Plasma Deposition and Interface Control in Low Temperature Processing of Thin Film Solar Cells

1997 ◽  
Vol 485 ◽  
Author(s):  
B. Jagannathan ◽  
W. A. Anderson
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Carrier Transport ◽  
Crystalline Silicon ◽  
Plasma Deposition ◽  
Microcrystalline Silicon ◽  
Interface Control ◽  
Electro Optic ◽  
Low Temperature Processing ◽  
Si Films

AbstractPlasma deposition of thin silicon films with a variable microstructure and controlled interface formation techniques are being developed for thin film silicon/polycrystalline silicon solar cells. Low hydrogen content amorphous (a-Si) or microcrystalline silicon (μ c-Si) films were obtained by controlling the H2 dilution of 2% SiH4/He in a microwave ECR discharge. The films were characterized for structural and electro-optic properties. Junction creation for solar cells was investigated by depositing single or multilayers of the film silicon onto crystalline silicon (c-Si). Effort to improve carrier transport and photovoltaic (PV) properties was pursued through interface modifications effected by varying the microstructure of the layer in contact with the substrate. Cells with 7% conversion efficiency (No A/R) were obtained for an a-Si/c-Si heterojunction configuration. Improved carrier transport and PV properties (9% ef ficient) were achieved by inserting a thin μ c-Si layer in the above structure.

Amorphous Silicon, Microcrystalline Silicon, and Thin-Film Polycrystalline Silicon Solar Cells

MRS Bulletin ◽  
2007 ◽  
Vol 32 (3) ◽  
pp. 219-224 ◽  
Author(s):  
Ruud E.I. Schropp ◽  
Reinhard Carius ◽  
Guy Beaucarne
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Crystalline Silicon ◽  
Low Cost ◽  
Float Glass ◽  
Film Material ◽  
Microcrystalline Silicon ◽  
Plastic Substrates ◽  
Thin Film Silicon ◽  
Amorphous Si

AbstractThin-film solar cell technologies based on Si with a thickness of less than a few micrometers combine the low-cost potential of thin-film technologies with the advantages of Si as an abundantly available element in the earth's crust and a readily manufacturable material for photovoltaics (PVs). In recent years, several technologies have been developed that promise to take the performance of thin-film silicon PVs well beyond that of the currently established amorphous Si PV technology. Thin-film silicon, like no other thin-film material, is very effective in tandem and triple-junction solar cells. The research and development on thin crystalline silicon on foreign substrates can be divided into two different routes: a low-temperature route compatible with standard float glass or even plastic substrates, and a high-temperature route (>600°C). This article reviews the material properties and technological challenges of the different thin-film silicon PV materials.

scholarly journals Material and solar cell research in high efficiency micromorph tandem solar cell

2015 ◽  
Vol 37 ◽  
pp. 434 ◽  
Author(s):  
Razagh Hafezi ◽  
Soroush Karimi ◽  
Sharie Jamalzae ◽  
Masoud Jabbari
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Chemical Vapour ◽  
Microcrystalline Silicon ◽  
Tandem Solar Cells ◽  
Bottom Cell

“Micromorph” tandem solar cells consisting of a microcrystalline silicon bottom cell and an amorphous silicon top cell are considered as one of the most promising new thin-film silicon solar-cell concepts. Their promise lies in the hope of simultaneously achieving high conversion efficiencies at relatively low manufacturing costs. The concept was introduced by IMT Neuchâtel, based on the VHF-GD (very high frequency glow discharge) deposition method. The key element of the micromorph cell is the hydrogenated microcrystalline silicon bottom cell that opens new perspectives for low-temperature thin-film crystalline silicon technology. This paper describes the use, within p–i–n- and n–i–p-type solar cells, of hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (_c-Si:H) thin films (layers), both deposited at low temperatures (200_C) by plasma-assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen. Optical and electrical properties of the i-layers are described. Finally, present performances and future perspectives for a high efficiency ‘micromorph’ (mc-Si:Hya-Si:H) tandem solar cells are discussed.

scholarly journals The “Micromorph” Cell: a New Way to High-Efficiency-Low-Temperature Crystalline Silicon Thin-Film Cell Manufacturing?

1996 ◽  
Vol 452 ◽  
Author(s):  
H. Keppner ◽  
P. Torres ◽  
J. Meier ◽  
R. Platz ◽  
D. Fischer ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
Cell Manufacturing ◽  
Manufacturing Techniques

AbstractIn the past, microcrystalline silicon (μc-Si:H) has been successfully used as active semiconductor in entirely μc-Si:H p-i-n solar cells and a new type of tandem solar cell, called the “micromorph” cell, was introduced [1]. Micromorph cells consist of an amorphous silicon top cell and a microcrystalline bottom cell. In the paper a micromorph cell with a stable efficiency of 10.7 % (confirmed by ISE Freiburg) is reported.Among sofar existing crystalline silicon-based solar cell manufacturing techniques, the application of microcrystalline silicon is a new promising way towards implementing thin-film silicon solar cells with a low temperature deposition. Microcrystalline silicon can, indeed, be deposited at temperatures as low as 220°C; hence, the way is here open to use cheap substrates as, e.g. plastic or glass. In the present paper, the development of single and tandem cells containing microcrystalline silicon is reviewed. As stated in previous publications, microcrystalline silicon technique has at present a severe drawback that has yet to be overcome: Its deposition rate for solar-grade material is about 2Å/s; in a more recent case 4.3 Å/s [2] could be obtained. In the present paper, using suitable mixtures of silane, hydrogen and argon, deposition rates of 9.4 Å/s are presented. Thereby the dominating plasma mechanism and the basic properties of resulting layers are described in detail. A first entirely microcrystalline cell deposited at 8.7 Å/s has an efficiency of 3.15%.

scholarly journals Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF4 Based Process Conditions

Materials ◽  
2021 ◽  
Vol 14 (22) ◽  
pp. 6947
Author(s):  
Mario Moreno ◽  
Arturo Ponce ◽  
Arturo Galindo ◽  
Eduardo Ortega ◽  
Alfredo Morales ◽  
...  
Keyword(s):  
Thin Film ◽  
Volume Fraction ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Process Conditions ◽  
Epitaxial Silicon ◽  
Microcrystalline Silicon ◽  
Transmission Electron ◽  
Si Films

Hydrogenated microcrystalline silicon (µc-Si:H) and epitaxial silicon (epi-Si) films have been produced from SiF4, H2 and Ar mixtures by plasma enhanced chemical vapor deposition (PECVD) at 200 °C. Here, both films were produced using identical deposition conditions, to determine if the conditions for producing µc-Si with the largest crystalline fraction (XC), will also result in epi-Si films that encompass the best quality and largest crystalline silicon (c-Si) fraction. Both characteristics are of importance for the development of thin film transistors (TFTs), thin film solar cells and novel 3D devices since epi-Si films can be grown or etched in a selective manner. Therefore, we have distinguished that the H2/SiF4 ratio affects the XC of µc-Si, the c-Si fraction in epi-Si films, and the structure of the epi-Si/c-Si interface. Raman and UV-Vis ellipsometry were used to evaluate the crystalline volume fraction (Xc) and composition of the deposited layers, while the structure of the films were inspected by high resolution transmission electron microscopy (HRTEM). Notably, the conditions for producing µc-Si with the largest XC are different in comparison to the fabrication conditions of epi-Si films with the best quality and largest c-Si fraction.

Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

2009 ◽  
Vol 517 (12) ◽  
pp. 3507-3512 ◽  
Author(s):  
F. Finger ◽  
O. Astakhov ◽  
T. Bronger ◽  
R. Carius ◽  
T. Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Microcrystalline Silicon
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