Mechanisms for Microstructure Evolution in Electroplated Copper Thin Films

1999 ◽  
Vol 564 ◽  
Author(s):  
J. M. E. Harper ◽  
C. Cabral ◽  
P. C. Andricacos ◽  
L. Gignac ◽  
I. C. Noyan ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Grain Boundary ◽  
Electron Scattering ◽  
Microstructure Evolution ◽  
Room Temperature ◽  
Tensile Direction ◽  
Transient Period ◽  
Grain Boundary Pinning ◽  
Electroplated Copper

AbstractWe present a model which accounts for the dramatic evolution in the microstructure of electroplated copper thin films near room temperature. Microstructure evolution occurs during a transient period of hours following deposition, and includes an increase in grain size, changes in preferred crystallographic texture, and decreases in resistivity, hardness and compressive stress. As the grain size increases from the as-deposited value of 0.05–0.1 μm up to several μm, the decreasing grain boundary contribution to electron scattering lowers the resistivity by tens of percent to near-bulk values. Concurrently, as the volume of grain boundaries decreases, the stress is shown to change in the tensile direction by tens of MPa. The as-deposited grain size is also shown to be consistent with grain boundary pinning.

Mechanisms for Microstructure Evolution in Electroplated Copper Thin Films

1999 ◽  
Vol 562 ◽  
Author(s):  
J. M. E. Harper ◽  
C. Cabral ◽  
P. C. Andricacos ◽  
L. Gignac ◽  
I. C. Noyan ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Grain Boundary ◽  
Electron Scattering ◽  
Microstructure Evolution ◽  
Room Temperature ◽  
Tensile Direction ◽  
Transient Period ◽  
Grain Boundary Pinning ◽  
Electroplated Copper

ABSTRACTWe present a model which accounts for the dramatic evolution in the microstructure of electroplated copper thin films near room temperature. Microstructure evolution occurs during a transient period of hours following deposition, and includes an increase in grain size, changes in preferred crystallographic texture, and decreases in resistivity, hardness and compressive stress. As the grain size increases from the as-deposited value of 0.05–0.1 μm up to several μm, the decreasing grain boundary contribution to electron scattering lowers the resistivity by tens of percent to near-bulk values. Concurrently, as the volume of grain boundaries decreases, the stress is shown to change in the tensile direction by tens of MPa. The as-deposited grain size is also shown to be consistent with grain boundary pinning.

Mechanisms for microstructure evolution in electroplated copper thin films near room temperature

1999 ◽  
Vol 86 (5) ◽  
pp. 2516-2525 ◽  
Author(s):  
J. M. E. Harper ◽  
C. Cabral ◽  
P. C. Andricacos ◽  
L. Gignac ◽  
I. C. Noyan ◽  
...  
Keyword(s):  
Thin Films ◽  
Microstructure Evolution ◽  
Room Temperature ◽  
Electroplated Copper

Mechanical Properties of Electroplated Copper Thin Films

1999 ◽  
Vol 594 ◽  
Author(s):  
R. Spolenak ◽  
C. A. Volkert ◽  
K. Takahashi ◽  
S. Fiorillo ◽  
J. Miner ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Grain Size ◽  
Film Thickness ◽  
Yield Stress ◽  
Laser Scanning ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Cu Films ◽  
Electroplated Copper

AbstractIt is well known that the mechanical properties of thin films depend critically on film thickness However, the contributions from film thickness and grain size are difficult to separate, because they typically scale with each other. In one study by Venkatraman and Bravman, Al films, which were thinned using anodic oxidation to reduce film thickness without changing grain size, showed a clear increase in yield stress with decreasing film thickness.We have performed a similar study on both electroplated and sputtered Cu films by using chemical-mechanical polishing (CMP) to reduce the film thickness without changing the grain size. Stress-temperature curves were measured for both the electroplated and sputtered Cu films with thicknesses between 0.1 and 1.8 microns using a laser scanning wafer curvature technique. The yield stress at room temperature was found to increase with decreasing film thickness for both sets of samples. The sputtered films, however, showed higher yield stresses in comparison to the electroplated films. Most of these differences can be attributed to the different microstructures of the films, which were determined by focused ion beam (FIB) microscopy and x-ray diffraction.

Microstructure Evolution and Grain Boundary Characteristics of Oriented Silicon Steel during Primary Recrystallization in a Pulsed Magnetic Field

2013 ◽  
Vol 690-693 ◽  
pp. 139-146 ◽  
Author(s):  
Li Hua Liu ◽  
Li Juan Li ◽  
Qi Jie Zhai
Keyword(s):  
Magnetic Field ◽  
Grain Size ◽  
Magnetic Fields ◽  
Grain Boundary ◽  
Microstructure Evolution ◽  
Silicon Steel ◽  
Pulsed Magnetic Field ◽  
Magnetic Annealing ◽  
Grain Boundary Characteristics ◽  
Boundary Characteristics

The effects of a 2 T pulsed magnetic field primary annealing process on microstructure evolution and grain boundary characteristics in two-stage cold-rolled silicon steel were examined. Pulsed magnetic annealing increased grain size through the application of relatively smaller intensity of magnetic fields (2 T), compared to steady magnetic annealing. The effect of increasing grain size may be attributed to the magnetic acceleration effect of boundary motion under magnetic pulse conditions. Pulsed magnetic annealing may serve to enhance the relative intensity of the {111} component and decrease the frequency of low-angle misorientations. Repeated magnetostriction induced by pulsed magnetic field applications may accelerate overall dislocation motion. These findings suggest that pulsed magnetic fields require relatively lower intensities than steady magnetic fields to achieve superior results, providing a potentially viable alternative for industrial annealing processes for electrical steels.

Grain boundary defects induced room temperature ferromagnetism in V doped ZnO thin films

2011 ◽  
Vol 46 (12) ◽  
pp. 1257-1264 ◽  
Author(s):  
G. Jayalakshmi ◽  
N. Gopalakrishnan ◽  
B. K. Panigrahi ◽  
T. Balasubramanian
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Thin Films ◽  
Doped Zno
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