Real-time x-ray scattering study of sputter-deposited LaNiO3 thin films on Si substrates

1999 ◽  
Vol 569 ◽  
Author(s):  
Hsin-Yi Lee ◽  
Chih-Hao Lee ◽  
Keng S. Liang ◽  
Tai-Bor Wu
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Amorphous Film ◽  
Amorphous Layer ◽  
Sputtering Deposition ◽  
X Ray ◽  
Si Substrates ◽  
Plane Normal ◽  
Integrated Intensities

ABSTRACTReal-time x-ray reflectivity and diffraction measurements under in-situ sputtering deposition conditions were performed to study the crystallization behavior of LaNiO3thin films on Si substrate. We found that an amorphous layer of 60 Å was grown in the first 6 min of the deposition and subsequently a polycrystalline overlayer was developed as observed from the in-situ x-ray reflectivity curves and diffraction patterns. Polycrystalline columnar textures of (110) and (100) were grown on the top of this amorphous film. By comparing the integrated intensities of two Bragg peaks in the plane normal of x-ray diffraction, it was found that the ability of (100)-texturization enhanced with increasing film thickness over a certain critical value.

Real-time x-ray scattering study of growth behavior of sputter-deposited LaNiO3 thin films on Si substrates

2000 ◽  
Vol 15 (12) ◽  
pp. 2606-2611 ◽  
Author(s):  
Hsin-Yi Lee ◽  
K. S. Liang ◽  
Chih-Hao Lee ◽  
Tai-Bor Wu
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Transition Layer ◽  
Growth Behavior ◽  
X Ray Diffraction ◽  
Random Orientation ◽  
X Ray ◽  
Si Substrates ◽  
Diffraction Patterns

Real-time x-ray reflectivity and diffraction measurements under in situ sputtering conditions were employed to study the growth behavior of LaNiO3 thin films on a Si substrate. Our results clearly show there is a transition layer of 60 Å, which grew in the first 6 min of deposition. The in situ x-ray-diffraction patterns indicated that this transition layer is amorphous. Subsequently, a polycrystalline overlayer grew as observed from the in situ x-ray reflectivity curves and diffraction patterns. Nucleation and growth took place on this transition layer with random orientation and then the polycrystalline columnar textures of (100) and (110) grew on the top of this random orientation layer. By comparing the integrated intensities of two Bragg peaks in the plane normal of x-ray diffraction, it was found that a crossover of the growth orientation from the ⟨110⟩ to the ⟨100ߩ direction occurred and the ability of (100) texturization enhanced with increasing film thickness beyond a certain critical value.

Kinetics of Ion-Exchange Reactions in Hybrid Organic–Inorganic Perovskite Thin Films Studied by In Situ Real-Time X-ray Scattering

2018 ◽  
Vol 9 (23) ◽  
pp. 6750-6754 ◽  
Author(s):  
Alessandro Greco ◽  
Alexander Hinderhofer ◽  
M. Ibrahim Dar ◽  
Neha Arora ◽  
Jan Hagenlocher ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Exchange ◽  
Real Time ◽  
Exchange Reactions ◽  
Inorganic Perovskite ◽  
X Ray ◽  
X Ray Scattering ◽  
Kinetics Of ◽  
Kinetics Of Ion Exchange

Real-Time Investigations on the Formation of Cu(In,Ga)Se2 While Annealing Precursors Produced with a Combination of Sputtering and Thermal Evaporation

2007 ◽  
Vol 1012 ◽  
Author(s):  
Stefan Jost ◽  
Frank Hergert ◽  
Rainer Hock ◽  
Michael Purwins
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Thermal Evaporation ◽  
Indium Selenide ◽  
Transfer Reactions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Precursor Phase ◽  
Elemental Layer

AbstractWe have investigated the formation of Cu(In,Ga)Se2 thin films by real-time X-ray diffraction (XRD) experiments while annealing differently deposited and composed stacked elemental layer (SEL) precursors.The in-situ measurements during the selenization of bi-layered Cu/In precursors reveal, that the semiconductor formation process is similar for precursors with thermally evaporated or sputtered indium. In both cases, the formation of binary copper and indium selenides is observed at temperatures around the melting point of selenium. After subsequent selenium transfer reactions, the chalcopyrite CuInSe2 is formed from the educt phases Cu2-xSe and InSe.The addition of gallium leads to the formation of the intermetallic precursor phase Cu9Ga4, which reduces the overall amount of copper and gallium selenides at process temperatures above 500 K. This causes an ongoing selenization in the indium selenium subsystem, which results in the formation of CuInSe2 from the educt phases Cu2-xSe and the selenium richest indium selenide g-In2Se3.

Nucleation, growth, and stability of WSe2 thin films deposited on HOPG examined using in situ, real-time synchrotron x-ray radiation

2022 ◽  
Vol 40 (1) ◽  
pp. 012201
Author(s):  
Hugh J. Bullen ◽  
Suresh Vishwanath ◽  
Rambert K. Nahm ◽  
H. Grace Xing ◽  
James R. Engstrom
Keyword(s):  
Thin Films ◽  
Real Time ◽  
X Ray ◽  
Nucleation Growth

Real Time Ellipsometric Study of Boron Nitride Thin Film Growth

1995 ◽  
Vol 410 ◽  
Author(s):  
E. Bertran ◽  
A. Canillas ◽  
J. Campmany ◽  
M. El Kasmi ◽  
E. Pascual ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Boron Nitride ◽  
Real Time ◽  
Film Growth ◽  
Thin Film Growth ◽  
Si Substrates ◽  
Rf Glow Discharge

ABSTRACTWe present an in situ study of the growth of boron nitride thin films by real time ellipsometry. Films were produced in a PECVD reactor by rf glow discharge decomposition of ammonia (pure) and diborane (1% in hydrogen), on Ni-Cr coated c-Si substrates placed either on the powered electrode or on the grounded electrode of the reactor. A fast phase-modulated ellipsometer performed the real time monitoring of the growth processes at 350 nm. The ellipsometric angle trayectories were obtained through an autocalibrated method, especially suitable for the in situ optical analysis of transparent thin films. We applied several thin film growth optical models (homogeneous, two-layer, surface roughness) to analyze parameters of the films such as refractive index, extinction coefficient, roughness and deposition rate. In all the cases studied, the two-layer model fits well with the ellipsometric measurements, but a more sofisticated model considering a variable refractive index could better describe these films.

MBE Growth of Ferroelectric YMnO3 Thin Films on Si(111) Using Y2O3 Buffer Layers

1998 ◽  
Vol 541 ◽  
Author(s):  
Shogo Imada ◽  
Shigeto Shouriki ◽  
Eisuke Tokumitsu ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Ferroelectric Properties ◽  
High Energy ◽  
Buffer Layers ◽  
Mbe Growth ◽  
Rocking Curve ◽  
X Ray ◽  
Si Substrates

AbstractA ferroelectric YMnO3 thin films are grown on Si (111) substrates using Y2O3 buffer layers by molecular beam epitaxy (MBE). In-situ reflection high-energy electron diffraction (RHEED) analyses show that both Y2O3 and YMnO3 films are epitaxially grown on Si substrates. X-ray rocking curve measurements also show that the best FWHM (full width at half maximum) values for Y2O3 and YMnO3 films are 0.40° and 0.8°, respectively. C-V characteristics of Al/YMnO3/Y2O3/Si structures indicate the ferroelectric properties of YMnO3 films with a memory window of 0.7V.

A Study of Switching Behavior in Pb(Zr,Ti) O3 Thin Films Using X-Ray Diffraction

1994 ◽  
Vol 361 ◽  
Author(s):  
Michael O. Eatough ◽  
Duane Dimos ◽  
Bruce A. Tuttle ◽  
William L. Warren ◽  
R. Ramesh
Keyword(s):  
Thin Films ◽  
Hysteresis Loop ◽  
Domain Switching ◽  
Switching Behavior ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Si Substrates ◽  
Intensity Changes

ABSTRACTPb(Zr,Ti)O3 (PZT) thin films are being developed for use in optical and electronic memory devices. To study ferroelectric switching behavior, we have produced relatively untextured PZT thin films on Si substrates. We have developed a method for using x-ray diffraction to observe domain switching in situ. Our study involved the use of a micro-diffractometer to monitor the switching behavior in relatively small (0.7mm diameter) electroded areas. Diffraction analyses were done while DC voltages were applied and removed, representing several places in the hysteresis loop. In particular, we were looking for relative intensity changes in the [h 00],[00l] diffraction peaks as a function of position in the hysteresis loop. Our study indicates that the 90° domain switching exhibited by bulk ferroelectrics, is very limited in films on Si when grain sizes are less than about 1 μm.

‘In-situ’ Solution Processed Room Temperature Ferromagnetic MgO Thin Films Printed by Inkjet Technique

2011 ◽  
Vol 1292 ◽  
Author(s):  
Yan Wu ◽  
Yiqiang Zhan ◽  
Mats Fahlman ◽  
Mei Fang ◽  
K. V. Rao ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Defect Structure ◽  
Room Temperature ◽  
Solution Processed ◽  
X Ray ◽  
Si Substrates ◽  
Ph Values

ABSTRACTWe report on ‘in-situ’ solution processed homogeneous (200) oriented MgO ~85nm thin films deposited on Si substrates by inkjet printing. These films are found to show ferromagnetic order beyond room temperature with a saturation magnetization MS as high as ~0.63 emu/g. X-ray photoelectron spectroscopy investigations show the absence of any possible contamination effects, while the Mg 2p, and O 1s spectra indicate that the role of defect structure at the Mg site is important in the observed magnetism. By controlling the pH values of the precursors the concentration of the defects can be varied and hence tune the magnetization at room temperature. The origin of magnetism in these MgO thin films appears to arise from the cation vacancies.

Interface motion during recrystallization of amorphous NiSi2

1990 ◽  
Vol 48 (4) ◽  
pp. 524-525
Author(s):  
J. L. Batstone ◽  
D.A. Smith
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Amorphous Film ◽  
Nucleation And Growth ◽  
Recrystallization Process ◽  
Amorphous Films ◽  
Interface Motion ◽  
Si Substrates ◽  
Spherical Caps ◽  
Crystal Interfaces

Recrystallization of amorphous NiSi2 involves nucleation and growth processes which can be studied dynamically in the electron microscope. Previous studies have shown thatCoSi2 recrystallises by nucleating spherical caps which then grow with a constant radial velocity. Coalescence results in the formation of hyperbolic grain boundaries. Nucleation of the isostructural NiSi2 results in small, approximately round grains with very rough amorphous/crystal interfaces. In this paper we show that the morphology of the rccrystallizcd film is dramatically affected by variations in the stoichiometry of the amorphous film.Thin films of NiSi2 were prepared by c-bcam deposition of Ni and Si onto Si3N4, windows supported by Si substrates at room temperature. The base pressure prior to deposition was 6 × 107 torr. In order to investigate the effect of stoichiomctry on the recrystallization process, the Ni/Si ratio was varied in the range NiSi1.8-2.4. The composition of the amorphous films was determined by Rutherford Backscattering.

Interfacial adhesion of nanoporous zeolite thin films

2006 ◽  
Vol 21 (2) ◽  
pp. 505-511 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Interfacial Adhesion ◽  
Interfacial Strength ◽  
Future Generation ◽  
In Situ Growth ◽  
Seeded Growth ◽  
Si Substrates ◽  
Film Substrate

Nanoporous silica zeolite thin films are promising candidates for future generation low-dielectric constant (low-k) materials. During the integration with metal interconnects, residual stresses resulting from the packaging processes may cause the low-k thin films to fracture or delaminate from the substrates. To achieve high-quality low-k zeolite thin films, it is important to carefully evaluate their adhesion performance. In this paper, a previously reported laser spallation technique is modified to investigate the interfacial adhesion of zeolite thin film-Si substrate interfaces fabricated using three different methods: spin-on, seeded growth, and in situ growth. The experimental results reported here show that seeded growth generates films with the highest measured adhesion strength (801 ± 68 MPa), followed by the in situ growth (324 ± 17 MPa), then by the spin-on (111 ± 29 MPa). The influence of the deposition method on film–substrate adhesion is discussed. This is the first time that the interfacial strength of zeolite thin films-Si substrates has been quantitatively evaluated. This paper is of great significance for the future applications of low-k zeolite thin film materials.

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