Room Temperature Quantum Emission from Cubic Silicon Carbide Nanoparticles

ACS Nano ◽  
2014 ◽  
Vol 8 (8) ◽  
pp. 7938-7947 ◽  
Author(s):  
Stefania Castelletto ◽  
Brett C. Johnson ◽  
Cameron Zachreson ◽  
David Beke ◽  
István Balogh ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Silicon Carbide Nanoparticles ◽  
Cubic Silicon Carbide

scholarly journals Bright room temperature single photon source at telecom range in cubic silicon carbide

2018 ◽  
Vol 9 (1) ◽  
Author(s):  
Junfeng Wang ◽  
Yu Zhou ◽  
Ziyu Wang ◽  
Abdullah Rasmita ◽  
Jianqun Yang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Single Photon ◽  
Single Photon Source ◽  
Cubic Silicon Carbide ◽  
Photon Source

Synthesis of Silicon Carbide Nanoparticles from Carbon Nanotubes

2012 ◽  
Vol 602-604 ◽  
pp. 183-186 ◽  
Author(s):  
Jing Liu ◽  
Rong Wu ◽  
Jin Li ◽  
Yan Fei Sun ◽  
Ji Kang Jian
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Scanning Electron Microscopy ◽  
Silicon Carbide ◽  
Room Temperature ◽  
Sic Nanoparticles ◽  
X Ray ◽  
Transmission Electron ◽  
Cubic Silicon Carbide ◽  
Scanning Electron

In this paper, we report the synthesis of cubic silicon carbide (3C-SiC) nanoparticles by direction reaction of silicon powders and carbon nanotubes. The as-prepared SiC nanoparticles were characterized by X-ray powder diffraction, scanning electron microscopy, transmission electron microscopy and Raman scattering at room temperature. The possible growth mechanism is proposed.

Properties of Heteroepitaxial 3C-SiC Layer on Si Using Si2(CH3)6 by CVD

1999 ◽  
Vol 572 ◽  
Author(s):  
Y. Chen ◽  
Y. Masuda ◽  
Y. Nishlo ◽  
K. Matsumoto ◽  
S. Nishino
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Schottky Diodes ◽  
Acoustic Scattering ◽  
Stress And Strain ◽  
W Band ◽  
Raman Measurement ◽  
Van Der Pauw ◽  
Cubic Silicon Carbide ◽  
Sic Films

ABSTRACTSingle crystal cubic silicon carbide ( 3C-SiC ) has been deposited on Si(100) by atmospheric CVD at 1350°C using Si2(CH3)6. The 3C-SiC epilayers were characterized by XRD, Raman scattering and photoluminescence (PL). The 3C-SiC distinct TO near 796 cm−1 and LO near 973 cm−1 were recorded by Raman measurement. The PL spectra of SiC films at 11K included the nitrogen-bound exciton (N-BE) lines, the ‘defect-related’ W band near 2.15eV, and 2.13eV peak corresponding to D-A pair recombination as well as the ‘divacancy-related’ D 1 peak at 1.97eV. The thickness dependences of Raman and PL measurement were made and it was observed that tensile stress and strain in films decrease with increasing film thickness. Electrical properties of the films were measured by making schottky diodes and using Van der Pauw method. Above 300K, the electron mobility changed as μH ∼ T−1.45 ∼ −1.56 and the highest mobility was about 400 cm2V−1s−1 at room temperature. In 3C-SiC the scattering processes are affected prominently by acoustic scattering in this temperature range.

Room-Temperature Photoluminescence Observation of Stacking Faults in 3C-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 355-358 ◽  
Author(s):  
Rii Hirano ◽  
Michio Tajima ◽  
Kohei M. Itoh
Keyword(s):  
Silicon Carbide ◽  
Optical Properties ◽  
Room Temperature ◽  
Stacking Faults ◽  
Room Temperature Photoluminescence ◽  
Pl Spectra ◽  
Intensity Mapping ◽  
Pl Mapping ◽  
Pl Intensity ◽  
Cubic Silicon Carbide

We investigated the optical properties of stacking faults (SFs) in cubic silicon carbide by photoluminescence (PL) spectroscopy and mapping. The room-temperature PL spectra consisted of a 2.3 eV peak due to nitrogen and two undefined broad peaks at 1.7 eV and 0.95 eV. On the PL intensity mapping for the 2.3 eV peak, SFs appeared as dark lines. SFs which expose carbon atoms (SFC) and silicon atoms (SFSi) on the surface appeared as bright lines and dark lines, respectively, in PL mapping for the 1.7 eV and 0.95 eV peaks. We believe the two undefined peaks are associated with SFC. This technique allows us to detect SFs nondestructively and to distinguish between SFC and SFSi. We further suggest the presence of inhomogeneous stress around SFCs based on the broadening of the 2.3 eV peak.

High thermal conductivity of pure dense SiC ceramics prepared via HTPVT

2019 ◽  
Vol 12 (03) ◽  
pp. 1950032 ◽  
Author(s):  
Yuchen Deng ◽  
Yaming Zhang ◽  
Nanlong Zhang ◽  
Qiang Zhi ◽  
Bo Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Grain Size ◽  
Phase Composition ◽  
Room Temperature ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Growth Substrate ◽  
Sic Ceramics ◽  
Evolution Of Microstructure

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].

Theoretical study of intrinsic defects in cubic silicon carbide 3C -SiC

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Peter A. Schultz ◽  
Renee M. Van Ginhoven ◽  
Arthur H. Edwards
Keyword(s):  
Silicon Carbide ◽  
Theoretical Study ◽  
Intrinsic Defects ◽  
Cubic Silicon Carbide

Fast Selective Sensing of Nitrogen-Based Gases Utilizing δ-MnO2-Epitaxial Graphene-Silicon Carbide Heterostructures for Room Temperature Gas Sensing

2020 ◽  
Vol 29 (5) ◽  
pp. 846-852
Author(s):  
Michael D. Pedowitz ◽  
Soaram Kim ◽  
Daniel I. Lewis ◽  
Balaadithya Uppalapati ◽  
Digangana Khan ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Gas Sensing ◽  
Epitaxial Graphene
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