A New Differential Amplitude Spectrum for Analyzing the Trapping Effect in GaN HEMTs Based on the Drain Current Transient

2017 ◽  
Vol 64 (4) ◽  
pp. 1498-1504 ◽  
Author(s):  
Xiang Zheng ◽  
Shiwei Feng ◽  
Yamin Zhang ◽  
Xin He ◽  
Yu Wang
Keyword(s):  
Amplitude Spectrum ◽  
Drain Current ◽  
Current Transient ◽  
Trapping Effect ◽  
Gan Hemts

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

2013 ◽  
Vol 60 (10) ◽  
pp. 3166-3175 ◽  
Author(s):  
Davide Bisi ◽  
Matteo Meneghini ◽  
Carlo de Santi ◽  
Alessandro Chini ◽  
Michael Dammann ◽  
...  
Keyword(s):  
Deep Level ◽  
Drain Current ◽  
Current Transient ◽  
Gan Hemts ◽  
Transient Measurements

Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs

2014 ◽  
Vol 35 (3) ◽  
pp. 345-347 ◽  
Author(s):  
Yamin Zhang ◽  
Shiwei Feng ◽  
Hui Zhu ◽  
Chunsheng Guo ◽  
Bing Deng ◽  
...  
Keyword(s):  
Transient Response ◽  
Drain Current ◽  
Current Transient ◽  
Self Heating ◽  
Gan Hemts

Determination of AlGaN/GaN HEMT Reliability Using Optical Pumping as a Characterization Method

2012 ◽  
Vol 1432 ◽  
Author(s):  
D. Cheney ◽  
R. Deist ◽  
B. Gila ◽  
F. Ren ◽  
P. Whiting ◽  
...  
Keyword(s):  
Band Gap ◽  
Optical Pumping ◽  
Drain Current ◽  
Stress Tests ◽  
Optically Pumped ◽  
Gan Hemt ◽  
Load Line ◽  
Gan Hemts ◽  
Dc Stress

ABSTRACTBy pumping AlGaN/GaN HEMTs with below band-gap light we observe changes in drain current that correspond to the trapping and detrapping of carriers within the band-gap. These changes in drain current are indicators of trap density, since the energy from a specific wavelength of light pumps traps whose activation energies are less than or equal to that of the light source.AlGaN/GaN HEMTs on SiC with dual submicron gates with widths of 125nm, 140nm, or 170nm, are DC-stressed under three different conditions along a load line: VGS=0, VDS=5 (on-state), VGS=-2, VDS=9.2 and, VGS=-6, VDS=25 (off-state). The stress tests are interrupted at 20% degradation and the optically pumped comparisons to the baseline are measured.This paper describes the optical pumping technique and results from experiments of AlGaN/GaN HEMTs under the three DC stress biases along a load line.

scholarly journals An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects

2020 ◽  
Vol 10 (2) ◽  
pp. 1791
Author(s):  
A. Bellakhdar ◽  
A. Telia ◽  
J. L. Coutaz
Keyword(s):  
Analytical Model ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Published Data ◽  
High Electron ◽  
Self Heating ◽  
Heating Effects ◽  
Cap Layer ◽  
Gan Hemts ◽  
Sheet Density

We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. Spontaneous and piezoelectric polarizations at Al (Ga,In)N/GaN and GaN/Al(Ga,In)N interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the two-dimensional electron gas (2DEG), leading to a decrease of the drain current, and that n+-doped GaN cap layer provides a higher sheet density than undoped one. In n+GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n+GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface.

Characterization of Defects in AlGaN/GaN HEMTs Based on Nonlinear Microwave Current Transient Spectroscopy

2017 ◽  
Vol 64 (5) ◽  
pp. 2135-2141 ◽  
Author(s):  
Agostino Benvegnu ◽  
Sylvain Laurent ◽  
Olivier Jardel ◽  
Jean-Luc Muraro ◽  
Matteo Meneghini ◽  
...  
Keyword(s):  
Current Transient ◽  
Gan Hemts ◽  
Transient Spectroscopy
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