Chemical Mechanical Polishing of Al and SiO2 Thin Films: The Role of Consumables

1999 ◽  
Vol 146 (12) ◽  
pp. 4647-4653 ◽  
Author(s):  
J. Hernandez ◽  
P. Wrschka ◽  
Y. Hsu ◽  
T. ‐S. Kuan ◽  
G. S. Oehrlein ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing

Role of Film Hardness on the Polish Rates of Metal Thin Films

1999 ◽  
Vol 566 ◽  
Author(s):  
S. Ramarajana ◽  
Y. Li ◽  
M. Hariharaputhiran ◽  
Y.S. Her ◽  
S.V. Babu
Keyword(s):  
Thin Films ◽  
Chemical Mechanical Polishing ◽  
Indentation Depth ◽  
Mechanical Polishing ◽  
Ferric Nitrate ◽  
Silicon Substrates ◽  
Metal Thin Films ◽  
Cu Films ◽  
Film Hardness

Nanoindentation techniques were used to determine the hardness of Cu, Ta & W metal discs and thin films on silicon substrates as a function of load or indentation depth. Cu films exposed to oxidizing solutions containing H202 exhibited a higher hardness at the surface while no such change was observed for W exposed to ferric nitrate. The implication of these measurements and their relationship to chemical-mechanical polishing rates are discussed.

Surface Layer Formation During the Chemical Mechanical Polishing of Copper Thin Films

1994 ◽  
Vol 337 ◽  
Author(s):  
J.M. Steigerwald ◽  
S.P. Murarka ◽  
D.J. Duquette ◽  
R.J. Gutmann
Keyword(s):  
Thin Films ◽  
Corrosion Resistance ◽  
Surface Layer ◽  
Chemical Mechanical Polishing ◽  
Chemical Processes ◽  
Mechanical Polishing ◽  
Layer Formation ◽  
Surface Layer Formation ◽  
Polish Rate

ABSTRACTThree chemical processes that occur during the chemical mechanical polishing (CMP) of copper are described in terms of their effect on surface planarity, polish rate, and corrosion resistance of the polished copper. These processes are surface layer formation, dissolution of mechanically abraded copper, and chemical acceleration of the polish rate. The role of these processes is demonstrated with two slurry formulations used in the CMP of copper at Rensselaer.

ChemInform Abstract: Present and Future Role of Chemical Mechanical Polishing in Wafer Bonding

ChemInform ◽  
2010 ◽  
Vol 29 (31) ◽  
pp. no-no
Author(s):  
C. GUI ◽  
M. ELWENSPOEK ◽  
J. G. E. GARDENIERS ◽  
P. V. LAMBECK
Keyword(s):  
Wafer Bonding ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Future Role

Chemical mechanical polishing of PZT thin films for FRAM applications

2006 ◽  
Vol 83 (11-12) ◽  
pp. 2238-2242 ◽  
Author(s):  
Yong-Jin Seo ◽  
Jin-Seong Park ◽  
Woo-Sun Lee
Keyword(s):  
Thin Films ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Pzt Thin Films
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