Field Emission from Carbon Films Deposited by VHF CVD on Different Substrates

1999 ◽  
Vol 558 ◽  
Author(s):  
A.I. Kosarev ◽  
A.S. Abramov ◽  
A.J. Vinogradov ◽  
M.V. Shutov ◽  
T.E. Felter ◽  
...  
Keyword(s):  
Work Function ◽  
Field Emission ◽  
Low Temperatures ◽  
Carbon Films ◽  
Emission Characteristics ◽  
Back Contact ◽  
Contact Material ◽  
Si Substrates

ABSTRACTAs previously demonstrated, non-diamond carbon (NDC) films deposited at low temperatures 200-300 °C on silicon tips reduced the threshold of field emission. In this paper we will present the results of the study of field emission from flat NDC films prepared by VHF CVD. Emission measurements were performed in a diode configuration at approximately 10−10 Torr. NDC films were deposited on ceramic and on c-Si substrates sputter coated with layers of Ti, Cu, Ni and Pt. The back contact material influences the emission characteristics but not as a direct correlation to work function. A model of field emission from metal-NDC film structures will be discussed.

Field Emission From Tetrahedrally Bonded Amorphous Carbon as a Function of Surface Treatment and Contact Material

1997 ◽  
Vol 498 ◽  
Author(s):  
W. I. Milne ◽  
J. Robertson ◽  
B. S. Satyanarayana ◽  
A. Hart ◽  
B. Kleinsorge
Keyword(s):  
Work Function ◽  
Field Emission ◽  
Native Oxide ◽  
Vacuum Arc ◽  
Back Contact ◽  
Contact Material ◽  
Type C ◽  
Filtered Cathodic Vacuum Arc ◽  
P Type ◽  
Tetrahedrally Bonded

ABSTRACTIn order to test whether field emission from tetrahedrally bonded amorphous (ta-C) is affected by the back contact material we have carried out a series of emission experiments on Filtered Cathodic Vacuum Arc (FCVA) produced ta-C films. The measurements were made on identical films of approximately 25 nm thickness which have been grown simultaneously on various substrates of different work function. For these experiments the substrates used were p-type c-Si, n-type c-Si, SnO2, tungsten, gold, lead, aluminium, molybdenum, chromium and titanium. Threshold fields for emission were generally in the range of 5–15 V/micron and showed no direct dependence on back contact material work function. Films grown on Ti and W however had much higher threshold fields in the range 30–35 V/micron and this is thought to be associated with the native oxide which was present between the back contact and the ta-C film. As grown ta-C is also known to have a 1–2 nm thick sp2 rich layer on its surface and this layer may also have some effect on field emission. The layer was etched in either an O2 or H2 plasma and both etched surfaces led to improved emission efficiency.

Effect of nanostructure and back contact material on the field emission properties of carbon films

2002 ◽  
Vol 11 (3-6) ◽  
pp. 819-823 ◽  
Author(s):  
M.C. Rossi ◽  
S. Salvatori ◽  
P. Ascarelli ◽  
E. Cappelli ◽  
S. Orlando
Keyword(s):  
Field Emission ◽  
Carbon Films ◽  
Back Contact ◽  
Contact Material ◽  
Emission Properties ◽  
Field Emission Properties

Stable Emission Characteristics of Low Work Function Amorphous Carbon Coated Transfer Mold Nickel Field Emitter Arrays in Harsh Environment

2011 ◽  
Vol 222 ◽  
pp. 138-141
Author(s):  
Masayuki Nakamoto ◽  
Jong Hyun Moon
Keyword(s):  
Work Function ◽  
Field Emission ◽  
Amorphous Carbon ◽  
Oxygen Radical ◽  
Harsh Environments ◽  
Satellite Orbits ◽  
Emission Characteristics ◽  
Field Emitter ◽  
Radical Treatment ◽  
Field Emitter Arrays

Low work function amorphous carbon Transfer Mold field emitter arrays (a-C-FEAs) have been fabricated by combining the Transfer Mold emitter fabrication method and the emitter material coating method to realize stable vacuum nanoelectronic devices in harsh environments of aerospace. The emitter tips of a-C-FEAs are extremely sharpened to 26.7-30.7 nm of tip radii. Work function of a-C-FEAs was as low as 3.6 eV compared with those of conventional emitter materials such as carbon nanotube of 5.0 eV. Oxygen radical flux intensity of 1015 atoms/cm2•sec was used for the evaluation of field emission characteristics, whose value is 107-108 times higher than those of 107-108 atoms/cm2•sec in aerospace of satellite orbits. As the oxygen radical treatment time increased, turn-on fields of Ni-FEAs exhibited the 2.2 times degradation from 14.9 V/µm to 32.7 V/µm. Those of a-C-FEAs have been keeping almost the same value of 20.8-23.7 V/µm after oxygen radical treatment. The a-C-FEAs exhibit stable field emission characteristics in harsh environments.

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