Fabrication of Ta2O5 Thin Films by Anodic Oxidation of Tantalum Nitride and Tantalum Silicide: Growing Mechanisms, Electrical Characterization and ULSI M-I-M Capacitor Performances

1999 ◽  
Vol 567 ◽  
Author(s):  
S. Dueñas ◽  
H. Castán ◽  
J. Barbolla ◽  
R.R. Kola ◽  
P.A. Sullivan
Keyword(s):  
Anodic Oxidation ◽  
Electrode Materials ◽  
Defect Density ◽  
Electrical Characterization ◽  
Tantalum Nitride ◽  
Large Area ◽  
Metal Insulator Metal ◽  
Tantalum Silicide ◽  
Parameter Values ◽  
Mim Capacitors

ABSTRACTIn this work we report on tantalum oxide fabricated by anodic oxidation of tantalum nitride and tantalum silicide to be used as the dielectric of Metal-Insulator-Metal (MIM) capacitors. These films exhibit greatly improved leakage currents, breakdown voltage and very low defect density, thus allowing the fabrication of large area capacitors. Several counter and bottom electrodes have been used and compared. The effects of the different processing conditions (top-electrode metals, annealing conditions, bottom electrode stoichiometry and precursor) on the capacitor performances are extensively discussed throughout this work. The electrical behavior of the resulting high-density MIM capacitors has been extensively characterized. Finally, we propose a set of selection guides to select the more appropriate process parameter values and electrode materials for a given application of these capacitors.

Material and Electrical Characterization of HfO2 Films for MIM Capacitors Application

2003 ◽  
Vol 766 ◽  
Author(s):  
Hang Hu ◽  
Chunxiang Zhu ◽  
Y. F. Lu ◽  
Y. H. Wu ◽  
T. Liew ◽  
...  
Keyword(s):  
High Performance ◽  
Analog Circuit ◽  
Electrical Characterization ◽  
Capacitance Density ◽  
Force Microscopy ◽  
Low Leakage ◽  
Atomic Force ◽  
Low Leakage Current ◽  
Metal Insulator Metal ◽  
Mim Capacitors

AbstractThin films of HfO2 high-κ dielectric have been prepared by pulsed-laser deposition (PLD) at various deposition conditions. X-ray diffraction (XRD), atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS) were used to characterize the deposited films. Experimental results show that substrate temperature has little effect on the stoichiometry, while deposition pressure plays an important role in determining the ratio of Hf and O. The electrical properties of HfO2 Metal-Insulator-Metal (MIM) capacitors were investigated at various deposition temperatures. It is shown that the HfO2 (56 nm) MIM capacitor fabricated at 200 oC shows an overall high performance, such as a high capacitance density of ∼3.0 fF/νm2, a low leakage current of 2x10-9 A/cm2 at 3 V, etc. All these indicate that the HfO2 MIM capacitors are very suitable for use in Si analog circuit applications.

scholarly journals Study on the spatial generation of breakdown spots in MIM capacitors with different aspect ratios

2015 ◽  
Vol 28 (2) ◽  
pp. 177-192
Author(s):  
Xavier Saura ◽  
Michele Riccio ◽  
Falco de ◽  
Jordi Suñé ◽  
Andrea Irace ◽  
...  
Keyword(s):  
Metal Electrode ◽  
Mathematical Treatment ◽  
Large Area ◽  
Complete Spatial Randomness ◽  
Observation Window ◽  
Aspect Ratios ◽  
Probe Point ◽  
Metal Insulator Metal ◽  
Rule Out ◽  
Mim Capacitors

Metal-insulator-metal (MIM) large area (>10-4 cm2) capacitors with different aspect ratios were subjected to severe stress conditions (Eox>4-5 MV/cm) with the aim of generating a large density of breakdown spots (from 105 to 106 spots/cm2) in the same device. The resulting mark pattern on the top metal electrode associated with the failure events was analyzed first using conventional functional estimators for two-dimensional spatial statistics. Second, as a double check, the attention was focused on the same breakdown spot patterns but in relation to the probe point location. In this latter case, the objective was to rule out any stochastic dependence of the breakdown spot distribution on the position of the source of degradation and therefore to confirm whether or not the spots follow a complete spatial randomness (CSR) process. In order to simplify the mathematical treatment of the point-to-event distributions, the voltage probe was assumed to be located at one corner of the observation window which significantly reduces the number of cases to analyze. Infrared images revealed that the generation of the spots is associated with micro-explosions within the insulating material (HfO2) and with the local volatilization of the top metal electrode (Pt).

Highly ordered nanoscale phosphomolybdate-grafted polyaniline/metal hybrid layered structures prepared via secondary sputtering phenomenon as high-performance pseudocapacitor electrodes

2021 ◽  
Author(s):  
Eun Seop Yoon ◽  
Bong Gill Choi ◽  
Hwan-Jin Jeon
Keyword(s):  
Electron Transfer ◽  
Aspect Ratio ◽  
Electrochemical Performance ◽  
High Aspect Ratio ◽  
High Performance ◽  
Electrode Materials ◽  
Rate Capability ◽  
High Specific Capacitance ◽  
High Rate ◽  
Large Area

Abstract The development of energy storage electrode materials is important for enhancing the electrochemical performance of supercapacitors. Despite extensive research on improving electrochemical performance with polymer-based materials, electrode materials with micro/nanostructures are needed for fast and efficient ion and electron transfer. In this work, highly ordered phosphomolybdate (PMoO)-grafted polyaniline (PMoO-PAI) deposited onto Au hole-cylinder nanopillar arrays is developed for high-performance pseudocapacitors. The three-dimensional nanostructured arrays are easily fabricated by secondary sputtering lithography, which has recently gained attention and features a high resolution of 10 nm, a high aspect ratio greater than 20, excellent uniformity/accuracy/precision, and compatibility with large area substrates. These 10nm scale Au nanostructures with a high aspect ratio of ~30 on Au substrates facilitate efficient ion and electron transfer. The resultant PMoO-PAI electrode exhibits outstanding electrochemical performance, including a high specific capacitance of 114 mF/cm2, a high-rate capability of 88%, and excellent long-term stability.

Quantitative defect density extraction method for metal–insulator–metal capacitor

2020 ◽  
Vol 35 (11) ◽  
pp. 115025
Author(s):  
Soo Cheol Kang ◽  
Sang Kyung Lee ◽  
Seung Mo Kim ◽  
Hyeon Jun Hwang ◽  
Byoung Hun Lee
Keyword(s):  
Extraction Method ◽  
Defect Density ◽  
Metal Insulator ◽  
Metal Insulator Metal

Growth of Large-Diameter CdZnTe and CdTeSe Boules for Hg1−xCdxTe Epitaxy: Status and Prospects

1989 ◽  
Vol 161 ◽  
Author(s):  
S. Sen ◽  
S.M. Johnson ◽  
J.A. Kiele ◽  
W.H. Konkel ◽  
J.E. Stannard
Keyword(s):  
Single Crystal ◽  
Defect Density ◽  
Large Diameter ◽  
Cylindrical Body ◽  
Growth Conditions ◽  
Grain Structure ◽  
Current Status ◽  
Conductive Heat ◽  
Large Area ◽  
Ir Detector

ABSTRACTSingle crystals of CdTe or dilute alloys of Cd1−yZnyTe (y ≤ 0.04) and CdTe1−zSez (z ≤ 0.04) with low defect density and large single-crystal area (>30 cm2) are required as substrates for high-quality epitaxial Hg1−xCdxTe thin films in the infrared (IR) detector industry. Bridgman or gradient freeze has been the most common current technique used for growing these materials. This paper reviews the current status and the evolution at SBRC of one variation of the Bridgman technique, viz., vertical-modified Bridgman (VMB), for producing large-area substrates with excellent uniformity and reproducibility. CdTe, Cd1−yZnyTe (y ≤ 0.04) and CdTe1−zSez (z ≤ 0.04) boules of 5-to 7.5-cm diameter have been grown unseeded in the present version of the VMB growth system. In general, under optimum growth conditions, the boules have the smallest grain structure (several grains) at the tip end with enhancement of grain selection as the cylindrical body of the boule is approached, resulting in one predominant and large grain occupying 70 to 80 percent of the entire boule volume; {111}-oriented Cd1−yZnyTe and CdTe1−zSez substrates with single-crystal areas as large as 50 to 60 cm2 have been obtained from these boules. Crystal quality characterized by x-ray rocking curve, IR transmission (2.5 to 20 µm), low-temperature photoluminescence, and Hall-effect measurements as a function of temperature, showed a strong correlation with the starting material quality (especially that of elemental Te and Se). Analyses of the thermal history during growth reveals that the presence of the ampoule (with charge) increases the temperature inside the furnace by 10 to 15 degrees. The temperature gradient at the tip was measured to be 8 to 10°C/cm and it dropped to 4 to 5°C/cm beyond 2.5 cm from the tip - where rapid enhancement of grain selection takes place in most boules. The effect of this temperature rise on the initial crystallization near the tip of a boule can be explained from the numerical thermal model that was developed for the growth process with radiative and conductive heat transfer included and using a temperature profile similar to that existing in the actual growth furnace. Conditions for maximizing the fraction solidifying with a slightly convex interface, hence maximizing the single-crystal yield are discussed.

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