Role of Film Hardness on the Polish Rates of Metal Thin Films

1999 ◽  
Vol 566 ◽  
Author(s):  
S. Ramarajana ◽  
Y. Li ◽  
M. Hariharaputhiran ◽  
Y.S. Her ◽  
S.V. Babu
Keyword(s):  
Thin Films ◽  
Chemical Mechanical Polishing ◽  
Indentation Depth ◽  
Mechanical Polishing ◽  
Ferric Nitrate ◽  
Silicon Substrates ◽  
Metal Thin Films ◽  
Cu Films ◽  
Film Hardness

Nanoindentation techniques were used to determine the hardness of Cu, Ta & W metal discs and thin films on silicon substrates as a function of load or indentation depth. Cu films exposed to oxidizing solutions containing H202 exhibited a higher hardness at the surface while no such change was observed for W exposed to ferric nitrate. The implication of these measurements and their relationship to chemical-mechanical polishing rates are discussed.

Chemical Mechanical Polishing of Al and SiO2 Thin Films: The Role of Consumables

1999 ◽  
Vol 146 (12) ◽  
pp. 4647-4653 ◽  
Author(s):  
J. Hernandez ◽  
P. Wrschka ◽  
Y. Hsu ◽  
T. ‐S. Kuan ◽  
G. S. Oehrlein ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing

Surface Layer Formation During the Chemical Mechanical Polishing of Copper Thin Films

1994 ◽  
Vol 337 ◽  
Author(s):  
J.M. Steigerwald ◽  
S.P. Murarka ◽  
D.J. Duquette ◽  
R.J. Gutmann
Keyword(s):  
Thin Films ◽  
Corrosion Resistance ◽  
Surface Layer ◽  
Chemical Mechanical Polishing ◽  
Chemical Processes ◽  
Mechanical Polishing ◽  
Layer Formation ◽  
Surface Layer Formation ◽  
Polish Rate

ABSTRACTThree chemical processes that occur during the chemical mechanical polishing (CMP) of copper are described in terms of their effect on surface planarity, polish rate, and corrosion resistance of the polished copper. These processes are surface layer formation, dissolution of mechanically abraded copper, and chemical acceleration of the polish rate. The role of these processes is demonstrated with two slurry formulations used in the CMP of copper at Rensselaer.

scholarly journals Nanoindentation of Au and Pt/Cu thin films at elevated temperatures

2004 ◽  
Vol 19 (9) ◽  
pp. 2650-2657 ◽  
Author(s):  
Alex A. Volinsky ◽  
Neville R. Moody ◽  
William W. Gerberich
Keyword(s):  
Thin Films ◽  
Elastic Modulus ◽  
Yield Stress ◽  
Elevated Temperatures ◽  
Nanocrystalline Structure ◽  
Cu Films ◽  
Interfacial Toughness ◽  
Film Hardness ◽  
Cu Film ◽  
Sputter Deposited

This paper describes the nanoindentation technique for measuring sputter-deposited Au and Cu thin films’ mechanical properties at elevated temperatures up to 130 °C. A thin, 5-nm Pt layer was deposited onto the Cu film to prevent its oxidation during testing. Nanoindentation was then used to measure elastic modulus and hardness as a function of temperature. These tests showed that elastic modulus and hardness decreased as the test temperature increased from 20 to 130 °C. Cu films exhibited higher hardness values compared to Au, a finding that is explained by the nanocrystalline structure of the film. Hardness was converted to the yield stress using both the Tabor relationship and the inverse method (based on the Johnson cavity model). The thermal component of the yield-stress dependence followed a second-order polynomial in the temperature range tested for Au and Pt/Cu films. The decrease in yield stress at elevated temperatures accounts for the increased interfacial toughness of Cu thin films.

Electrical and Optical Properties of LiNbO3/CaCu3Ti4O12 Heterostructures on Si

2015 ◽  
Vol 1805 ◽  
Author(s):  
Javad R. Gatabi ◽  
Kevin A. Lyon ◽  
Shafiqur Rahman ◽  
Hanu Arava ◽  
Juan S Rojas-Ramirez ◽  
...  
Keyword(s):  
Thin Films ◽  
Cost Effective ◽  
Deposition Process ◽  
Structural Quality ◽  
Silicon Substrates ◽  
Solution Deposition ◽  
Effective Spin ◽  
Capacitance Variation ◽  
Crystallization Conditions

ABSTRACTThe role of ferroelectric LiNbO3 (LNB) in altering the frequency dependence of the capacitance of CaCu3Ti4O12 (CCTO) thin films has been investigated. A cost effective spin coating deposition process was used to integrate the oxide heterostructures onto silicon substrates. This study showed that the frequency stability of the CCTO/LNB structure was much improved when the crystallization conditions and physical dimension of each layer were optimized. To integrate this structure with current silicon technology, heterostructures of CCTO and LNB thin films were fabricated on HF terminated Si using chemical solution deposition. It was found that the order of deposition of the two layers was important for the structural quality of the heterostructures with the CCTO layer followed by the LNB layer being the preferred structure. In addition to improvement of the capacitance variation with frequency, the heterostructures also provide a path to tuning the frequency of operation.

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