Low Energy, High Density Plasma (ICP) for Low Defect Etching and Deposition Applications on Compound Semiconductors

1999 ◽  
Vol 573 ◽  
Author(s):  
J. Etrillard ◽  
H. Maher ◽  
M. Medjdoub ◽  
J. L. Courant ◽  
Y. I. Nissim
Keyword(s):  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Point Of View ◽  
Etch Depth ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Inductively Coupled ◽  
Device Processing

ABSTRACTThe use of a low ion energy of an extremely dense plasma has been studied as a dry etching as well as a thin film deposition tool (same source, two different reactors) for InP and GaAs device processing. Under these working conditions it is expected to control well the etch depth or in the case of deposition to obtain high deposition rates. In all cases minimun ion damages are induced on the processed substrate. Both technologies are presented here from the point of view of material analysis as well as device processing demonstration. For etching, the gate recess of an InP-based HEMT has been addressed as one of the key technological step that requires such properties for good device performances. InGaAs/InAlAs HEMT like structures have been grown and the recess of the InGaAs layer has been conducted with a 13eV SiCl4 inductively coupled plasma (ICP). DLTS and AFM measurements made on the exposed AlinAs surface after InGaAs removal indicate that device quality on its electrical and structural properties are achieved. Passivation of fully processed HEMT devices with a ICP enhanced chemical vapor deposition (ICPECVD) silicon nitride film is being studied.

Composition, oxidation, and optical properties of fluorinated silicon nitride film by inductively coupled plasma enhanced chemical vapor deposition

1999 ◽  
Vol 14 (3) ◽  
pp. 995-1001 ◽  
Author(s):  
Byung-Hyuk Jun ◽  
Joon Sung Lee ◽  
Dae-Weon Kim ◽  
Tae-Hyun Sung ◽  
Byeong-Soo Bae ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Oxidation Mechanism ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Inductively Coupled

Amorphous fluorinated silicon nitride films have been deposited with the variation of NF3 flow rate using SiH4, N2, Ar, and NF3 gases by inductively coupled plasma enhanced chemical vapor deposition for the first time, and the absolute composition, oxidation mechanism, and optical properties were investigated. The absolute composition including hydrogen was performed by means of elastic recoil detection time of flight. It was found that the oxygen and fluorine contents in the film dramatically increased, but the hydrogen content decreased to below 4 at.% as the NF3 flow rate increased. The oxidation mechanism could be explained in terms of the incorporation of the activated residual oxygen species in the chamber into the film with unstable open structure by the fluorine-added plasma. It was shown that the density and optical properties such as refractive index, absorption coefficient, and optical energy gap depended on the film composition. The variations of the above properties for fluorinated silicon nitride film could be interpreted by the contents of fluorine and oxygen with high electronegativity.

scholarly journals Redeposition-Free Deep Etching in Small KY(WO4)2 Samples

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1033
Author(s):  
Simen Mikalsen Martinussen ◽  
Raimond N. Frentrop ◽  
Meindert Dijkstra ◽  
Sonia Maria Garcia-Blanco
Keyword(s):  
Inductively Coupled Plasma ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Small Samples ◽  
Deep Etching ◽  
Inductively Coupled ◽  
Edge Bead ◽  
Laser Sources ◽  
On Chip ◽  
Wet Etch

KY(WO4)2 is a promising material for on-chip laser sources. Deep etching of small KY(WO4)2 samples in combination with various thin film deposition techniques is desirable for the manufacturing of such devices. There are, however, several difficulties that need to be overcome before deep etching of KY(WO4)2 can be realized in small samples in a reproducible manner. In this paper, we address the problems of (i) edge bead formation when using thick resist on small samples, (ii) sample damage during lithography mask touchdown, (iii) resist reticulation during prolonged argon-based inductively coupled plasma reactive ion etching (ICP-RIE), and (iv) redeposited material on the feature sidewalls. We demonstrate the etching of 6.5 µm deep features and the removal of redeposited material using a wet etch procedure. This process will enable the realization of waveguides both in ion-irradiated KY(WO4)2 as well as thin KY(WO4)2 membranes transferred onto glass substrate by bonding and subsequent polishing.

Microanalytical Characterization of Structure and Defects for the Development of Low Temperature Silicon Epitaxial Growth

1999 ◽  
Vol 5 (S2) ◽  
pp. 750-751
Author(s):  
K.M. Jones ◽  
J. Thiesen
Keyword(s):  
Low Temperature ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Cross Sectional ◽  
Buried Channel ◽  
Device Processing ◽  
Current Production ◽  
New Processing ◽  
Si Epitaxy

The nano-scale dimensions of next generation VLSI and ULSI devices will drive the development of a variety of new processing requirements. Currently device processing conditions from substrate cleaning to thin film deposition require temperatures in the range of 600°C to 1200°C. In order to realize a Si device circuit architecture which integrates Si/Ge structures or the needed super abrupt junctions of buried channel CMOS, low temperature processes must replace those in current production lines. For these processes to be successfully developed and implemented, proper characterization techniques must be used. In the case of epitaxy, cross-sectional TEM is the tool of choice. We will discuss the prominent role that TEM has played in the development of a new Si epitaxy technology. Recently, at the National Renewable Energy Laboratory (NREL), we have shown low temperature, 195°C to 400°C, Si epitaxy via hot-wire chemical vapor deposition- HWCVD. In the past HWCVD has been used to produce amorphous, micro-crystalline, and polycrystalline Si thin films.

CARBON BONDING STATES AND MECHANICAL PROPERTIES OF HYDROGENATED DLC FILMS DEPOSITED IN ELECTROSTATIC AND ELECTROMAGNETIC RF PLASMA MODES

2002 ◽  
Vol 16 (06n07) ◽  
pp. 836-840 ◽  
Author(s):  
Z. SUN ◽  
S. XU ◽  
K. N. OSTRIKOV ◽  
E. L. TSAKADZE ◽  
Z. L. TSAKADZE
Keyword(s):  
Inductively Coupled Plasma ◽  
Plasma Reactor ◽  
Chemical Vapor ◽  
Film Structure ◽  
Film Deposition ◽  
Rf Plasma ◽  
Raman Spectrometry ◽  
Dlc Film ◽  
Inductively Coupled ◽  
Discharge Regime

Efficient hydrogenated diamond-like carbon (DLC) film deposition in a plasma reactor that features both the capacitive and inductively coupled operation regimes is reported. The hydrogenated DLC films have been prepared on silicon chemical vapor deposition (CVD) system. At low RF powers, the system operates as an asymmetric capacitively coupled plasma source, and the film deposition process is undertaken in the electrostatic (E) discharge regime. The films deposited in the electrostatic mode feature graphite-like structure. Above the mode transition threshold, the high-density inductively coupled plasma is produced in the electromagnetic (H) discharge regime. Raman spectrometry suggests the possibility to control relative proportions of sp2 and sp3 hybridized carbon. Variation of the DC substrate bias results in dramatic modification of the film structure from the polymeric (unbiased substrates) to the diamond-like (optimized bias). It has been shown that the deposition rate and hardness of the CH4+Ar gas mixture discharge, the DLC film exhibits mecha nical hardness of 18 GPa, Young's modulus of 170 GPa, and compressive stress of 1.3 GPa.

Raman Spectroscopy Studies on DLC Films Synthesized by PECVD Method

2014 ◽  
Vol 592-594 ◽  
pp. 842-846
Author(s):  
Vijaykumar S. Jatti ◽  
Meena Laad ◽  
T.P. Singh
Keyword(s):  
Mechanical Properties ◽  
Raman Spectroscopy ◽  
Young’S Modulus ◽  
Inductively Coupled Plasma ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Film Deposition ◽  
Inductively Coupled ◽  
Spectroscopy Studies

Diamond like carbon (DLC) is a metastable form of amorphous carbon containing fraction of sp2 and sp3 bonds. Their mechanical properties depend on the sp3 content as well as on the number and size of graphitic nanoclusters. It is noted that properties change significantly depending on the method of preparation of these films. These properties are also altered by the composition of the films. In view of this, the objective of present work was to deposit hydrogenated DLC films on p-type silicon substrate using inductively coupled plasma enhanced chemical vapor deposition (IC-PECVD) technique with varying bias voltage, bias frequency, gas deposition pressure and gas composition ratio. They play important role in film deposition process and are responsible for change in mechanical properties of the film such as hardness and Young's modulus. Raman spectroscopy was used to study the structural arrangement of carbon atoms. Significant change in the mechanical properties of the film was observed which can be attributed to the change in sp3 and sp2 contents in the DLC film. It was observed that the process parameters considerably affect the hardness and Young's modulus of the DLC films. The films of desired mechanical properties can be deposited for various industrial and biomedical applications by maintaining suitable deposition conditions.

scholarly journals Sidewall Slope Control of InP Via Holes for 3D Integration

Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 89
Author(s):  
Jongwon Lee ◽  
Kilsun Roh ◽  
Sung-Kyu Lim ◽  
Youngsu Kim
Keyword(s):  
Inductively Coupled Plasma ◽  
Sio2 Layer ◽  
Etch Depth ◽  
Rf Power ◽  
3D Integration ◽  
Inductively Coupled ◽  
Wide Range ◽  
Via Holes ◽  
Dry Etch ◽  
Icp Etcher

This is the first demonstration of sidewall slope control of InP via holes with an etch depth of more than 10 μm for 3D integration. The process for the InP via holes utilizes a common SiO2 layer as an InP etch mask and conventional inductively coupled plasma (ICP) etcher operated at room temperature and simple gas mixtures of Cl2/Ar for InP dry etch. Sidewall slope of InP via holes is controlled within the range of 80 to 90 degrees by changing the ICP power in the ICP etcher and adopting a dry-etched SiO2 layer with a sidewall slope of 70 degrees. Furthermore, the sidewall slope control of the InP via holes in a wide range of 36 to 69 degrees is possible by changing the RF power in the etcher and introducing a wet-etched SiO2 layer with a small sidewall slope of 2 degrees; this wide slope control is due to the change of InP-to-SiO2 selectivity with RF power.

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

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