Formation of Silicon and Silicon-Based Semiconductor Materials via Photoinduced Reaction Using Femtosecond Laser

2011 ◽  
Vol 1288 ◽  
Author(s):  
Masakazu Nishimura ◽  
Shingo Kanehira ◽  
Masaaki Sakakura ◽  
Yasuhiko Shimotsuma ◽  
Kiyotaka Miura ◽  
...  

ABSTRACTWe have succeeded in silicon (Si) precipitation inside a glass/aluminum (Al) sandwich structure via photoinduced reaction using femtosecond (fs) laser irradiation. The sandwich structure was fabricated by direct bonding below 573 K. Raman spectra at the photomodified area indicated that Si crystals formed at the interface between the glass and metallic Al after the laser irradiation. In addition, the particle size of the precipitated Si could be changed by changing the pulse energy of the laser. Furthermore, we have also focused the laser pulses on Fe-Si film to trigger crystallization and phase transformation of FexSiy at the interface between Fe/Si multilayer and glass.

2012 ◽  
Vol 16 ◽  
pp. 15-20 ◽  
Author(s):  
Omid Tayefeh Ghalehbeygi ◽  
Vural Kara ◽  
Levent Trabzon ◽  
Selcuk Akturk ◽  
Huseyin Kizil

We fabricated Si Nano-columns by a femtosecond laser with various wavelengths and process parameters, whilst the specimen was submerged in water. The experiments were carried out by three types of wavelengths i.e. 1030 nm, 515nm, 343nm, with 500 fs laser pulses. The scales of these spikes are much smaller than micro spikes that are constructed by laser irradiation of silicon surface in vacuum or gases like SF6, Cl2. The Si nano-columns of 300 nm or less in width were characterized by SEM measurements. The formation of these Si Nano-columns that were revealed by SEM observation, indicates chemical etching with laser ablation occurred when surface exposed by laser beam. We observed 200 nm spikes height at the center of laser beam profile and the ones uniform in height at lateral incident area.


2021 ◽  
pp. 2150023
Author(s):  
YU-XIAO CUI ◽  
PING GUO ◽  
XUEMING ZHU ◽  
YAN-LING TIAN ◽  
DA-WEI ZHANG ◽  
...  

Femtosecond (fs) laser ablation has been recognized as an effective and promising technique for high-precision processing of natural and synthesized diamond. In this work, a study of femtosecond laser polishing for nanopolycrystalline diamond (NCD) films by chemical vapor deposition (CVD) is reported. The laser irradiation is induced by 200-fs laser pulses with a repetition frequency of 50[Formula: see text]MHz, and various laser fluences are employed to investigate their polishing effectiveness. The results show that the optimal laser fluence is 0.7[Formula: see text]J/cm2, at which the nanodiamond grains on top of the cauliflower-like clusters of NCD films can be ablated. With such laser fluence, the mean surface roughness of NCD films reduces from 73.84[Formula: see text]nm to 31.88[Formula: see text]nm, which presents a 57% reduction. Nevertheless, when the laser fluence rises beyond 0.7[Formula: see text]J/cm2, large amount of amorphous carbon (a-C) balls and porous lava-like morphology would come into being, resulting in severe degradation of the NCD surface.


2019 ◽  
Vol 9 (19) ◽  
pp. 4022 ◽  
Author(s):  
Zeyad Almutairi ◽  
Kaleem Ahmad ◽  
Mosaad Alanazi ◽  
Abdulaziz Alhazaa

There are continued efforts to process and join single wall carbon nanotubes (SWCNTs) in order to exploit their exceptional functional properties for real-world applications. In this work, we report experimental observations of femtosecond laser irradiation on SWCNTs, in order to process and join them through an efficient and cost-effective technique. The nanotubes were deagglomerated in ethanol by an ultrasonicator and thin slurries of SWCNTs were spread evenly on glass substrates. A laser micromachining workstation for laboratory FemtoLAB (workshop of photonics) has been employed to irradiate the different SWCNTs film samples. The effect of laser parameters, such as pulse wavelength, laser power, etc., were systematically tuned to see the possibility of joining the SWCNTs ropes. Several experiments have been performed to optimize the parameters on different samples of SWCNTs. In general, the nanotubes were mostly damaged by the infrared (1st harmonics femtosecond laser) irradiation on the focal plane. However, the less damaging effect was observed for second harmonics (green wavelength) irradiation. The results suggest some joining of nanotubes along the sides of the focus plane, as well as on the center at the brink of nanotubes. The joining is considered to be established within the region of the high field intensity of the exposed femtosecond laser beam.


RSC Advances ◽  
2016 ◽  
Vol 6 (108) ◽  
pp. 106754-106761 ◽  
Author(s):  
Sreekanth Perumbilavil ◽  
Kishore Sridharan ◽  
Ann Rose Abraham ◽  
Harsha P. Janardhanan ◽  
Nandakumar Kalarikkal ◽  
...  

We report comparative measurements of size dependent nonlinear transmission and optical power limiting in nanocrystalline magnesium ferrite (MgFe2O4) particles excited by short (nanosecond) and ultrashort (femtosecond) laser pulses.


2015 ◽  
Vol 229 (10-12) ◽  
Author(s):  
Nicola Reusch ◽  
Steffen Griebe ◽  
Johannes Karges ◽  
Karl-Michael Weitzel

AbstractThe femtosecond laser ionization of several small hydrocarbon molecules (methane, ethane, propane) has been investigated as a function of the second order spectral phase (linear chirp) of laser pulses centered at


2015 ◽  
Vol 17 (38) ◽  
pp. 24738-24747 ◽  
Author(s):  
Yi-Ci Li ◽  
Yu-Ting Kuo ◽  
Po-Yuan Huang ◽  
Sidney S. Yang ◽  
Cheng-I Lee ◽  
...  

By chopping 820 nm 18 femtosecond (fs)-laser pulses into trains with both train-width and train-to-train separation considerably longer than the thermal diffusivity time constant τth of CS2, we conducted Z-scan measurements on it at various times relative to the leading pulse of each train (T's).


1999 ◽  
Vol 558 ◽  
Author(s):  
M. Löken ◽  
Th. Lipinsky ◽  
L. Kappius ◽  
S. Mantl ◽  
Ch. Buchal

ABSTRACTWe have studied different metal-silicon-metal (MSM) Schottky barrier photodiodes for the detection of visible and infrared light. We investigated the different Schottky barriers from Ti, Cr and Pt. At infrared wavelengths, the Schottky contacts provide electrons and holes by “internal photoemission” into the Si. The lowest Schottky barrier determines the long wavelength cutoff and the current noise. The temporal response was measured byultrashort (100 fs) laser pulses from a Ti:A1203 laser, which were converted by an optical parametric oscillator to a wavelength of 1.1 to 1.6 μm. The measurements were performed between 30 K and room temperature. The best detectors show a pulse width of 3.2ps FWHM at 1.25 μm wavelength and room temperature. To our knowledge this is the fastest infrared response for silicon based diodes ever reported.


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