Surface Passivation of GaAs Power FETs

1999 ◽  
Vol 573 ◽  
Author(s):  
Tsuyoshi Tanaka ◽  
Hidetoshi Furukawa ◽  
Kazuo Miyatsuji ◽  
Daisuke Ueda
Keyword(s):  
Surface Passivation ◽  
Frequency Dispersion ◽  
Drain Current ◽  
Electron Trap ◽  
Intermodulation Distortion ◽  
Passivation Layer ◽  
The Other ◽  
Trapping Effect ◽  
Trapping Effects

ABSTRACTThe surface passivation of GaAs power FET has been investigated. Intermodulation distortion of GaAs power FET was found to be affected by frequency dispersion which originates from electron trap at the surface in the vicinity of the gate. There are two ways to suppress the frequency dispersion. One is reducing electron trap itself by using surface passivation, the other is making surface insensitive to the surface trapping effect. We found the FET with undoped InGaP layers on the n-GaAs channel is free from surface trapping effects. The undoped InGaP layer acts as an ideal passivation layer for the channel, since it shows only 2% frequency dispersion of drain current at 1MHz compared to DC condition.

scholarly journals Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

Electronics ◽  
2021 ◽  
Vol 10 (24) ◽  
pp. 3096
Author(s):  
P. Vigneshwara Raja ◽  
Nandha Kumar Subramani ◽  
Florent Gaillard ◽  
Mohamed Bouslama ◽  
Raphaël Sommet ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Dispersion ◽  
Drain Current ◽  
Surface Region ◽  
Electron Trap ◽  
High Electron ◽  
Trap States ◽  
Dispersion Properties ◽  
Donor States ◽  
Surface Donor

The buffer and surface trapping effects on low-frequency (LF) Y-parameters of Fe-doped AlGaN/GaN high-electron mobility transistors (HEMTs) are analyzed through experimental and simulation studies. The drain current transient (DCT) characterization is also carried out to complement the trapping investigation. The Y22 and DCT measurements reveal the presence of an electron trap at 0.45–0.5 eV in the HEMT structure. On the other hand, two electron trap states at 0.2 eV and 0.45 eV are identified from the LF Y21 dispersion properties of the same device. The Y-parameter simulations are performed in Sentaurus TCAD in order to detect the spatial location of the traps. As an effective approach, physics-based TCAD models are calibrated by matching the simulated I-V with the measured DC data. The effect of surface donor energy level and trap density on the two-dimensional electron gas (2DEG) density is examined. The validated Y21 simulation results indicate the existence of both acceptor-like traps at EC –0.45 eV in the GaN buffer and surface donor states at EC –0.2 eV in the GaN/nitride interface. Thus, it is shown that LF Y21 characteristics could help in differentiating the defects present in the buffer and surface region, while the DCT and Y22 are mostly sensitive to the buffer traps.

A New Method For The Electronic And Chemical Passivation Of GaAs Surfaces Using CS2

1995 ◽  
Vol 406 ◽  
Author(s):  
Ju-Hyung Lee ◽  
Yanzhen Xu ◽  
Veronica A. Burrows ◽  
Paul F. McMillan
Keyword(s):  
Surface Passivation ◽  
Passivation Layer ◽  
Semiconductor Diode ◽  
Photoluminescence Intensity ◽  
Atmospheric Conditions ◽  
Metal Insulator ◽  
Insulating Layer ◽  
Capacitance Voltage ◽  
Chemical Passivation ◽  
Homogeneous Film

AbstractA new GaAs surface passivation method, CS2 treatment at moderate temperature was developed for effective passivation of GaAs surfaces. The CS2 treatment of GaAs surfaces at 350°C and 10 atm leads to deposition of a homogeneous film, with a thickness of several hundred Å. The passivation layer thus produced causes a significant enhancement in room temperature photoluminescence intensity and the passivation effect of the sulfide film was confirmed by Raman spectroscopy. The passivation layer remained electrically and chemically stable over a period of nine months under ambient atmospheric conditions. In-depth Auger electron spectroscopy (AES) revealed that the carbon and oxygen content in the film was negligible, whereas sulfur was uniformly distributed throughout the film. A metal-insulator-semiconductor diode whose insulating layer is produced by the CS2 treatment shows well-defined accumulation and depletion regions in its capacitance-voltage (CV) characteristics with low hysteresis.

Status of GaN-Based Power Switching Devices

2008 ◽  
Vol 600-603 ◽  
pp. 1257-1262
Author(s):  
Masahiro Hikita ◽  
Hiroaki Ueno ◽  
Hisayoshi Matsuo ◽  
Tetsuzo Ueda ◽  
Yasuhiro Uemoto ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Drain Current ◽  
Hole Injection ◽  
Power Switching ◽  
Channel Temperature ◽  
High Maximum ◽  
Technical Issues ◽  
State Breakdown ◽  
State Resistance ◽  
Heat Spreading

State-of-the-art technologies of GaN-based power switching transistors are reviewed, in which normally-off operation and heat spreading as technical issues. We demonstrate a new operation principle of GaN-based normally-off transistor called Gate Injection Transistor (GIT). The GIT utilizes hole-injection from p-AlGaN to AlGaN/GaN hetero-junction which increases electron density in the depleted channel resulting in dramatic increase of the drain current owing to conductivity modulation. The fabricated GIT on Si substrate exhibits the threshold voltage of +1.0V with high maximum drain current of 200mA/mm. The obtained on-state resistance (Ron·A) and off-state breakdown voltage (BVds) are 2.6mΩ·cm2 and 800V, respectively. These values are the best ones ever reported for GaN-based normally-off transistors. In addition, we propose the use of poly-AlN as surface passivation. The AlN has at least 200 times higher thermal conductivity than conventional SiN so that it can effectively reduce the channel temperature.

A facile route to surface passivation of both the positive and negative defects in perovskite solar cells via a self-organized passivation layer from fullerene

Solar Energy ◽  
2019 ◽  
Vol 190 ◽  
pp. 264-271 ◽  
Author(s):  
Peng-Peng Cheng ◽  
Yong-Wen Zhang ◽  
Jia-Ming Liang ◽  
Wan-Yi Tan ◽  
Xudong Chen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Perovskite Solar Cells ◽  
Passivation Layer ◽  
Self Organized ◽  
Facile Route
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