Effects of annealing in silicon nitride film deposited by inductively coupled plasma CVD on GaN

2014 ◽  
Author(s):  
Xiu-juan Liu ◽  
Ni-li Wang ◽  
Yan Zhang ◽  
Xiang-yang Li
Keyword(s):  
Silicon Nitride ◽  
Inductively Coupled Plasma ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Plasma Cvd ◽  
Inductively Coupled

Composition, oxidation, and optical properties of fluorinated silicon nitride film by inductively coupled plasma enhanced chemical vapor deposition

1999 ◽  
Vol 14 (3) ◽  
pp. 995-1001 ◽  
Author(s):  
Byung-Hyuk Jun ◽  
Joon Sung Lee ◽  
Dae-Weon Kim ◽  
Tae-Hyun Sung ◽  
Byeong-Soo Bae ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Oxidation Mechanism ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Inductively Coupled

Amorphous fluorinated silicon nitride films have been deposited with the variation of NF3 flow rate using SiH4, N2, Ar, and NF3 gases by inductively coupled plasma enhanced chemical vapor deposition for the first time, and the absolute composition, oxidation mechanism, and optical properties were investigated. The absolute composition including hydrogen was performed by means of elastic recoil detection time of flight. It was found that the oxygen and fluorine contents in the film dramatically increased, but the hydrogen content decreased to below 4 at.% as the NF3 flow rate increased. The oxidation mechanism could be explained in terms of the incorporation of the activated residual oxygen species in the chamber into the film with unstable open structure by the fluorine-added plasma. It was shown that the density and optical properties such as refractive index, absorption coefficient, and optical energy gap depended on the film composition. The variations of the above properties for fluorinated silicon nitride film could be interpreted by the contents of fluorine and oxygen with high electronegativity.

Low Energy, High Density Plasma (ICP) for Low Defect Etching and Deposition Applications on Compound Semiconductors

1999 ◽  
Vol 573 ◽  
Author(s):  
J. Etrillard ◽  
H. Maher ◽  
M. Medjdoub ◽  
J. L. Courant ◽  
Y. I. Nissim
Keyword(s):  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Point Of View ◽  
Etch Depth ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Inductively Coupled ◽  
Device Processing

ABSTRACTThe use of a low ion energy of an extremely dense plasma has been studied as a dry etching as well as a thin film deposition tool (same source, two different reactors) for InP and GaAs device processing. Under these working conditions it is expected to control well the etch depth or in the case of deposition to obtain high deposition rates. In all cases minimun ion damages are induced on the processed substrate. Both technologies are presented here from the point of view of material analysis as well as device processing demonstration. For etching, the gate recess of an InP-based HEMT has been addressed as one of the key technological step that requires such properties for good device performances. InGaAs/InAlAs HEMT like structures have been grown and the recess of the InGaAs layer has been conducted with a 13eV SiCl4 inductively coupled plasma (ICP). DLTS and AFM measurements made on the exposed AlinAs surface after InGaAs removal indicate that device quality on its electrical and structural properties are achieved. Passivation of fully processed HEMT devices with a ICP enhanced chemical vapor deposition (ICPECVD) silicon nitride film is being studied.

The Applicability of Fluorinated Silicon Nitride Film As Bottom Antireflective Layer In Deep Ultraviolet Lithography

1996 ◽  
Vol 446 ◽  
Author(s):  
Jun Byung-Hyuk ◽  
Han Sang-Soo ◽  
Kim Dong-Wan ◽  
Kang Ho-Young ◽  
Koh Young-Bum ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Excimer Laser ◽  
Inductively Coupled Plasma ◽  
Gas Flow ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Ultraviolet Lithography ◽  
Si Substrates ◽  
Laser Lithography ◽  
Krf Excimer Laser

AbstractThis study describes the use of fluorinated silicon nitride film as a bottom antireflective layer (BARL) material suitable for line-patterning in quarter-micron KrF excimer laser lithography. For the structures of photoresist/BARL (300Å)/c-Si and photoresist/BARL (300 Å )/W-Si at a wavelength of 248nm, 0% reflectance could be achieved when the refractive index (n) and extinction coefficient (k) values of the film are 2.11 and 0.68 or 2.05 and 0.59, respectively. The fluorinated silicon nitride thin films on p-type (100) Si substrates obtained by inductively coupled plasma enhanced CVD have been evaluated with the variations of NF3 flow rates under the two conditions of SiH4:N2=2:15 and 3:20 (seem). The films optical constants and reflectance were investigated by spectroscopic ellipsometry combined with a reflectance simulation program. The film n and k values at 248nm vary in the ranges of 1.67~2.35 and 0.01~0.69, respectively, depending on gas flow ratio of SiH4:N2:NF3. Low reflectance of below 5% can be obtained from reflectance simulation for two deposition conditions with a BARL thickness of 300Å. In addition, the reflectance could be reduced to almost 0% by controlling film thickness. Finally, the antireflective layer performance was investigated using KrF excimer laser lithography.

Silicon nitride film growth by remote plasma CVD using Tris(dimethylamino)silane

Vacuum ◽  
1998 ◽  
Vol 51 (4) ◽  
pp. 747-750 ◽  
Author(s):  
Toru Aoki ◽  
Takuya Ogishima ◽  
Aleksander M Wróbel ◽  
Yoichiro Nakanishi ◽  
Yoshinori Hatanaka
Keyword(s):  
Silicon Nitride ◽  
Film Growth ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Plasma Cvd ◽  
Remote Plasma

scholarly journals Improvement of Silicon Nitride Film Deposition Rate by Low Frequency Double Plasma CVD Methode.

Shinku ◽  
1991 ◽  
Vol 34 (4) ◽  
pp. 427-431
Author(s):  
Mitsuo. SHIMOZUMA ◽  
Jin. MURAKAMI ◽  
Gen. TOCHITANI ◽  
Takashi. TSUJI ◽  
Hiroaki. TAGASHIRA
Keyword(s):  
Silicon Nitride ◽  
Deposition Rate ◽  
Low Frequency ◽  
Film Deposition ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Plasma Cvd ◽  
Film Deposition Rate

Deposition and characterization of low temperature silicon nitride films deposited by inductively coupled plasma CVD

2011 ◽  
Vol 257 (11) ◽  
pp. 5052-5058 ◽  
Author(s):  
Abhijeet Kshirsagar ◽  
Pradeep Nyaupane ◽  
Dhananjay Bodas ◽  
S.P. Duttagupta ◽  
S.A. Gangal
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Inductively Coupled Plasma ◽  
Plasma Cvd ◽  
Inductively Coupled ◽  
Silicon Nitride Films

Low Temperature Silicon Nitride Deposition by Inductively Coupled Plasma CVD for GaAs Applications

2019 ◽  
Vol 6 (3) ◽  
pp. 531-547 ◽  
Author(s):  
Harqkyun Kim ◽  
Youngkyu Lee ◽  
Yunju Ra ◽  
G. P. Li ◽  
J. Yota
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Inductively Coupled Plasma ◽  
Plasma Cvd ◽  
Inductively Coupled
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