Ultrafast Silicon Based Internal Photoemission Detectors

1999 ◽  
Vol 558 ◽  
Author(s):  
M. Löken ◽  
Th. Lipinsky ◽  
L. Kappius ◽  
S. Mantl ◽  
Ch. Buchal
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Laser Pulses ◽  
Schottky Contacts ◽  
Infrared Light ◽  
Internal Photoemission ◽  
Long Wavelength ◽  
Fs Laser ◽  
Infrared Wavelengths ◽  
Silicon Based

ABSTRACTWe have studied different metal-silicon-metal (MSM) Schottky barrier photodiodes for the detection of visible and infrared light. We investigated the different Schottky barriers from Ti, Cr and Pt. At infrared wavelengths, the Schottky contacts provide electrons and holes by “internal photoemission” into the Si. The lowest Schottky barrier determines the long wavelength cutoff and the current noise. The temporal response was measured byultrashort (100 fs) laser pulses from a Ti:A1203 laser, which were converted by an optical parametric oscillator to a wavelength of 1.1 to 1.6 μm. The measurements were performed between 30 K and room temperature. The best detectors show a pulse width of 3.2ps FWHM at 1.25 μm wavelength and room temperature. To our knowledge this is the fastest infrared response for silicon based diodes ever reported.

scholarly journals Femtosecond-Laser Nanostructuring of Black Diamond Films under Different Gas Environments

Materials ◽  
2020 ◽  
Vol 13 (24) ◽  
pp. 5761
Author(s):  
Marco Girolami ◽  
Alessandro Bellucci ◽  
Matteo Mastellone ◽  
Stefano Orlando ◽  
Valerio Serpente ◽  
...  
Keyword(s):  
Optical Properties ◽  
High Vacuum ◽  
Diamond Films ◽  
Cost Effective ◽  
Laser Pulses ◽  
Ultra High Vacuum ◽  
Infrared Light ◽  
Ambient Conditions ◽  
Combined Use ◽  
Fs Laser

Irradiation of diamond with femtosecond (fs) laser pulses in ultra-high vacuum (UHV) conditions results in the formation of surface periodic nanostructures able to strongly interact with visible and infrared light. As a result, native transparent diamond turns into a completely different material, namely “black” diamond, with outstanding absorptance properties in the solar radiation wavelength range, which can be efficiently exploited in innovative solar energy converters. Of course, even if extremely effective, the use of UHV strongly complicates the fabrication process. In this work, in order to pave the way to an easier and more cost-effective manufacturing workflow of black diamond, we demonstrate that it is possible to ensure the same optical properties as those of UHV-fabricated films by performing an fs-laser nanostructuring at ambient conditions (i.e., room temperature and atmospheric pressure) under a constant He flow, as inferred from the combined use of scanning electron microscopy, Raman spectroscopy, and spectrophotometry analysis. Conversely, if the laser treatment is performed under a compressed air flow, or a N2 flow, the optical properties of black diamond films are not comparable to those of their UHV-fabricated counterparts.

Formation of Silicon and Silicon-Based Semiconductor Materials via Photoinduced Reaction Using Femtosecond Laser

2011 ◽  
Vol 1288 ◽  
Author(s):  
Masakazu Nishimura ◽  
Shingo Kanehira ◽  
Masaaki Sakakura ◽  
Yasuhiko Shimotsuma ◽  
Kiyotaka Miura ◽  
...  
Keyword(s):  
Particle Size ◽  
Phase Transformation ◽  
Femtosecond Laser ◽  
Laser Irradiation ◽  
Sandwich Structure ◽  
Laser Pulses ◽  
Semiconductor Materials ◽  
Photoinduced Reaction ◽  
Fs Laser ◽  
Silicon Based

ABSTRACTWe have succeeded in silicon (Si) precipitation inside a glass/aluminum (Al) sandwich structure via photoinduced reaction using femtosecond (fs) laser irradiation. The sandwich structure was fabricated by direct bonding below 573 K. Raman spectra at the photomodified area indicated that Si crystals formed at the interface between the glass and metallic Al after the laser irradiation. In addition, the particle size of the precipitated Si could be changed by changing the pulse energy of the laser. Furthermore, we have also focused the laser pulses on Fe-Si film to trigger crystallization and phase transformation of FexSiy at the interface between Fe/Si multilayer and glass.

scholarly journals Laser-induced thermal grating spectroscopy based on femtosecond laser multi-photon absorption

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Maria Ruchkina ◽  
Dina Hot ◽  
Pengji Ding ◽  
Ali Hosseinnia ◽  
Per-Erik Bengtsson ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Laser Pulses ◽  
Photon Absorption ◽  
Gas Flows ◽  
Single Shot ◽  
Photon Excitation ◽  
Fs Laser ◽  
Thermal Grating ◽  
Grating Spectroscopy ◽  
First Time

AbstractLaser-induced grating spectroscopy (LIGS) is for the first time explored in a configuration based on the crossing of two focused femtosecond (fs) laser pulses (800-nm wavelength) and a focused continuous-wave (cw) laser beam (532-nm wavelength). A thermal grating was formed by multi-photon absorption of the fs-laser pulses by $$\hbox {N}_{{2}}$$ N 2 with a pulse energy around 700 $$\upmu $$ μ J ($$\sim $$ ∼ 45 TW/$$\hbox {cm}^{2}$$ cm 2 ). The feasibility of this LIGS configuration was investigated for thermometry in heated nitrogen gas flows. The temperature was varied from room temperature up to 750 K, producing strong single-shot LIGS signals. A model based on the solution of the linearized hydrodynamic equations was used to extract temperature information from single-shot experimental data, and the results show excellent agreement with the thermocouple measurements. Furthermore, the fluorescence produced by the fs-laser pulses was investigated. This study indicates an 8-photon absorption pathway for $$\hbox {N}_{{2}}$$ N 2 in order to reach the $$\hbox {B}^{3}\Pi _{g}$$ B 3 Π g state from the ground state, and 8 + 5 photon excitation to reach the $$\hbox {B}^{2}\Sigma _{u}^{+}$$ B 2 Σ u + state of the $$\hbox {N}_{2}^{+}$$ N 2 + ion. At pulse energies higher than 1 mJ, the LIGS signal was disturbed due to the generation of plasma. Additionally, measurements in argon gas and air were performed, where the LIGS signal for argon shows lower intensity compared to air and $$\hbox {N}_{{2}}$$ N 2 .

scholarly journals Dual-shot dynamics and ultimate frequency of all-optical magnetic recording on GdFeCo

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Sicong Wang ◽  
Chen Wei ◽  
Yuanhua Feng ◽  
Hongkun Cao ◽  
Wenzhe Li ◽  
...  
Keyword(s):  
Magnetization Reversal ◽  
Energy Efficient ◽  
High Speed ◽  
Data Transfer ◽  
Laser Pulses ◽  
Time Resolved ◽  
All Optical ◽  
Fs Laser ◽  
High Speed Data ◽  
Natural Way

AbstractAlthough photonics presents the fastest and most energy-efficient method of data transfer, magnetism still offers the cheapest and most natural way to store data. The ultrafast and energy-efficient optical control of magnetism is presently a missing technological link that prevents us from reaching the next evolution in information processing. The discovery of all-optical magnetization reversal in GdFeCo with the help of 100 fs laser pulses has further aroused intense interest in this compelling problem. Although the applicability of this approach to high-speed data processing depends vitally on the maximum repetition rate of the switching, the latter remains virtually unknown. Here we experimentally unveil the ultimate frequency of repetitive all-optical magnetization reversal through time-resolved studies of the dual-shot magnetization dynamics in Gd27Fe63.87Co9.13. Varying the intensities of the shots and the shot-to-shot separation, we reveal the conditions for ultrafast writing and the fastest possible restoration of magnetic bits. It is shown that although magnetic writing launched by the first shot is completed after 100 ps, a reliable rewriting of the bit by the second shot requires separating the shots by at least 300 ps. Using two shots partially overlapping in space and minimally separated by 300 ps, we demonstrate an approach for GHz magnetic writing that can be scaled down to sizes below the diffraction limit.

Ultrafast Laser Cleaning of Daguerreotypes

2011 ◽  
Vol 1319 ◽  
Author(s):  
Michael J. Abere ◽  
Ryan D. Murphy ◽  
Bianca Jackson ◽  
Gerard Mourou ◽  
Michel Menu ◽  
...  
Keyword(s):  
Material Removal ◽  
Silver Oxide ◽  
Laser Pulses ◽  
Silver Sulfide ◽  
Ultrafast Laser ◽  
Beam Diameter ◽  
Chemical Cleaning ◽  
Silver Substrate ◽  
Fs Laser ◽  
Lower Material

ABSTRACTAn ultrafast laser irradiation method for the removal of corrosion from Daguerreotypes without detrimentally affecting image quality has been developed. Corrosion products such as silver oxide and silver sulfide may be removed by chemical cleaning but these reactions are hard to control and are often damaging to the underlying silver, ruining the image. The Ti:Sapphire 150 fs laser pulses used in this study are focused to a beam diameter of 60 μm and are normally incident to the Daguerreotype. It was found that the corrosion layer has a lower material removal threshold than silver allowing for removal of corrosion with minimal removal of vital information contained in the silver substrate.

Fabrication and Characterization of Si Nano-Columns by Femtosecond Laser

2012 ◽  
Vol 16 ◽  
pp. 15-20 ◽  
Author(s):  
Omid Tayefeh Ghalehbeygi ◽  
Vural Kara ◽  
Levent Trabzon ◽  
Selcuk Akturk ◽  
Huseyin Kizil
Keyword(s):  
Laser Ablation ◽  
Femtosecond Laser ◽  
Laser Beam ◽  
Chemical Etching ◽  
Silicon Surface ◽  
Laser Pulses ◽  
Laser Beam Profile ◽  
Fs Laser ◽  
Fabrication And Characterization

We fabricated Si Nano-columns by a femtosecond laser with various wavelengths and process parameters, whilst the specimen was submerged in water. The experiments were carried out by three types of wavelengths i.e. 1030 nm, 515nm, 343nm, with 500 fs laser pulses. The scales of these spikes are much smaller than micro spikes that are constructed by laser irradiation of silicon surface in vacuum or gases like SF6, Cl2. The Si nano-columns of 300 nm or less in width were characterized by SEM measurements. The formation of these Si Nano-columns that were revealed by SEM observation, indicates chemical etching with laser ablation occurred when surface exposed by laser beam. We observed 200 nm spikes height at the center of laser beam profile and the ones uniform in height at lateral incident area.

High-power long-wavelength room-temperature MOVPE-grown quantum cascade lasers with air-semiconductor waveguide

2008 ◽  
Vol 44 (8) ◽  
pp. 525 ◽  
Author(s):  
Q.J. Wang ◽  
C. Pflügl ◽  
L. Diehl ◽  
F. Capasso ◽  
S. Furuta ◽  
...  
Keyword(s):  
High Power ◽  
Room Temperature ◽  
Quantum Cascade Lasers ◽  
Long Wavelength ◽  
Quantum Cascade ◽  
Cascade Lasers

Generation and Evaluation of Sub-15 fs Laser Pulses

2005 ◽  
Vol 22 (3) ◽  
pp. 611-614 ◽  
Author(s):  
Zhu Chang-Jun ◽  
Wang Yun-Cai ◽  
Zhou Jian-Ying
Keyword(s):  
Laser Pulses ◽  
Fs Laser

Room temperature spin injection into SiC via Schottky barrier

2018 ◽  
Vol 113 (22) ◽  
pp. 222402 ◽  
Author(s):  
L. Huang ◽  
H. Wu ◽  
P. Liu ◽  
X. M. Zhang ◽  
B. S. Tao ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Spin Injection
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