Si1−xGex solid phase reaction was examined. For the Ti-Si reaction the initial formation of C49 TiSi2 is followed, at higher temperatures, by the formation of C54 TiSi2. For the Ti-Ge reaction the initial formation of Ti6Ge5 is followed, at higher temperatures, by the formation of C54 TiGe2. It was determined that the Ti-Si1−xGex reaction follows three different reaction paths depending on the composition of the initial Si1−xGex alloy. For Si rich Si1−xGex alloys the Ti-Si1−xGex reaction follows a “Ti-Si like” reaction path (Ti+M ↠ C49 TiM2 ↠ C54 TiM2, where M = Si1−xGex). For Ge rich Si1−xGex alloys the reaction follows a “Ti-Ge like” reaction path (Ti+M ↠ Ti6M5 ↠ C54 TiM2). Both Ti6M5 and C49 TiM2 form during the reaction of titanium with Si1−xGex alloys in an intermediate composition range. Properties of the final C54 phase were observed to be strongly dependent on the phase formation sequence. Smooth continuous C54 titanium germanosilicide forms during the “Ti-Si like” reaction and discontinuous islanded C54 titanium germanosilicide forms during the “Ti-Ge like” reaction. An optimum Si1−xGex alloy composition range of 0.00 ≤ x ≤ 0.36 was determined for the formation of continuous- low-resistivity- C54 titanium germanosilicide films from the solid phase reaction of Ti and Si1−xGex alloy.

Effect of composition on phase formation and morphology in Ti–Si1−xGex solid phase reactions

1995 ◽  
Vol 10 (11) ◽  
pp. 2849-2863 ◽  
Author(s):  
D.B. Aldrich ◽  
Y.L. Chen ◽  
D.E. Sayers ◽  
R.J. Nemanich ◽  
S.P. Ashburn ◽  
...  
Keyword(s):  
Phase Formation ◽  
Alloy Composition ◽  
Composition Range ◽  
Reaction Path ◽  
Solid Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Formation Temperature ◽  
Intermediate Composition ◽  
Solid Phase Reactions

The effects of Si1−xGex alloy composition on the Ti-Si1−xGex solid phase reaction have been examined. Specifically, effects on the titanium gcrmanosilicide phase formation sequence. C54 Ti(Si1−yGey)2 nucleation temperature, and C54 Ti(Si1−yGey)2 morphology were examined. It was determined that the Ti-Si1−xGex reaction follows a “Ti-Si-like” reaction path for Si-rich Si1−xGex alloys and follows a “Ti-Ge-like” reaction path for Ge-rich Si1−xGex alloys. The coexistence of multiple titanium germanosilicide phases was observed during Ti-Si1−xGex reactions for Si1−xGex alloys in an intermediate composition range. The morphology and stability of the resulting C54 germanosilicides were directly correlated to the Ti-Si1−xGex reaction path. Smooth continuous C54 titanium germanosilicide was formed for samples with Si1−xGex compositions in the “Ti-Si-like” regime. Discontinuous islanded C54 germanosilicides were formed for samples with Si1−xGex compositions in the mixed phase and “Ti-Ge-like” regimes. Using rapid thermal annealing techniques, it was found that the C54 titanium germanosilicides were stable to higher temperatures. This indicated that the morphological degradation occurs after C54 phase formation. The C54 Ti(Si1−xGex)2 formation temperature was examined as a function of alloy composition and was found to decrease by ≍ 70 °C as the composition approached x ≍ 0.5. An optimum Si1−xGex alloy composition range of 0 ⋚ x ⋚ 0.36 was determined for the formation of stable-continuous-low-resistivity-C54 titanium germanosilicide films from the solid phase reaction of Ti and Si1−xGex alloy. The results were described in terms of the relevant nucleation processes.

Study of Cr Silicide Formation on Si(100) Due to Solid-Phase Reaction Using Soft X-Ray Emission Spectroscopy

1994 ◽  
Vol 33 (Part 1, No. 12A) ◽  
pp. 6667-6670 ◽  
Author(s):  
Claire Heck ◽  
Masahiko Kusaka ◽  
Masaaki Hirai ◽  
Motohiro Iwami ◽  
Hatsuo Nakamura
Keyword(s):  
Emission Spectroscopy ◽  
Solid Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Silicide Formation ◽  
X Ray

Synthesis of transfer-free graphene by solid phase reaction process in presence of a carbon diffusion barrier

2014 ◽  
Vol 129 ◽  
pp. 76-79 ◽  
Author(s):  
Muhammed Emre Ayhan ◽  
Golap Kalita ◽  
Remi Papon ◽  
Ryo Hirano ◽  
Masaki Tanemura
Keyword(s):  
Diffusion Barrier ◽  
Solid Phase ◽  
Carbon Diffusion ◽  
Reaction Process ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Free Graphene

Thickness Dependent Phase Formation in Fe Thin Film and Si Substrate Solid Phase Reaction

1995 ◽  
Vol 402 ◽  
Author(s):  
G Y. Molnár ◽  
G. Pető ◽  
E. Zsoldos ◽  
Z. E. Horváth ◽  
N. Q. Khánh
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Phase Formation ◽  
Solid Phase ◽  
Iron Film ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Si Substrate ◽  
Transmission Electron ◽  
Initial Iron

AbstractThe solid phase reaction of Fe thin films with (111) Si substrate was investigated at constant annealing temperature and time (700°C, 7 minutes) as a function of the initial iron film thickness (from 5 nm to 27.5 um in 2.5 nm steps). The formed phases were analysed by X-ray diffraction, Rutherford backscattering and transmission electron microscopy and optical microscopy.After annealing FeSi phase was detected in the thinner samples. Samples with Fe layers thicker than 12.5 nm contained a β-FeSi2 phase. This special phase sequence was explained with the help of a nucleation controlled phase formation model, taking into consideration the critical radius of nuclei of the new phase. The advantages of using the film thickness as a variable during investigation of solid phase thin film reactions and the probable substrate effects are also discussed.

scholarly journals Fe3O4@C Nanoparticles Synthesized by In Situ Solid-Phase Method for Removal of Methylene Blue

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 330
Author(s):  
Hengli Xiang ◽  
Genkuan Ren ◽  
Yanjun Zhong ◽  
Dehua Xu ◽  
Zhiye Zhang ◽  
...  
Keyword(s):  
Methylene Blue ◽  
Solid Phase ◽  
Raw Materials ◽  
Phase Method ◽  
Maximum Adsorption Capacity ◽  
High Catalytic Activity ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
High Concentrations

Fe3O4@C nanoparticles were prepared by an in situ, solid-phase reaction, without any precursor, using FeSO4, FeS2, and PVP K30 as raw materials. The nanoparticles were utilized to decolorize high concentrations methylene blue (MB). The results indicated that the maximum adsorption capacity of the Fe3O4@C nanoparticles was 18.52 mg/g, and that the adsorption process was exothermic. Additionally, by employing H2O2 as the initiator of a Fenton-like reaction, the removal efficiency of 100 mg/L MB reached ~99% with Fe3O4@C nanoparticles, while that of MB was only ~34% using pure Fe3O4 nanoparticles. The mechanism of H2O2 activated on the Fe3O4@C nanoparticles and the possible degradation pathways of MB are discussed. The Fe3O4@C nanoparticles retained high catalytic activity after five usage cycles. This work describes a facile method for producing Fe3O4@C nanoparticles with excellent catalytic reactivity, and therefore, represents a promising approach for the industrial production of Fe3O4@C nanoparticles for the treatment of high concentrations of dyes in wastewater.

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