DC-Magnetron Sputtered Silicon Carbide

1994 ◽  
Vol 356 ◽  
Author(s):  
M. Tenhover ◽  
I. B. Ruppel
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Ceramic Material ◽  
Room Temperature ◽  
Thick Films ◽  
Target Material ◽  
Electrically Conductive ◽  
Dense Ceramic ◽  
Amorphous Sic ◽  
Sic Films

AbstractThe preparation and properties of relatively thick films of DC magnetron sputtered SiC films is described. The films were prepared using a new ceramic sputter target material. The new target material is called Hexoloy® SG–90. It is an electrically conductive, dense ceramic material which can be used as a sputter target to yield insulating amorphous SiC thin films on room temperature substrates.

Deposition of Thin Films of Silicon Carbide on Fused Quartz and on Sapphire by Laser Ablation of Ceramic Silicon Carbide Targets

1992 ◽  
Vol 285 ◽  
Author(s):  
L. Rimai ◽  
R. Ager ◽  
J. Hangas ◽  
E. M. Loaothetis ◽  
Nayef Abu-ageel ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Energy Gap ◽  
Fused Silica ◽  
High Resistivity ◽  
Fused Quartz ◽  
Amorphous Sic ◽  
Very High

ABSTRACTAblation of ceramic silicon carbide with 351 nm excimer radiation was used to depositSIC films on fused silica and on sapphire. For deposition temperatures above 850° C, diffraction shows the films to be crystalline with the [111] axis preferentially oriented normally to the film. Optical spectra show an indirect energy gap at 2.2 eV, near that for the cubic polytype, although the 200 diffractions are absent. Room temperature resistivities range between .02 to .1 Ωcm. Deposition below 600° C yields amorphous SiC with no diffraction bands, low and variable optical band gap and very high resistivity.

Oxidation of PECVD SiC Deposited from Trimethylsilane

1998 ◽  
Vol 555 ◽  
Author(s):  
Peter A. DiFonzo ◽  
Mona Massuda ◽  
James T. Kelliher
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Oxidation Kinetics ◽  
Stoichiometric Composition ◽  
Chemical Vapor ◽  
Oxidation Rates ◽  
Chemical Vapor Deposited ◽  
Kinetics Of ◽  
Sic Films ◽  
Deposition Conditions

AbstractThe stoichiometric composition and oxidation rates ( wet or dry ) of plasma enhanced chemical vapor deposited (PECVD) silicon carbide (SiC) films are effected by the deposition conditions of trimethylsilane (3MS) and carrier gas. We report the oxidation kinetics of SiC thin films deposited in a modified commercial PECVD reactor. A standard horizontal atmospheric furnace in the temperature range of 925–1100°C was used in the oxidation. Oxidized films were measured optically by commercially available interferometer and ellipsometer tools in addition to mechanically using a commercially available profilometer. Activation energies of the parabolic rates were in the range of 20.93 to 335.26 kJ/mol.

scholarly journals Metal–insulator-transition engineering by modulation tilt-control in perovskite nickelates for room temperature optical switching

2018 ◽  
Vol 115 (38) ◽  
pp. 9515-9520 ◽  
Author(s):  
Zhaoliang Liao ◽  
Nicolas Gauquelin ◽  
Robert J. Green ◽  
Knut Müller-Caspary ◽  
Ivan Lobato ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Switching ◽  
Room Temperature ◽  
Target Material ◽  
Insulator Transition ◽  
Fine Tuning ◽  
Perovskite Oxide ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Bond Angles

In transition metal perovskites ABO3, the physical properties are largely driven by the rotations of the BO6 octahedra, which can be tuned in thin films through strain and dimensionality control. However, both approaches have fundamental and practical limitations due to discrete and indirect variations in bond angles, bond lengths, and film symmetry by using commercially available substrates. Here, we introduce modulation tilt control as an approach to tune the ground state of perovskite oxide thin films by acting explicitly on the oxygen octahedra rotation modes—that is, directly on the bond angles. By intercalating the prototype SmNiO3 target material with a tilt-control layer, we cause the system to change the natural amplitude of a given rotation mode without affecting the interactions. In contrast to strain and dimensionality engineering, our method enables a continuous fine-tuning of the materials’ properties. This is achieved through two independent adjustable parameters: the nature of the tilt-control material (through its symmetry, elastic constants, and oxygen rotation angles), and the relative thicknesses of the target and tilt-control materials. As a result, a magnetic and electronic phase diagram can be obtained, normally only accessible by A-site element substitution, within the single SmNiO3 compound. With this unique approach, we successfully adjusted the metal–insulator transition (MIT) to room temperature to fulfill the desired conditions for optical switching applications.

Focused Ion-Beam (FIB) Nanomachining of Silicon Carbide (SiC) Stencil Masks for Nanoscale Patterning

2012 ◽  
Vol 717-720 ◽  
pp. 889-892 ◽  
Author(s):  
Hamidreza Zamani ◽  
Seung Wan Lee ◽  
Amir Avishai ◽  
Christian A. Zorman ◽  
R. Mohan Sankaran ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Quality ◽  
Nanoscale Patterning ◽  
Different Types ◽  
Thin Membranes ◽  
Amorphous Sic ◽  
Nanoscale Features

We report on experimental explorations of using focused ion beam (FIB) nanomachining of different types of silicon carbide (SiC) thin membranes, for making robust, high-quality stencil masks for new emerging options of nanoscale patterning. Using thin films and membranes in polycrystalline SiC (poly-SiC), 3C-SiC, and amorphous SiC (a-SiC) with thicknesses in the range of t~250nm−1.6μm, we have prototyped a series of stencil masks, with nanoscale features routinely down to ~100nm.

Early stages of the growth of BaTiO3 thin films studied by Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 706-707
Author(s):  
M. Grant Norton ◽  
Gerald R. English ◽  
Christopher Scarfone ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Room Temperature ◽  
High Temperature Superconductors ◽  
Pulsed Laser ◽  
Target Material ◽  
Pulsed Laser Ablation ◽  
Cubic Phase ◽  
Transmission Electron ◽  
Tetragonal Form

Barium titanate (BaTiO3) may be used in a number of thin-film applications in electronic and optoelectronic devices. For these devices the formation of epitactic films of the correct stoichiometry and phase is essential. In particular, the tetragonal form of BaTiO3, which is stable at room temperature, exhibits ferro-, pyro- and piezoelectric properties. It is desirable to form films of the tetragonal phase directly and thus to avoid formation of either amorphous or polycrystalline material or to form material of the non-ferroelectric cubic phase. Recently two techniques, pulsed-laser ablation and reactive evaporation, have been used to form BaTiO3 thin-films. In the present study BaTiO3 thin-films have been formed using the pulsed-laser ablation technique. Pulsed-laser ablation is now widely used to produce thin-films of the high temperature superconductors and has many advantages over other techniques, in particular the formation of films which maintain the stoichiometry of the target material and by controlling the processing conditions the formation of films having defined crystalline phases.

scholarly journals Mechanical Properties of 3C-SiC Films for MEMS Applications

2007 ◽  
Vol 1049 ◽  
Author(s):  
Jayadeep Deva Reddy ◽  
Alex A. Volinsky ◽  
Christopher L. Frewin ◽  
Chris Locke ◽  
Stephen E. Saddow
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Silicon Carbide ◽  
Plastic Deformation ◽  
Elastic Modulus ◽  
Single Crystal ◽  
Elastic Contact ◽  
Si Substrates ◽  
Sic Films

AbstractThere is a technological need for hard thin films with high elastic modulus and fracture toughness. Silicon carbide (SiC) fulfills such requirements for a variety of applications at high temperatures and for high-wear MEMS. A detailed study of the mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si substrates was performed by means of nanoindentation using a Berkovich diamond tip. The thickness of both the single and polycrystalline SiC films was around 1-2 μm. Under indentation loads below 500 μN both films exhibit Hertzian elastic contact without plastic deformation. The polycrystalline SiC films have an elastic modulus of 457 GPa and hardness of 33.5 GPa, while the single crystalline SiC films elastic modulus and hardness were measured to be 433 GPa and 31.2 GPa, respectively. These results indicate that polycrystalline SiC thin films are more attractive for MEMS applications when compared with the single crystal 3C-SiC, which is promising since growing single crystal 3C-SiC films is more challenging.

Conductive Tungsten-Based Layers Synthesized by Ion Implantation into 6H-Silicon Carbide

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Weishart ◽  
J. Schoneich ◽  
M. Voelskow ◽  
W. Skorupa
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Depth Distribution ◽  
Ostwald Ripening ◽  
Rutherford Backscattering Spectrometry ◽  
High Dose ◽  
Electrically Conductive ◽  
Gaussian Shape ◽  
Implantation Temperature ◽  
High Dose Implantation

AbstractWe studied high dose implantation of tungsten into 6H-silicon carbide in order to synthesize an electrically conductive layer. Implantation was performed at 200 keV with a dose of 1.2x 1017 WIcm 2 at temperatures between 200°C and 400°C. The influence of implantation temperature on the distribution of W in SiC was investigated and compared to results obtained earlier from room temperature (RT) and 500°C implants. Rutherford backscattering spectrometry (RBS) was employed to study the structure and composition of the implanted layers. Implantation at temperatures between RT and 300°C did not influence the depth distribution of C, Si and W. The W depth profile shows a conventional Gaussian shape. Implanting at higher temperatures led to a more confined W rich layer in the SiC. This confinement is explained by Ostwald ripening which is enabled during implantation at temperatures above 300°C. The depth of the implantation induced damage decreases slightly with increasing implantation temperature, except for 400°C implantation. The amount of damage, however, is significantly reduced only for implantation at 500°C.

High Temperature Nanoindentation Testing of Amorphous SiC and B4C Thin Films

2016 ◽  
Vol 368 ◽  
pp. 115-118
Author(s):  
Radim Čtvrtlík ◽  
Jan Tomastik ◽  
Petr Schovánek
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Elastic Modulus ◽  
High Temperature ◽  
Magnetron Sputtering ◽  
Amorphous Silicon ◽  
Reactive Magnetron ◽  
Nanoindentation Testing ◽  
Amorphous Sic ◽  
Sic Film

Amorphous silicon carbide (a-SiC) and boron carbide (a-B4C) thin films were deposited using reactive magnetron sputtering of SiC and B4C target, respectively. Nanoindentation tests performed up to 450 °C in air were performed to explore and compare their hardness and elastic modulus.Hardness of a-B4C film decreases at smaller rate in comparison to a-SiC film up to 450 °C. Similarly, elastic modulus value of B4C is more stable with temperature than that of a-SiC.

Argon incorporation on silicon carbide thin films deposited by bias co-sputtering technique

2012 ◽  
Vol 1433 ◽  
Author(s):  
H. S. Medeiros ◽  
R. S. Pessoa ◽  
M. A. Fraga ◽  
L. V. Santos ◽  
H. S. Maciel ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Substrate Heating ◽  
Opposite Behavior ◽  
Sic Film ◽  
Sic Films ◽  
Argon Content ◽  
Negative Substrate Bias

ABSTRACTThe influence of negative substrate bias on the chemical, electrical and mechanical properties of silicon carbide (SiC) thin films deposited onto (100) silicon substrate by dc magnetron cosputtering without external substrate heating is reported. These studies were performed by using the following techniques: Rutherford backscattering spectroscopy (RBS), profilometry, Raman spectroscopy, four-point probe method and nanoindentation. The results indicate that there is a good correlation between the substrate bias voltage and the argon incorporation into SiC film, namely, the SiC films deposited under substrate bias of –200 V and –300 V have higher argon content and higher elastic modulus and hardness than those deposited at 0 V. An opposite behavior was found for electrical resistivity: the SiC deposited at –300 V has resistivity of 0.45 Ω.cm whereas the deposited at 0 V has 7.0 Ω.cm.

Room-temperature Photoluminescence at 1540 nm from Amorphous Silicon Carbide Films Implanted with Erbium

2004 ◽  
Vol 815 ◽  
Author(s):  
Spyros Gallis ◽  
Harry Efstathiadis ◽  
Mengbing Huang ◽  
Alain E. Kaloyeros ◽  
Ei Ei Nyein ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Thermal Quenching ◽  
Chemical Vapor ◽  
Nuclear Reaction Analysis ◽  
Implantation Energy ◽  
Amorphous Silicon Carbide ◽  
Room Temperature Photoluminescence ◽  
Sic Films

AbstractIn the present work, strong room-temperature photoluminescence (PL) at 1540 nm is reported from erbium-implanted and post-annealed amorphous silicon carbide (a-SiC:Er) films. The stoichiometric SiC films were grown by thermal chemical vapor deposition (TCVD) at 800°C, and then implanted to Er fluence of 3×1015 ions/cm2 using 380 keV implantation energy. Post-implantation annealing was carried out at the temperature range of 550°C to 1350°C in argon (Ar) ambient. The resulting SiC films were characterized by Auger electron spectroscopy (AES), Rutherford backscattering (RBS), Fourier transform infrared spectroscopy (FTIR), nuclear reaction analysis (NRA), x-ray diffraction (XRD), and high-resolution transmission electron microscope (HRTEM). Clear PL behavior was seen from the annealed a-SiC:Er samples, even at room temperature, with PL intensity reaching a maximum for samples annealed at 900°C.Additional studies of thermal quenching of Er luminescence from a-SiC:Er samples annealed at 900°C indicated that as the sample temperature increased from 14K to room temperature, the luminescence intensity at 1540 nm dropped by a factor of ∼ 3.6. Moreover, the PL spectra of the a-SiC:Er samples did not exhibit any defect-generated luminescence. It is suggested that the lower density of Si and C vacancies in the stoichiometric a-SiC:Er, as compared to its non-stoichiometric a-Si1-xCx counterpart, along with the incorporation of a higher Er dopant concentration, can effectively diminish defect-produced luminescence and lead to a significant improvement in PL performance.These properties suggest that stoichiometric a-SiC:Er may be a good candidate for producing optoelectronic devices operating in the 1540 nm region.

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