Surface Layer Formation During the Chemical Mechanical Polishing of Copper Thin Films

1994 ◽  
Vol 337 ◽  
Author(s):  
J.M. Steigerwald ◽  
S.P. Murarka ◽  
D.J. Duquette ◽  
R.J. Gutmann
Keyword(s):  
Thin Films ◽  
Corrosion Resistance ◽  
Surface Layer ◽  
Chemical Mechanical Polishing ◽  
Chemical Processes ◽  
Mechanical Polishing ◽  
Layer Formation ◽  
Surface Layer Formation ◽  
Polish Rate

ABSTRACTThree chemical processes that occur during the chemical mechanical polishing (CMP) of copper are described in terms of their effect on surface planarity, polish rate, and corrosion resistance of the polished copper. These processes are surface layer formation, dissolution of mechanically abraded copper, and chemical acceleration of the polish rate. The role of these processes is demonstrated with two slurry formulations used in the CMP of copper at Rensselaer.

Chemical Mechanical Polishing of Al and SiO2 Thin Films: The Role of Consumables

1999 ◽  
Vol 146 (12) ◽  
pp. 4647-4653 ◽  
Author(s):  
J. Hernandez ◽  
P. Wrschka ◽  
Y. Hsu ◽  
T. ‐S. Kuan ◽  
G. S. Oehrlein ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing

Role of Film Hardness on the Polish Rates of Metal Thin Films

1999 ◽  
Vol 566 ◽  
Author(s):  
S. Ramarajana ◽  
Y. Li ◽  
M. Hariharaputhiran ◽  
Y.S. Her ◽  
S.V. Babu
Keyword(s):  
Thin Films ◽  
Chemical Mechanical Polishing ◽  
Indentation Depth ◽  
Mechanical Polishing ◽  
Ferric Nitrate ◽  
Silicon Substrates ◽  
Metal Thin Films ◽  
Cu Films ◽  
Film Hardness

Nanoindentation techniques were used to determine the hardness of Cu, Ta & W metal discs and thin films on silicon substrates as a function of load or indentation depth. Cu films exposed to oxidizing solutions containing H202 exhibited a higher hardness at the surface while no such change was observed for W exposed to ferric nitrate. The implication of these measurements and their relationship to chemical-mechanical polishing rates are discussed.

Investigation of in-vitro bacterial surface layer formation by FBARs

2009 ◽  
Author(s):  
Michael Mertig ◽  
Anja Bluher ◽  
Christiane Erler ◽  
Beate Katzschner ◽  
Wolfgang Pompe ◽  
...  
Keyword(s):  
Surface Layer ◽  
Layer Formation ◽  
Bacterial Surface ◽  
Surface Layer Formation

Role of Surface Band Gap Widening in Cu(In, Ga)(Se, S)2 Thin-Films for the Photovoltaic Performance of ZnO/CdS/Cu(In, Ga)(Se, S)2 Heterojunction Solar Cells

2003 ◽  
Vol 763 ◽  
Author(s):  
U. Rau ◽  
M. Turcu
Keyword(s):  
Thin Films ◽  
Surface Layer ◽  
Solar Cells ◽  
Fermi Level ◽  
Band Gap ◽  
Photovoltaic Performance ◽  
Heterojunction Solar Cells ◽  
Fermi Level Pinning ◽  
Device Efficiency

AbstractNumerical simulations are used to investigate the role of the Cu-poor surface defect layer on Cu(In, Ga)Se2 thin-films for the photovoltaic performance of ZnO/CdS/Cu(In, Ga)Se2 heterojunction solar cells. We model the surface layer either as a material which is n-type doped, or as a material which is type-inverted due to Fermi-level pinning by donor-like defects at the interface with CdS. We further assume a band gap widening of this layer with respect to the Cu(In, Ga)Se2 bulk. This feature turns out to represent the key quality of the Cu(In, Ga)Se2 surface as it prevents recombination at the absorber/CdS buffer interface. Whether the type inversion results from n-type doping or from Fermi-level pinning is only of minor importance as long as the surface layer does not imply a too large number of excess defects in its bulk or at its interface with the normal absorber. With increasing number of those defects an n-type layer proofs to be less sensitive to material deterioration when compared to the type-inversion by Fermi-level pinning. For wide gap chalcopyrite solar cells the internal valence band offset between the surface layer and the chalcopyrite appears equally vital for the device efficiency. However, the unfavorable band-offsets of the ZnO/CdS/Cu(In, Ga)Se2 heterojunction limit the device efficiency because of the deterioration of the fill factor.

An Analysis of Hydroxyapatite Surface Layer Formation

1999 ◽  
Vol 103 (10) ◽  
pp. 1671-1675 ◽  
Author(s):  
P. W. Brown ◽  
R. I. Martin
Keyword(s):  
Surface Layer ◽  
Layer Formation ◽  
Surface Layer Formation

Improvement of Surface Layer Formation Technology for Articles Produced by Layer-by-Layer Laser Sintering

2013 ◽  
Vol 379 ◽  
pp. 56-59 ◽  
Author(s):  
N.A. Saprykina ◽  
A.A. Saprykin
Keyword(s):  
Surface Layer ◽  
Powder Material ◽  
Copper Powder ◽  
Manufacturing Process ◽  
Laser Sintering ◽  
Layer By Layer ◽  
Layer Formation ◽  
Mathematical Relation ◽  
Surface Layer Formation

Mathematical relation between roughness of the surface layer of the sintered article and layer-by-layer laser sintering modes obtained from experiments conducted using copper powder material PMS-1. Authors suggest that split manufacturing process of an article and its inner part must be split to roughing, semi-finishing and finishing modes.

scholarly journals Management of space orientation of the end effector of generation of geometry system fiveaxis manufacturing machinery for additive generation of geometry

2018 ◽  
Vol 226 ◽  
pp. 01004 ◽  
Author(s):  
Alexander N. Grechukhin ◽  
Ivan S. Anikutin ◽  
Alexander S. Byshkin
Keyword(s):  
Surface Layer ◽  
Spatial Orientation ◽  
Process Equipment ◽  
Layer Formation ◽  
Mechatronic System ◽  
End Effector ◽  
Advantages And Disadvantages ◽  
Working Element ◽  
Additive Methods ◽  
Surface Layer Formation

The article is devoted to the investigation of the surface layer formation accuracy of engineering products by additive methods. The analysis of advantages and disadvantages of layered products synthesis technologies was carried out. It was revealed that, in additive shaping, the exact characteristics of the surface layer differ significantly from the accuracy characteristics of the surface layer of products obtained by the traditional methods. The analysis of domestic and foreign works on the topic of research was carried out. It is revealed that to increase the accuracy characteristics of products obtained by additive methods, it is necessary to realize dynamically the spatial orientation of the working element of the additive installation in the process of shaping. To control the spatial orientation of the working organ of additive equipment, a method is proposed. According to the proposed method, the controlled parameters of the additive installation are calculated on the basis of a 5- coordinate mechatronic system. The proposed methodology will allow to calculate the controlled parameters of the process equipment, to provide the required orientation of the working element of the additive installation to reduce the error of shaping (approximation), using 5-coordinate mechatronic system

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