Properties of Heteroepitaxial 3C-SiC Layer on Si Using Si2(CH3)6 by CVD

1999 ◽  
Vol 572 ◽  
Author(s):  
Y. Chen ◽  
Y. Masuda ◽  
Y. Nishlo ◽  
K. Matsumoto ◽  
S. Nishino
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Schottky Diodes ◽  
Acoustic Scattering ◽  
Stress And Strain ◽  
W Band ◽  
Raman Measurement ◽  
Van Der Pauw ◽  
Cubic Silicon Carbide ◽  
Sic Films

ABSTRACTSingle crystal cubic silicon carbide ( 3C-SiC ) has been deposited on Si(100) by atmospheric CVD at 1350°C using Si2(CH3)6. The 3C-SiC epilayers were characterized by XRD, Raman scattering and photoluminescence (PL). The 3C-SiC distinct TO near 796 cm−1 and LO near 973 cm−1 were recorded by Raman measurement. The PL spectra of SiC films at 11K included the nitrogen-bound exciton (N-BE) lines, the ‘defect-related’ W band near 2.15eV, and 2.13eV peak corresponding to D-A pair recombination as well as the ‘divacancy-related’ D 1 peak at 1.97eV. The thickness dependences of Raman and PL measurement were made and it was observed that tensile stress and strain in films decrease with increasing film thickness. Electrical properties of the films were measured by making schottky diodes and using Van der Pauw method. Above 300K, the electron mobility changed as μH ∼ T−1.45 ∼ −1.56 and the highest mobility was about 400 cm2V−1s−1 at room temperature. In 3C-SiC the scattering processes are affected prominently by acoustic scattering in this temperature range.

scholarly journals Bright room temperature single photon source at telecom range in cubic silicon carbide

2018 ◽  
Vol 9 (1) ◽  
Author(s):  
Junfeng Wang ◽  
Yu Zhou ◽  
Ziyu Wang ◽  
Abdullah Rasmita ◽  
Jianqun Yang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Single Photon ◽  
Single Photon Source ◽  
Cubic Silicon Carbide ◽  
Photon Source

Synthesis of Silicon Carbide Nanoparticles from Carbon Nanotubes

2012 ◽  
Vol 602-604 ◽  
pp. 183-186 ◽  
Author(s):  
Jing Liu ◽  
Rong Wu ◽  
Jin Li ◽  
Yan Fei Sun ◽  
Ji Kang Jian
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Scanning Electron Microscopy ◽  
Silicon Carbide ◽  
Room Temperature ◽  
Sic Nanoparticles ◽  
X Ray ◽  
Transmission Electron ◽  
Cubic Silicon Carbide ◽  
Scanning Electron

In this paper, we report the synthesis of cubic silicon carbide (3C-SiC) nanoparticles by direction reaction of silicon powders and carbon nanotubes. The as-prepared SiC nanoparticles were characterized by X-ray powder diffraction, scanning electron microscopy, transmission electron microscopy and Raman scattering at room temperature. The possible growth mechanism is proposed.

Room-temperature Photoluminescence at 1540 nm from Amorphous Silicon Carbide Films Implanted with Erbium

2004 ◽  
Vol 815 ◽  
Author(s):  
Spyros Gallis ◽  
Harry Efstathiadis ◽  
Mengbing Huang ◽  
Alain E. Kaloyeros ◽  
Ei Ei Nyein ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Thermal Quenching ◽  
Chemical Vapor ◽  
Nuclear Reaction Analysis ◽  
Implantation Energy ◽  
Amorphous Silicon Carbide ◽  
Room Temperature Photoluminescence ◽  
Sic Films

AbstractIn the present work, strong room-temperature photoluminescence (PL) at 1540 nm is reported from erbium-implanted and post-annealed amorphous silicon carbide (a-SiC:Er) films. The stoichiometric SiC films were grown by thermal chemical vapor deposition (TCVD) at 800°C, and then implanted to Er fluence of 3×1015 ions/cm2 using 380 keV implantation energy. Post-implantation annealing was carried out at the temperature range of 550°C to 1350°C in argon (Ar) ambient. The resulting SiC films were characterized by Auger electron spectroscopy (AES), Rutherford backscattering (RBS), Fourier transform infrared spectroscopy (FTIR), nuclear reaction analysis (NRA), x-ray diffraction (XRD), and high-resolution transmission electron microscope (HRTEM). Clear PL behavior was seen from the annealed a-SiC:Er samples, even at room temperature, with PL intensity reaching a maximum for samples annealed at 900°C.Additional studies of thermal quenching of Er luminescence from a-SiC:Er samples annealed at 900°C indicated that as the sample temperature increased from 14K to room temperature, the luminescence intensity at 1540 nm dropped by a factor of ∼ 3.6. Moreover, the PL spectra of the a-SiC:Er samples did not exhibit any defect-generated luminescence. It is suggested that the lower density of Si and C vacancies in the stoichiometric a-SiC:Er, as compared to its non-stoichiometric a-Si1-xCx counterpart, along with the incorporation of a higher Er dopant concentration, can effectively diminish defect-produced luminescence and lead to a significant improvement in PL performance.These properties suggest that stoichiometric a-SiC:Er may be a good candidate for producing optoelectronic devices operating in the 1540 nm region.

Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

2016 ◽  
Vol 76 ◽  
pp. 205-215 ◽  
Author(s):  
Amit Pawbake ◽  
Azam Mayabadi ◽  
Ravindra Waykar ◽  
Rupali Kulkarni ◽  
Ashok Jadhavar ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Hot Wire ◽  
Boron Doped ◽  
Cubic Silicon Carbide ◽  
Sic Films

DC-Magnetron Sputtered Silicon Carbide

1994 ◽  
Vol 356 ◽  
Author(s):  
M. Tenhover ◽  
I. B. Ruppel
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Ceramic Material ◽  
Room Temperature ◽  
Thick Films ◽  
Target Material ◽  
Electrically Conductive ◽  
Dense Ceramic ◽  
Amorphous Sic ◽  
Sic Films

AbstractThe preparation and properties of relatively thick films of DC magnetron sputtered SiC films is described. The films were prepared using a new ceramic sputter target material. The new target material is called Hexoloy® SG–90. It is an electrically conductive, dense ceramic material which can be used as a sputter target to yield insulating amorphous SiC thin films on room temperature substrates.

High Temperature Characterization Of Ni, W And Al Contacts To 3C-Silicon Carbide Thin Films

1997 ◽  
Vol 483 ◽  
Author(s):  
C Jacob ◽  
P Pirouz ◽  
H-I Kuo ◽  
M Mehregany
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Contact Resistance ◽  
Room Temperature ◽  
Specific Contact Resistance ◽  
Large Area ◽  
Fermi Level Pinning ◽  
Specific Contact ◽  
Current Availability ◽  
Sic Films

AbstractWith the current availability of large-area 3C-SiC films, it is imperative that stable high temperature contacts be developed for high power devices. By comparing the existing data in the literature, we demonstrate that the contact behavior on each of the different polytypes of SiC will vary significantly. In particular, we demonstrate this for 6H-SiC and 3C-SiC. The interface slope parameter, S, which is a measure of the Fermi-level pinning in each system varies between 0.4–0.5 on 6H-SiC, while it is 0.6 on 3C-SiC. This implies that the barrier heights of contacts to 3C-SiC will vary more significantly with the choice of metal than for 6H-SiC.Aluminum, nickel and tungsten were deposited on 3C-SiC films and their specific contact resistance measured using the circular TLM method. High temperature measurements (up to 400°C) were performed to determine the behavior of these contacts at operational temperatures. Aluminum was used primarily as a baseline for comparison since it melts at 660°C and cannot be used for very high temperature contacts. The specific contact resistance (ρc) for nickel at room temperature was 5 × 10−4 Ω-cm2, but increased with temperature to a value of 1.5 × 10−3 Ω-cm2 at 400°C. Tungsten had a higher room temperature × 10−3 Ω-cm2, which remained relatively constant with increasing temperature up to 400°C. This is related to the fact that there is hardly any reaction between tungsten and silicon carbide even up to 900°C, whereas nickel almost completely reacts with SiC by that temperature. Contact resistance measurements were also performed on samples that were annealed at 500°C.

100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules

2009 ◽  
Vol 615-617 ◽  
pp. 899-902 ◽  
Author(s):  
Peter A. Losee ◽  
Kevin Matocha ◽  
Steve Arthur ◽  
Eladio Delgado ◽  
Richard Beaupre ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Schottky Diodes ◽  
High Current ◽  
Large Area ◽  
Power Switching ◽  
Switching Performance ◽  
Switching Characteristics

The development of large area, up to 70m/1kV (0.45cm x 0.45cm) 4H-SiC vertical DMOSFETs is presented. DC and switching characteristics of high-current, 100Amp All-SiC power switching modules are demonstrated using 0.45cm x 0.225cm DMOSFET die and commercial Schottky diodes. The switching performance from room temperature up to T=200°C of the All-SiC modules is presented, with as much as ten times lower losses than co-fabricated Si-based modules using commercial IGBTs.

Room Temperature Quantum Emission from Cubic Silicon Carbide Nanoparticles

ACS Nano ◽  
2014 ◽  
Vol 8 (8) ◽  
pp. 7938-7947 ◽  
Author(s):  
Stefania Castelletto ◽  
Brett C. Johnson ◽  
Cameron Zachreson ◽  
David Beke ◽  
István Balogh ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Silicon Carbide Nanoparticles ◽  
Cubic Silicon Carbide

Room-Temperature Photoluminescence Observation of Stacking Faults in 3C-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 355-358 ◽  
Author(s):  
Rii Hirano ◽  
Michio Tajima ◽  
Kohei M. Itoh
Keyword(s):  
Silicon Carbide ◽  
Optical Properties ◽  
Room Temperature ◽  
Stacking Faults ◽  
Room Temperature Photoluminescence ◽  
Pl Spectra ◽  
Intensity Mapping ◽  
Pl Mapping ◽  
Pl Intensity ◽  
Cubic Silicon Carbide

We investigated the optical properties of stacking faults (SFs) in cubic silicon carbide by photoluminescence (PL) spectroscopy and mapping. The room-temperature PL spectra consisted of a 2.3 eV peak due to nitrogen and two undefined broad peaks at 1.7 eV and 0.95 eV. On the PL intensity mapping for the 2.3 eV peak, SFs appeared as dark lines. SFs which expose carbon atoms (SFC) and silicon atoms (SFSi) on the surface appeared as bright lines and dark lines, respectively, in PL mapping for the 1.7 eV and 0.95 eV peaks. We believe the two undefined peaks are associated with SFC. This technique allows us to detect SFs nondestructively and to distinguish between SFC and SFSi. We further suggest the presence of inhomogeneous stress around SFCs based on the broadening of the 2.3 eV peak.

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