Nucleation, growth, and stability of WSe2 thin films deposited on HOPG examined using in situ, real-time synchrotron x-ray radiation

2022 ◽  
Vol 40 (1) ◽  
pp. 012201
Author(s):  
Hugh J. Bullen ◽  
Suresh Vishwanath ◽  
Rambert K. Nahm ◽  
H. Grace Xing ◽  
James R. Engstrom
Keyword(s):  
Thin Films ◽  
Real Time ◽  
X Ray ◽  
Nucleation Growth

Kinetics of Ion-Exchange Reactions in Hybrid Organic–Inorganic Perovskite Thin Films Studied by In Situ Real-Time X-ray Scattering

2018 ◽  
Vol 9 (23) ◽  
pp. 6750-6754 ◽  
Author(s):  
Alessandro Greco ◽  
Alexander Hinderhofer ◽  
M. Ibrahim Dar ◽  
Neha Arora ◽  
Jan Hagenlocher ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Exchange ◽  
Real Time ◽  
Exchange Reactions ◽  
Inorganic Perovskite ◽  
X Ray ◽  
X Ray Scattering ◽  
Kinetics Of ◽  
Kinetics Of Ion Exchange

Real-time x-ray scattering study of sputter-deposited LaNiO3 thin films on Si substrates

1999 ◽  
Vol 569 ◽  
Author(s):  
Hsin-Yi Lee ◽  
Chih-Hao Lee ◽  
Keng S. Liang ◽  
Tai-Bor Wu
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Amorphous Film ◽  
Amorphous Layer ◽  
Sputtering Deposition ◽  
X Ray ◽  
Si Substrates ◽  
Plane Normal ◽  
Integrated Intensities

ABSTRACTReal-time x-ray reflectivity and diffraction measurements under in-situ sputtering deposition conditions were performed to study the crystallization behavior of LaNiO3thin films on Si substrate. We found that an amorphous layer of 60 Å was grown in the first 6 min of the deposition and subsequently a polycrystalline overlayer was developed as observed from the in-situ x-ray reflectivity curves and diffraction patterns. Polycrystalline columnar textures of (110) and (100) were grown on the top of this amorphous film. By comparing the integrated intensities of two Bragg peaks in the plane normal of x-ray diffraction, it was found that the ability of (100)-texturization enhanced with increasing film thickness over a certain critical value.

Real-Time Investigations on the Formation of Cu(In,Ga)Se2 While Annealing Precursors Produced with a Combination of Sputtering and Thermal Evaporation

2007 ◽  
Vol 1012 ◽  
Author(s):  
Stefan Jost ◽  
Frank Hergert ◽  
Rainer Hock ◽  
Michael Purwins
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Thermal Evaporation ◽  
Indium Selenide ◽  
Transfer Reactions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Precursor Phase ◽  
Elemental Layer

AbstractWe have investigated the formation of Cu(In,Ga)Se2 thin films by real-time X-ray diffraction (XRD) experiments while annealing differently deposited and composed stacked elemental layer (SEL) precursors.The in-situ measurements during the selenization of bi-layered Cu/In precursors reveal, that the semiconductor formation process is similar for precursors with thermally evaporated or sputtered indium. In both cases, the formation of binary copper and indium selenides is observed at temperatures around the melting point of selenium. After subsequent selenium transfer reactions, the chalcopyrite CuInSe2 is formed from the educt phases Cu2-xSe and InSe.The addition of gallium leads to the formation of the intermetallic precursor phase Cu9Ga4, which reduces the overall amount of copper and gallium selenides at process temperatures above 500 K. This causes an ongoing selenization in the indium selenium subsystem, which results in the formation of CuInSe2 from the educt phases Cu2-xSe and the selenium richest indium selenide g-In2Se3.

Real-time x-ray scattering study of growth behavior of sputter-deposited LaNiO3 thin films on Si substrates

2000 ◽  
Vol 15 (12) ◽  
pp. 2606-2611 ◽  
Author(s):  
Hsin-Yi Lee ◽  
K. S. Liang ◽  
Chih-Hao Lee ◽  
Tai-Bor Wu
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Transition Layer ◽  
Growth Behavior ◽  
X Ray Diffraction ◽  
Random Orientation ◽  
X Ray ◽  
Si Substrates ◽  
Diffraction Patterns

Real-time x-ray reflectivity and diffraction measurements under in situ sputtering conditions were employed to study the growth behavior of LaNiO3 thin films on a Si substrate. Our results clearly show there is a transition layer of 60 Å, which grew in the first 6 min of deposition. The in situ x-ray-diffraction patterns indicated that this transition layer is amorphous. Subsequently, a polycrystalline overlayer grew as observed from the in situ x-ray reflectivity curves and diffraction patterns. Nucleation and growth took place on this transition layer with random orientation and then the polycrystalline columnar textures of (100) and (110) grew on the top of this random orientation layer. By comparing the integrated intensities of two Bragg peaks in the plane normal of x-ray diffraction, it was found that a crossover of the growth orientation from the ⟨110⟩ to the ⟨100ߩ direction occurred and the ability of (100) texturization enhanced with increasing film thickness beyond a certain critical value.

In situ Hard X-ray Photoelectron Spectroscopy on the Origin of Irreversibility in Electrochromic LixWO3 Thin Films

2021 ◽  
pp. 150898
Author(s):  
Makoto Takayanagi ◽  
Takashi Tsuchiya ◽  
Shigenori Ueda ◽  
Tohru Higuchi ◽  
Kazuya Terabe
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
X Ray

Electric-field-induced lattice distortion in epitaxial BiFeO3 thin films as determined by in situ time-resolved x-ray diffraction

2017 ◽  
Vol 111 (8) ◽  
pp. 082907 ◽  
Author(s):  
Seiji Nakashima ◽  
Osami Sakata ◽  
Hiroshi Funakubo ◽  
Takao Shimizu ◽  
Daichi Ichinose ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Lattice Distortion ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
Bifeo3 Thin Films

Thermal stability and miscibility of co-evaporated methyl ammonium lead halide (MAPbX3, X = I, Br, Cl) thin films analysed by in situ X-ray diffraction

2018 ◽  
Vol 6 (24) ◽  
pp. 11496-11506 ◽  
Author(s):  
Paul Pistor ◽  
Thomas Burwig ◽  
Carlo Brzuska ◽  
Björn Weber ◽  
Wolfgang Fränzel
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Thermal Treatment ◽  
Phase Evolution ◽  
X Ray Diffraction ◽  
Crystalline Phases ◽  
X Ray ◽  
Subsequent Thermal Treatment ◽  
Lead Halide

We present the identification of crystalline phases by in situ X-ray diffraction during growth and monitor the phase evolution during subsequent thermal treatment of CH3NH3PbX3 (X = I, Br, Cl) perovskite thin films.

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