Thickness Dependent Phase Formation in Fe Thin Film and Si Substrate Solid Phase Reaction

1995 ◽  
Vol 402 ◽  
Author(s):  
G Y. Molnár ◽  
G. Pető ◽  
E. Zsoldos ◽  
Z. E. Horváth ◽  
N. Q. Khánh
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Phase Formation ◽  
Solid Phase ◽  
Iron Film ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Si Substrate ◽  
Transmission Electron ◽  
Initial Iron

AbstractThe solid phase reaction of Fe thin films with (111) Si substrate was investigated at constant annealing temperature and time (700°C, 7 minutes) as a function of the initial iron film thickness (from 5 nm to 27.5 um in 2.5 nm steps). The formed phases were analysed by X-ray diffraction, Rutherford backscattering and transmission electron microscopy and optical microscopy.After annealing FeSi phase was detected in the thinner samples. Samples with Fe layers thicker than 12.5 nm contained a β-FeSi2 phase. This special phase sequence was explained with the help of a nucleation controlled phase formation model, taking into consideration the critical radius of nuclei of the new phase. The advantages of using the film thickness as a variable during investigation of solid phase thin film reactions and the probable substrate effects are also discussed.

Solid phase reaction in Ti(thin film)/Si(substrate) with Mo interlayer: SXES and PEEM study

2004 ◽  
Vol 464-465 ◽  
pp. 107-111 ◽  
Author(s):  
J. Labis ◽  
H. Namatame ◽  
M. Taniguchi ◽  
C. Kamezawa ◽  
M. Hirai ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Si Substrate

scholarly journals A TEM STUDY OF Pd-Si THIN FILM SOLID-PHASE REACTION

1986 ◽  
Vol 35 (7) ◽  
pp. 965
Author(s):  
ZHANG JING ◽  
LIU AN-SHENG ◽  
WU ZI-QIN ◽  
GUO KE-XIN
Keyword(s):  
Thin Film ◽  
Solid Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Si Thin Film

scholarly journals Red Carbon: a Carbon-Oxygen-based covalent semiconductor for selective amine sensing

2021 ◽  
Author(s):  
Paolo Giusto ◽  
Daniel Cruz ◽  
Yael Rodriguez ◽  
Regina Rothe ◽  
Nadezda Tarakina
Keyword(s):  
Thin Film ◽  
Organic Semiconductor ◽  
Solid Phase ◽  
Carbon Films ◽  
Semiconductor Materials ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Sensing Applications ◽  
Organic Semiconductor Materials ◽  
Thin Carbon

The requirements for organic semiconductor materials and new methods for their synthesis at low temperature have risen over the last decades, especially due to concerns of sustainability. Herein, we present an innovative method for the synthesis of a so-called “red carbon” thin film, being composed of carbon and oxygen, only. This material was already described by Kappe and Ziegler at the beginning of the 20th century, but now can complement the current research on covalent organic semiconductor materials. The herein described red carbon can be homogeneous deposited on glass substrates as thin ilms which reveal a highly ordered structure. The films are highly reactive towards amines and were employed as amine vapor sensors for a scope of analogous amines. The gas-to-solid phase reaction causes a significant change of the films optical properties in all cases, blue-shifting the bandgap and the photoluminescence spectra from the red to the near UV range. The irreversible chemical reaction between the thin film and the vapor was also exploited for the preparation of nitrogen containing thin carbon films. We expect the herein presented red carbon material is of interest not only for sensing applications, but also in optoelectronics.

0.6nm-EOT high-k gate stacks with HfSiOx interfacial layer grown by solid-phase reaction between HfO2 and Si substrate

2007 ◽  
Vol 84 (9-10) ◽  
pp. 1861-1864 ◽  
Author(s):  
A. Ogawa ◽  
K. Iwamoto ◽  
H. Ota ◽  
Y. Morita ◽  
M. Ikeda ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Solid Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Gate Stacks ◽  
Si Substrate ◽  
High K

Film thickness effects in the Co–Si1−xGex solid phase reaction

1998 ◽  
Vol 84 (8) ◽  
pp. 4285-4291 ◽  
Author(s):  
B. I. Boyanov ◽  
P. T. Goeller ◽  
D. E. Sayers ◽  
R. J. Nemanich
Keyword(s):  
Film Thickness ◽  
Solid Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction

The Synthesis and Properties Studying of 1-D TaS2 Nanostructure

2007 ◽  
Vol 353-358 ◽  
pp. 2139-2142
Author(s):  
Chang Sheng Li ◽  
Yan Qing Liu ◽  
Jun Mao Li
Keyword(s):  
Large Scale ◽  
Solid Phase ◽  
Average Diameter ◽  
Test System ◽  
Lubricating Oil ◽  
One Dimension ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Transmission Electron ◽  
Specimen Test

large-scale and elegant one-dimension tubular nanostructure TaS2, have been generated successfully employing solid-phase reaction growth with tantalum and sulfur powders. Detailed experimental procedures, and the characterization of associated product, have been evaluated using transmission electron microscopy (TEM) and other techniques. The results show that the reaction yielded a lot of one dimension nanostructures of TaS2 with average diameter of one hundred nanometers and length of several micrometers (or several ten micrometers). Moreover, effect of TaS2 nanostructure, as additive in commercial lubricating oil T40, was initially measured by UMT Multi-specimen Test System (UMT-2). The results show, as additive, antiwear and bearing weight ability of 1-D TaS2 nanostructure, excelled ordinary lubricating oil at atmosphere.

scholarly journals Formation Mechanism of High-Purity Ti2AlN Powders under Microwave Sintering

Materials ◽  
2020 ◽  
Vol 13 (23) ◽  
pp. 5356
Author(s):  
Weihua Chen ◽  
Jiancheng Tang ◽  
Xinghao Lin ◽  
Yunlong Ai ◽  
Nan Ye
Keyword(s):  
Electron Microscopy ◽  
Formation Mechanism ◽  
High Purity ◽  
Solid Phase ◽  
Raw Materials ◽  
Microwave Sintering ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Scanning Calorimetry ◽  
Transmission Electron

In the present study, high-purity ternary-phase nitride (Ti2AlN) powders were synthesized through microwave sintering using TiH2, Al, and TiN powders as raw materials. X-ray diffraction (XRD), differential scanning calorimetry (DSC), transmission electron microscopy (TEM), and scanning electron microscopy (SEM) were adopted to characterize the as-prepared powders. It was found that the Ti2AlN powder prepared by the microwave sintering of the 1TiH2/1.15Al/1TiN mixture at 1250 °C for 30 min manifested great purity (96.68%) with uniform grain size distribution. The formation mechanism of Ti2AlN occurred in four stages. The solid-phase reaction of Ti/Al and Ti/TiN took place below the melting point of aluminum and formed Ti2Al and TiN0.5 phases, which were the main intermediates in Ti2AlN formation. Therefore, the present work puts forward a favorable method for the preparation of high-purity Ti2AlN powders.

Stable Solid-Phase Ohmic Contacts to n-GaAs with Diffusion Barriers

1988 ◽  
Vol 126 ◽  
Author(s):  
E. Kolawa ◽  
C. W. Nieh ◽  
W. Flick ◽  
J. Molarius ◽  
M-A. Nicolet
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Diffusion Barriers ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Resistivity Measurements ◽  
Gaas Substrates ◽  
Transmission Electron

ABSTRACTContacts to GaAs substrates with n-type epilayers formed by GaAs/Ni/Ge/WN/Au, GaAs/Ni/Ge/Ni/WN/Au and GaAs/Ge/ Ni/WN/Au systems were investigated. Ohmic contacts in these systems were formed by a solid-phase reaction between Ni/Ge and GaAs. Interfacial reaction and electrical properties of these contacts are characterized by backscattering spectrometry, transmission electron microscopy and contact resistivity measurements. Resistivities in the 10−δ Ω cm range are achieved.

Kinetic shape formation during Gd thin film and Si(100) solid phase reaction

1999 ◽  
Vol 74 (12) ◽  
pp. 1672-1674 ◽  
Author(s):  
G. L. Molnár ◽  
G. Petö ◽  
Z. Vértesy ◽  
E. Zsoldos
Keyword(s):  
Thin Film ◽  
Solid Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Shape Formation
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