scholarly journals Study on the spatial generation of breakdown spots in MIM capacitors with different aspect ratios

2015 ◽  
Vol 28 (2) ◽  
pp. 177-192
Author(s):  
Xavier Saura ◽  
Michele Riccio ◽  
Falco de ◽  
Jordi Suñé ◽  
Andrea Irace ◽  
...  
Keyword(s):  
Metal Electrode ◽  
Mathematical Treatment ◽  
Large Area ◽  
Complete Spatial Randomness ◽  
Observation Window ◽  
Aspect Ratios ◽  
Probe Point ◽  
Metal Insulator Metal ◽  
Rule Out ◽  
Mim Capacitors

Metal-insulator-metal (MIM) large area (>10-4 cm2) capacitors with different aspect ratios were subjected to severe stress conditions (Eox>4-5 MV/cm) with the aim of generating a large density of breakdown spots (from 105 to 106 spots/cm2) in the same device. The resulting mark pattern on the top metal electrode associated with the failure events was analyzed first using conventional functional estimators for two-dimensional spatial statistics. Second, as a double check, the attention was focused on the same breakdown spot patterns but in relation to the probe point location. In this latter case, the objective was to rule out any stochastic dependence of the breakdown spot distribution on the position of the source of degradation and therefore to confirm whether or not the spots follow a complete spatial randomness (CSR) process. In order to simplify the mathematical treatment of the point-to-event distributions, the voltage probe was assumed to be located at one corner of the observation window which significantly reduces the number of cases to analyze. Infrared images revealed that the generation of the spots is associated with micro-explosions within the insulating material (HfO2) and with the local volatilization of the top metal electrode (Pt).

Fabrication of Ta2O5 Thin Films by Anodic Oxidation of Tantalum Nitride and Tantalum Silicide: Growing Mechanisms, Electrical Characterization and ULSI M-I-M Capacitor Performances

1999 ◽  
Vol 567 ◽  
Author(s):  
S. Dueñas ◽  
H. Castán ◽  
J. Barbolla ◽  
R.R. Kola ◽  
P.A. Sullivan
Keyword(s):  
Anodic Oxidation ◽  
Electrode Materials ◽  
Defect Density ◽  
Electrical Characterization ◽  
Tantalum Nitride ◽  
Large Area ◽  
Metal Insulator Metal ◽  
Tantalum Silicide ◽  
Parameter Values ◽  
Mim Capacitors

ABSTRACTIn this work we report on tantalum oxide fabricated by anodic oxidation of tantalum nitride and tantalum silicide to be used as the dielectric of Metal-Insulator-Metal (MIM) capacitors. These films exhibit greatly improved leakage currents, breakdown voltage and very low defect density, thus allowing the fabrication of large area capacitors. Several counter and bottom electrodes have been used and compared. The effects of the different processing conditions (top-electrode metals, annealing conditions, bottom electrode stoichiometry and precursor) on the capacitor performances are extensively discussed throughout this work. The electrical behavior of the resulting high-density MIM capacitors has been extensively characterized. Finally, we propose a set of selection guides to select the more appropriate process parameter values and electrode materials for a given application of these capacitors.

Evaluation of Silicon Nitride MIM Capacitors for MMIC Applications

2013 ◽  
Vol 397-400 ◽  
pp. 1873-1877 ◽  
Author(s):  
Wu Shiung Feng ◽  
Yi Jung Chen
Keyword(s):  
Integrated Circuits ◽  
Communication Systems ◽  
High Performance ◽  
Dielectric Breakdown ◽  
Rapid Development ◽  
Optical Microscope ◽  
Aspect Ratios ◽  
Metal Insulator Metal ◽  
Ramp Voltage ◽  
Mim Capacitors

With the rapid development and huge requirements of wireless communication systems, microwave-monolithic Integrated circuits (MMIC) with high performance and reliability have become very popular and been developed rapidly. The nitride quality and the reliability of the metal-insulator-metal (MIM) capacitor can be also researched based on time-dependent dielectric breakdown (TDDB) theory. In this paper, the various Si3N4 capacitors having different area sizes, aspect ratios and corners were designed with respect to nitride quality and lifetime evaluation. All of MIM capacitors used in this study are manufactured using a special reliability mask, and the test structures include various sizes of capacitors ranging from 10Kμm2 to 250Kμm2 as well as capacitor corner check. The ramp voltage and the constant voltage tests are destructive oftentimes to identify the cause of dielectric failure. Combining these breakdown marks with an optical microscope inspection and cross section check of the 10Kμm2 capacitors as well as corner-structure check are reported in this paper. That can make the identification and classification of dielectric breakdown mechanisms. When the capacitor size is larger than that of 65K-um2, the factor of failure acceleration raises significantly.

scholarly journals Chlorosulfuric acid-assisted production of functional 2D materials

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Mohsen Moazzami Gudarzi ◽  
Maryana Asaad ◽  
Boyang Mao ◽  
Gergo Pinter ◽  
Jianqiang Guo ◽  
...  
Keyword(s):  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
Real Life ◽  
Large Area ◽  
Polar Solvents ◽  
Aspect Ratios ◽  
Two Dimensional Materials ◽  
Liquid Phase Exfoliation

AbstractThe use of two-dimensional materials in bulk functional applications requires the ability to fabricate defect-free 2D sheets with large aspect ratios. Despite huge research efforts, current bulk exfoliation methods require a compromise between the quality of the final flakes and their lateral size, restricting the effectiveness of the product. In this work, we describe an intercalation-assisted exfoliation route, which allows the production of high-quality graphene, hexagonal boron nitride, and molybdenum disulfide 2D sheets with average aspect ratios 30 times larger than that obtained via conventional liquid-phase exfoliation. The combination of chlorosulfuric acid intercalation with in situ pyrene sulfonate functionalisation produces a suspension of thin large-area flakes, which are stable in various polar solvents. The described method is simple and requires no special laboratory conditions. We demonstrate that these suspensions can be used for fabrication of laminates and coatings with electrical properties suitable for a number of real-life applications.

Pulse deposition of large area, patterned manganese oxide nanowires in variable aspect ratios without templates

2008 ◽  
Vol 10 (11) ◽  
pp. 1792-1796 ◽  
Author(s):  
Chi-Chang Hu ◽  
Kuo-Hsin Chang ◽  
Yung-Tai Wu ◽  
Ching-Yun Hung ◽  
Chi-Cheng Lin ◽  
...  
Keyword(s):  
Manganese Oxide ◽  
Large Area ◽  
Oxide Nanowires ◽  
Aspect Ratios ◽  
Pulse Deposition

scholarly journals The influence of technology and switching parameters on resistive switching behavior of Pt/HfO2/TiN MIM structures

2014 ◽  
Vol 27 (4) ◽  
pp. 621-630 ◽  
Author(s):  
Albena Paskaleva ◽  
Boris Hudec ◽  
Peter Jancovic ◽  
Karol Fröhlich ◽  
Dencho Spassov
Keyword(s):  
Resistive Switching ◽  
Deposition Process ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Conductive Filament ◽  
Metal Insulator ◽  
Dielectric Thickness ◽  
Metal Insulator Metal ◽  
Tin Metal ◽  
Mim Capacitors

Resistive switching (RS) effects in Pt/HfO2/TiN metal-insulator-metal (MIM) capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process, switching conditions and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100 switching cycles. RS effects are discussed in terms of different energy needed to dissociate O ions in structures with different TiN electrode treatment.

scholarly journals Enhanced Surface Properties of Light-Trapping Si Nanowires Using Synergetic Effects of Metal-Assisted and Anisotropic Chemical Etchings

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Youngsoon Jeong ◽  
Chanwoo Hong ◽  
Yeong Hun Jung ◽  
Rashida Akter ◽  
Hana Yoon ◽  
...  
Keyword(s):  
Interfacial Energy ◽  
Chemical Etching ◽  
Low Cost ◽  
Light Trapping ◽  
Si Nanowires ◽  
Si Substrate ◽  
Large Area ◽  
Aspect Ratios ◽  
Energy States ◽  
Si Nanostructures

Abstract Metal-assisted chemical etching (MACE) has been widely explored for developing silicon (Si)-based energy and optical devices with its benefits for low-cost and large-area fabrication of Si nanostructures of high aspect ratios. Surface structures and properties of Si nanostructures fabricated through MACE are significantly affected by experimental and environmental conditions of etchings. Herein, we showed that surfaces and interfacial energy states of fabricated Si nanowires can be critically affected by oxidants of MACE etching solutions. Surfaces of fabricated Si nanowires are porous and their tips are fully covered with lots of Si nano-sized grains. Strongly increased photoluminescence (PL) intensities, compared to that of the crystalline Si substrate, are observed for MACE-fabricated Si nanowires due to interfacial energy states of Si and SiOx of Si nano-sized grains. These Si grains can be completely removed from the nanowires by an additional etching process of the anisotropic chemical etching (ACE) of Si to taper the nanowires and enhance light trapping of the nanowires. Compared with the MACE-fabricated Si nanowires, ACE-fabricated tapered Si nanowires have similar Raman and PL spectra to those of the crystalline Si substrate, indicating the successful removal of Si grains from the nanowire surfaces by the ACE process.

scholarly journals Thermally assisted nanotransfer printing with sub–20-nm resolution and 8-inch wafer scalability

2020 ◽  
Vol 6 (31) ◽  
pp. eabb6462
Author(s):  
Tae Wan Park ◽  
Myunghwan Byun ◽  
Hyunsung Jung ◽  
Gyu Rac Lee ◽  
Jae Hong Park ◽  
...  
Keyword(s):  
Self Assembly ◽  
Transfer Printing ◽  
Combined Method ◽  
Large Area ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Good Pattern ◽  
Ordered Nanostructures ◽  
20 Nm ◽  
Pattern Resolution

Nanotransfer printing (nTP) has attracted considerable attention due to its good pattern resolution, process simplicity, and cost-effectiveness. However, the development of a large-area nTP process has been hampered by critical reliability issues related to the uniform replication and regular transfer printing of functional nanomaterials. Here, we present a very practical thermally assisted nanotransfer printing (T-nTP) process that can easily produce well-ordered nanostructures on an 8-inch wafer via the use of a heat-rolling press system that provides both uniform pressure and heat. We also demonstrate various complex pattern geometries, such as wave, square, nut, zigzag, and elliptical nanostructures, on diverse substrates via T-nTP. Furthermore, we demonstrate how to obtain a high-density crossbar metal-insulator-metal memristive array using a combined method of T-nTP and directed self-assembly. We expect that the state-of-the-art T-nTP process presented here combined with other emerging patterning techniques will be especially useful for the large-area nanofabrication of various devices.

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