A Tale of Two Precursors: UHV-CVD of TiO2 From Titanium Nitrate and Titanium Isopropoxide

1999 ◽  
Vol 567 ◽  
Author(s):  
Wayne L. Gladfelter ◽  
Charles J. Taylor ◽  
David C. Gilmer ◽  
Daniel G. Colombo ◽  
G. D. Wilk ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Reaction Rate ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Kinetic Regime ◽  
Chemical Vapor Deposition Reactor ◽  
Deposition Kinetics ◽  
Lower Activation ◽  
Low Pressures ◽  
Lower Activation Energy

ABSTRACTA side-by-side comparison of the TiO2 deposition kinetics and the corresponding film microstructures using titanium(IV) isopropoxide and anhydrous titanium(IV) nitrate was conducted at low pressures (< 10−4 Torr) in an ultrahigh vacuum chemical vapor deposition reactor. Titanium(IV) nitrate exhibited a lower activation energy of reaction (Er= 98 kJ/mol) which allowed deposition at lower temperatures compared to titanium(IV) isopropoxide (Er= 135 kJ/mol). Comparison of the microstructures of films deposited at similar temperatures revealed significant differences in the reaction rate limited kinetic regime. As the growth rates of the two precursors converged in the flux-limited regime, the respective microstructures became indistinguishable.

Gas products and carbon deposition kinetics in chemical vapor deposition from propylene

2010 ◽  
Vol 25 (1) ◽  
pp. 35-40 ◽  
Author(s):  
Cui-ying LU ◽  
Lai-fei CHENG ◽  
Li-tong ZHANG ◽  
Chun-nian ZHAO
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbon Deposition ◽  
Chemical Vapor ◽  
Deposition Kinetics ◽  
Gas Products

Achieving High Nucleation Density of Diamond Film Under Low Pressures in Hot-Filament Chemical Vapor Deposition

1994 ◽  
Vol 363 ◽  
Author(s):  
Yan Chen ◽  
Jun Mei ◽  
Qijin Chen ◽  
Zhangda Lin
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Heteroepitaxial Growth ◽  
Hot Filament ◽  
Low Pressures ◽  
Gaseous Source

AbstractDiamond have been deposited rapidly under low pressures (<0.1 Torr) via hot filament chemical vapor deposition (HFCVD) on either scratched or mirror-smooth single crystalline silicon and titanium with nucleation densities of 109–1011/cm2. The nucleation density increases with the pressure decreases. Hydrogen and methane were used as the gaseous source. Raman spectroscopy and scanning electron microscopy(SEM) were used to analyze the obtained films. This result breaks through the limit that diamond film can only be synthesized above 10 Torr, showing a promising prospect that, as is essential for heteroepitaxial growth of monocrystalline diamond films, diamond film can be easily nucleated on unscratched substrate via Hot Filament CVD.

Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Ultra High Vacuum

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

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