Field emission characteristics of CuO nanowires grown on brown-oxide-coated Cu films on Si substrates by conductive heating in air

Author(s):  
Soon-Chang Yeon ◽  
Woo-Yong Sung ◽  
Wal-Jun Kim ◽  
Seung-Min Lee ◽  
Ho-Young Lee ◽  
...  
1999 ◽  
Vol 558 ◽  
Author(s):  
A.I. Kosarev ◽  
A.S. Abramov ◽  
A.J. Vinogradov ◽  
M.V. Shutov ◽  
T.E. Felter ◽  
...  

ABSTRACTAs previously demonstrated, non-diamond carbon (NDC) films deposited at low temperatures 200-300 °C on silicon tips reduced the threshold of field emission. In this paper we will present the results of the study of field emission from flat NDC films prepared by VHF CVD. Emission measurements were performed in a diode configuration at approximately 10−10 Torr. NDC films were deposited on ceramic and on c-Si substrates sputter coated with layers of Ti, Cu, Ni and Pt. The back contact material influences the emission characteristics but not as a direct correlation to work function. A model of field emission from metal-NDC film structures will be discussed.


Vacuum ◽  
2007 ◽  
Vol 81 (7) ◽  
pp. 851-856 ◽  
Author(s):  
Woo-Yong Sung ◽  
Wal-Jun Kim ◽  
Seung-Min Lee ◽  
Ho-Young Lee ◽  
Yong-Hyup Kim ◽  
...  

2001 ◽  
Vol 89 (12) ◽  
pp. 8253-8258 ◽  
Author(s):  
Kenji Hirakuri ◽  
Takahiro Yokoyama ◽  
Hirofumi Enomoto ◽  
Nobuki Mutsukura ◽  
Gernot Friedbacher

2012 ◽  
Vol 19 (02) ◽  
pp. 1250011 ◽  
Author(s):  
ENLING LI ◽  
TAO ZHAO ◽  
DANNA ZHAO ◽  
ZHEN CUI ◽  
MANCANG LIU

The chemical vapor deposition (CVD) process has been used to synthesize gallium nitride (GaN) nanostructures using Pt -coated n-type Si (100) as the substrate, and NH 3 gas and Ga 2 O 3 powder as the reaction agents. The surface morphologies of the prepared GaN nanostructures obtained by field emission scanning electron microscopy (FE-SEM) show a large number of GaN nanowires and nanorods on the Si substrates. The synthesized nanostructures are hexagonal as determined from XRD analysis and show a turn-on field of 5 v/μm at 10 μA/cm2.


2011 ◽  
Vol 49 (4) ◽  
pp. 342-347
Author(s):  
Kyoungwan Park ◽  
Seungman An ◽  
Taekyung Yim ◽  
Kyungsu Lee ◽  
Jeongho Kim ◽  
...  

2008 ◽  
Vol 403 (10-11) ◽  
pp. 1793-1796 ◽  
Author(s):  
Wenhui Lu ◽  
Hang Song ◽  
Yixin Jin ◽  
Hui Zhao ◽  
Haifeng Zhao ◽  
...  

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