Non Destructive Profile Measurements of Annealed Shallow Implants

1999 ◽  
Vol 568 ◽  
Author(s):  
Peter Borden ◽  
Regina Niimeiier ◽  
Karen Lingel
Keyword(s):  
Edge Effects ◽  
Spot Size ◽  
Optical Technique ◽  
Fine Scale ◽  
Exclusion Zone ◽  
Spreading Resistance ◽  
Spatial Uniformity ◽  
Difficult Challenge ◽  
Edge Exclusion ◽  
Non Destructive

ABSTRACTControlling the profile of shallow doped layers is critical for obtaining desired performance from deep sub-micron devices. An especially difficult challenge is measuring depth uniformity of the activated implant over the full area of a wafer.This paper demonstrates the capabilities of a new rapid, non-contact optical technique for measuring active doping depth of shallow implants. Employing a 2 Pim spot size, it provides a measurement of fine-scale spatial uniformity in dimensions approaching those of individual devices. By measuring multiple sites, it can rapidly characterize uniformity over large areas and edge-to-edge, without an edge exclusion zone.Data will be presented showing performance on layers varying in depth from 200 to 1200 Å. Edge-to-edge diameter scans on 8” wafers with le15, B11 implants at energies in the range of 200 to 2,000 eV and various RTA temperatures show radially symmetric uniformity patterns of depth and edge effects in the outermost centimeter. Measurements are validated based on correlation to spreading resistance profiles for a number of samples.

scholarly journals Research on the Fine-Scale Spatial Uniformity of Natural Rainfall and Rainfall from a Rainfall Simulator with a Rotary Platform (RSRP)

Atmosphere ◽  
2017 ◽  
Vol 8 (12) ◽  
pp. 113
Author(s):  
Bo Liu ◽  
Xiaolei Wang ◽  
Lihua Shi ◽  
Xichuan Liu ◽  
Zhaojing Kang ◽  
...  
Keyword(s):  
Fine Scale ◽  
Rainfall Simulator ◽  
Natural Rainfall ◽  
Spatial Uniformity ◽  
Rotary Platform

Scanning Near-Field Microwave Probe for In-line Metrology of Low-K Dielectrics

2004 ◽  
Vol 812 ◽  
Author(s):  
Vladimir V. Talanov ◽  
Robert L. Moreland ◽  
André Scherz ◽  
Andrew R. Schwartz ◽  
Youfan Liu
Keyword(s):  
Near Field ◽  
Spot Size ◽  
Excellent Correlation ◽  
K Value ◽  
Microwave Probe ◽  
Near Field Scanning ◽  
Non Destructive ◽  
Low K ◽  
Probe Measurements ◽  
Better Than

AbstractWe have developed a novel microwave near-field scanning probe technique for non-contact measurement of the dielectric constant of low-k films. The technique is non-destructive, noninvasive and can be used on both porous and non-porous dielectrics without any sample preparation. The probe has a few-micron spot size, which makes the technique well suited for real time low-k metrology on production wafers. For dielectrics with k<4 the precision and accuracy are better than 2% and 5%, respectively. Results for both SOD and CVD low-k films are presented and show excellent correlation with Hg-probe measurements. Results for k-value mapping on blanket 200mm wafers are presented as well.

X-Rays for Fluid Flow Inspection

2004 ◽  
Author(s):  
D. Chambellan ◽  
O. Gal ◽  
S. Legoupil ◽  
A. Vabre
Keyword(s):  
Heat Transfer ◽  
Fluid Flow ◽  
Specific Gravity ◽  
Void Fraction ◽  
X Rays ◽  
Optical Technique ◽  
X Ray ◽  
Non Destructive Evaluation ◽  
Intensive Use ◽  
Non Destructive

X-rays techniques are widely used in the non-destructive evaluation field for mechanical inspection. However, development of new x-ray detectors and sources over the last decade has let to an intensive use of this technique in other fields. In this paper, we describe the use of X-rays techniques in the field of fluid flow engineering (fluidics and heat transfer). This technique is very attractive since measurements can be performed even if pressure, temperature require the use of opaque walls. In addition the X-ray technique is well suited to multiphase flows where optical technique can not be used if void fraction is larger than few percents. Specific gravity, mass or void fraction are the main accessible parameters.

Optical Technique for Characterization of High Energy Ion Implanted Materials

1992 ◽  
Vol 268 ◽  
Author(s):  
Gustavo E Aizenberg ◽  
Pieter L Swart ◽  
Beatrys M Lacquet
Keyword(s):  
Refractive Index ◽  
Digital Signal ◽  
Amorphous Layer ◽  
High Energy ◽  
Optical Technique ◽  
Concentration Peak ◽  
Non Destructive ◽  
Reflectance Data ◽  
Ion Implanted

ABSTRACTA new method for the characterization of high energy ion-implanted materials has been developed. The refractive index and thickness of the amorphous layer produced by ion-implantation as well as the recrystallized layer formed by annealing of the ionimplanted samples can be determined by means of this non-destructive optical technique.For frequencies where the carriers do not respond, the measured reflectance is bilinear transformed, and further digital signal processing yields information about thickness and refractive index of the abovementioned layers. When working at optical frequencies where the carriers can respond to the electromagnetic field the physical position of the peak concentration follows directly from the processed reflectance data. Simulated and experimental data have been analyzed. The position of the boundaries between the amorphous, recrystallized and substrate zones, as well as the position of the carrier concentration peak can be determined for various steps of annealing. The algorithm has the advantage of being simple and time efficient.

scholarly journals Spatial Uniformity Assessment of Particles Distributed in a Spherical Fuel Element Using a Non-Destructive Approach

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Xuzhi Zhao ◽  
Yahui Peng ◽  
Xian-gang Wang ◽  
Libing Zhu ◽  
Houjin Chen
Keyword(s):  
Fuel Element ◽  
Spatial Uniformity ◽  
Non Destructive

Influence Of Growth Parameters On Interface Broadening In Mbe-Grown Interfaces: A Non Destructive Study By Magneto-Optics

1995 ◽  
Vol 406 ◽  
Author(s):  
W. Grieshaber ◽  
A. Haury ◽  
J. Cibert ◽  
Y. Merle d'Aubigné ◽  
A. Wasiela
Keyword(s):  
Quantum Wells ◽  
Significant Influence ◽  
Growth Parameters ◽  
Optical Technique ◽  
Mn Content ◽  
Non Destructive

AbstractWe present a detailed study of the influence of growth parameters on the broadening of CdTe-CdMnTe interfaces using a new magneto-optical technique [1,2] in MBE-grown quantum wells and superlattices. For growth temperatures up to about 300°C the Mn content decreases exponentially at the CdTe on CdMnTe interface and conversely the Cd one decreases exponentially at the CdMnTe on CdTe interface. At temperatures exceeding 300°C an additional broadening takes place which acts equally on both interfaces. Growth interruptions and modified flux stoechiometry do not exhibit significant influence on the broadening.

Junction and Profile Analysis using Carrier Illumination

2002 ◽  
Vol 717 ◽  
Author(s):  
T. Clarysse ◽  
W. Vandervorst ◽  
R. Lindsay ◽  
P. Borden ◽  
E. Budiarto ◽  
...  
Keyword(s):  
Quantitative Analysis ◽  
Systematic Study ◽  
Quantitative Measurement ◽  
Concentration Level ◽  
Profile Analysis ◽  
Surface Preparation ◽  
Optical Technique ◽  
Junction Depth ◽  
Cvd Growth ◽  
Non Destructive

AbstractCarrier Illumination™ (CI) is an optical technique for non-destructive in-line monitoring of post-anneal junction depth and pre-anneal PAI depth and dose with wafer mapping capabilities. This work intends to extend the use of the CI-measurements from a range-specific quantitative measurement towards a more universal quantitative analysis of junction depth, profile abruptness and implant dose. For that purpose this paper presents a systematic study of the CI response to a wide variety of post anneal implant processes, varying parameters including implant species, dose and energy, annealing condition, and surface preparation.Samples containing B, BF2 and As-implants with and without Ge PAI layers, with junction depths between 10-120 nm, were measured. In addition near-ideal box-like profiles (as obtained with CVD-growth) were fabricated and measured. For the abrupt CVD profiles, CI measures the junction position with sub-nm resolution independent of the CI-analysis conditions. For more graded profiles resulting from annealed implants, the correlation to the SIMS junction depth becomes a function of generation laser current (which is proportional to the applied power). As the concentration level, at which the correlation is made, can be adjusted over a concentration range of approximately 2x1018 to 2x1019/cm3 by changing the laser current, a route towards correlating the CI measurement with profile abruptness becomes feasible.

Non-destructive In-line IMC Thickness Measurement Using Acoustic Metrology for 3D Stacking

2019 ◽  
Vol 2019 (1) ◽  
pp. 000274-000279
Author(s):  
M. Mehendale ◽  
L. Hou ◽  
R. Mair ◽  
M. Kotelyanskii ◽  
M. Liebens ◽  
...  
Keyword(s):  
High Performance ◽  
Spot Size ◽  
Thickness Measurement ◽  
Fine Pitch ◽  
Thermocompression Bonding ◽  
Vertical Interconnects ◽  
3D Stacking ◽  
Silicon Vias ◽  
Accuracy And Repeatability ◽  
Non Destructive

Abstract The constant demand for small-feature-size, high performance and dense I/O applications have necessitated the development of fine-pitch vertical interconnects for 3-D integration. Microbumps and through silicon vias enable the high-density vertical interconnects. As microbumps scale, intermetallic compound formation during thermocompression bonding and its impact on reliability is a concern. In this paper, we describe the application of picosecond acoustic metrology technology as a viable option for non-destructive characterization of the intermetallic compounds. The small spot size technology allows measurement on small bumps, with very good accuracy and repeatability.

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