Temperature optimization in an azimuthally symmetric single‐wafer chemical vapor deposition reactor: The low pressure regime

1992 ◽  
Vol 10 (4) ◽  
pp. 843-849 ◽  
Author(s):  
David E. Kotecki ◽  
Steven G. Barbee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Chemical Vapor Deposition Reactor ◽  
Temperature Optimization ◽  
Pressure Regime

Combinatorial Chemical Vapor Deposition of Metal Silicate Films Using Tri(t -butoxy) silanol and Anhydrous Metal Nitrates

2003 ◽  
Vol 804 ◽  
Author(s):  
Lijuan Zhong ◽  
Fang Chen ◽  
Stephen A. Campbell ◽  
Wayne L. Gladfelter
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Rutherford Backscattering ◽  
Chemical Vapor Deposition Reactor ◽  
Metal Nitrates ◽  
Metal Silicate ◽  
Pressure Chemical

ABSTRACTA modified low-pressure chemical vapor deposition reactor was used to create compositional spreads of MO2/SiO2 films (M = Hf, Zr and Sn) using tri(t-butoxy) silanol and anhydrous metal nitrates of hafnium, zirconium and tin at temperatures below 250 °C. The compositional spreads formed by this process were characterized by ellipsometry and Rutherford backscattering spectrometry. A survey of possible reactions involved in the deposition is included.

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