A Stem Study of P and Ge Segregation to Grain Boundaries in Si1-xGex Thin Films

1999 ◽  
Vol 557 ◽  
Author(s):  
W. Qin ◽  
D. G. Ast ◽  
T. I. Kamins
Keyword(s):  
Grain Boundaries ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Equilibrium Process ◽  
Sims Analysis ◽  
Secondary Ion ◽  
Edx Microanalysis

AbstractThe segregation of phosphorus to grain boundaries in phosphorus implanted Si0.87Ge0.13 films, deposited by chemical vapor deposition (CVD), was directly observed by scanning transmission electron microscopy (STEM) with energy dispersive x-ray (EDX) microanalysis. The segregation was determined to be a thermal equilibrium process by measuring and comparing the average phosphorus concentrations at the grain boundaries in Si0.87Ge0.13 films subjected to 700, 750 or 800°C annealing, following the implantation and 1000°C annealing processes. The measured segregation energy was 0.28 eV/atom. No Ge segregation was found at grain boundaries in phosphorus implanted Si0.87Ge0.13 films by STEM x-ray microanalysis. Neither was evidence shown by STEM microanalysis that Ge segregated to grain boundaries in intrinsic Si1-xGex films with x = 0.02, 0.13 and 0.31. Secondary ion mass spectrometry (SIMS) analysis showed that these intrinsic Si1-xGex films contained 1019 to 4 × 1019/cm-3H, depending on the deposition temperature.

A Study of Grain Boundaries in High TC Superconducting Yba2Cu3O7-x Thin Films Using High Resolution Analytical Stem

1989 ◽  
Vol 169 ◽  
Author(s):  
D. H. Shin ◽  
J. Silcox ◽  
S. E. Russek ◽  
D. K. Lathrop ◽  
R. A. Buhrman
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Grain Boundaries ◽  
Scanning Transmission Electron Microscope ◽  
Atomic Resolution ◽  
High Tc ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Edx Microanalysis

AbstractGrain boundaries in thin films of high Tc YBa2Cu3O7-x superconductors have been investigated with high resolution scanning transmission electron microscope (STEM) imaging and nanoprobe energy dispersive x-ray (EDX) analysis. Atomic resolution images indicate that the grain boundaries are mostly clean, i.e., free of a boundary layer of different phase or of segregation, and are often coherent. EDX microanalysis with a 10 Å spatial resolution also indicates no composition deviation at the grain boundaries.

Analysis of NaF precursor layers during the different stages of the Cu(In,Ga)Se2 coevaporation process

2013 ◽  
Vol 1538 ◽  
pp. 9-14 ◽  
Author(s):  
M. Edoff ◽  
P.M.P. Salomé ◽  
A. Hultqvist ◽  
V. Fjällström
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Back Contact ◽  
Evaporation Process ◽  
X Ray ◽  
Transmission Electron ◽  
Sims Analysis ◽  
Secondary Ion

ABSTRACTNaF precursor layers used for providing Na to Cu(In,Ga)Se2 (CIGS) grown on Na-free substrates have been studied. The NaF layers were deposited on top of the Mo back contact prior to the CIGS co-evaporation process. The co-evaporation process was interrupted after the preheating steps, and after part of the CIGS layer was grown. Completed samples were also studied. After the preheating, the NaF layers were analyzed with X-ray Photoelectron Spectroscopy and after growing part and all of the CIGS film, the Mo/NaF/CIGS stack was characterized using transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS). The NaF layers were found to be stable in thickness and composition during the pre-heating in selenium containing atmosphere before the CIGS process. The TEM analyses on the partly grown samples show a layer at the CIGS/Mo interface, which we interpret as a partly consumed NaF layer. This is corroborated by the SIMS analysis. In finalized samples the results are less clear, but TEM images show an increased porosity at the position of the NaF layer.

Effects of Sputtered Ir and IrO2 Electrodes on the Properties of PZT Thin Films Deposited By MOCVD

1997 ◽  
Vol 493 ◽  
Author(s):  
M. Shimizu ◽  
H. Fujisawa ◽  
S. Hyodo ◽  
S. Nakashima ◽  
H. Niu ◽  
...  
Keyword(s):  
Bottom Electrode ◽  
Secondary Ion Mass Spectrometry ◽  
Rf Magnetron Sputtering ◽  
Electrode Thickness ◽  
Pzt Thin Films ◽  
Transmission Electron ◽  
Pzt Films ◽  
Sims Analysis ◽  
Secondary Ion ◽  
Strong Diffusion

ABSTRACTThe effect of bottom electrode thickness on the electrical properties of PZT capacitors with Ir and IrO2, electrodes was investigated, with particular attention to switching endurance characteristics. Ir and IrO2 electrodes were prepared by rf magnetron sputtering. PZT films were grown by MOCVD. Secondary ion mass spectrometry (SIMS) analysis showed thick Ir and IrO2 electrodes performed well as a barrier to the PZT elements. On the other hand, strong diffusion at the interface between PZT and the electrodes was observed, when the Ir and IrO2 electrodes were thin. From transmission electron microscope (TEM) observation, it was also found that there was an amorphous intermediate layer at the interface between the PZT and the thick Ir bottom electrode. The switching endurance characteristics were influenced by the thickness of the Ir bottom electrode.

Strain-Induced Diffusion in Heteroepitaxially Grown CuInSe2 on GaAs Substrates

1995 ◽  
Vol 399 ◽  
Author(s):  
P. Fons ◽  
S. Niki ◽  
A. Yamada ◽  
A. Okada ◽  
D.J. Tweet
Keyword(s):  
Thin Film ◽  
Secondary Ion Mass Spectrometry ◽  
Second Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
State Of Stress ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTA series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

scholarly journals The universal sample holders of microanalytical instruments of FIB, TEM, NanoSIMS, and STXM-NEXAFS for the coordinated analysis of extraterrestrial materials

2020 ◽  
Author(s):  
Motoo Ito ◽  
Naotaka Tomioka ◽  
Kentaro Uesugi ◽  
Masayuki Uesugi ◽  
Yu Kodama ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Isotopic Abundances ◽  
Sample Return Mission ◽  
Extraterrestrial Materials ◽  
Sample Damage

Abstract We developed universal sample holders (the Kochi grid, Kochi clamp, and Okazaki cell) and a transfer vessel (facility-to-facility transfer container (FFTC)) to analyze sensitive and fragile samples, such as extremely small extraterrestrial materials. The holders and container prevent degradation, contamination due to terrestrial atmosphere (water vapor and oxygen gas) and small particles, as well as mechanical sample damages. The FFTC can isolate the samples from the effects of the atmosphere for more than a week. The Kochi grid and clamp were made for a coordinate micro/nano-analysis that utilize a focused-ion beam apparatus, transmission electron microscope, and nanoscale secondary ion mass spectrometry. The Okazaki cell was made as an additional attachment for a scanning transmission X-ray microscope that uses near edge X-ray absorption fine structure. The coordinated analysis involving these holders was successfully carried out without any sample damage or loss, thereby enabling us to obtain sufficient quality of analytical datasets of textures, crystallography, elemental/isotopic abundances, and molecular functional groups for µm-sized minerals and organics in both an Antarctic micrometeorite and a carbonaceous chondrite. We will apply the coordinated analysis to acquire the complex characteristics in samples that obtain by the future spacecraft sample return mission.

Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure

2021 ◽  
Author(s):  
Wen-Hsin Chang ◽  
Hsien-Wen Wan ◽  
Yi-Ting Cheng ◽  
Yen-Hsun Glen Lin ◽  
Toshifumi IRISAWA ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
X Ray Diffraction ◽  
Thermal Budget ◽  
X Ray ◽  
Transmission Electron ◽  
Lift Off ◽  
Low Thermal Budget ◽  
3D Applications ◽  
Secondary Ion

Abstract Germanium-on-Insulator (GeOI) structures with the surface orientation of (111) have been successfully fabricated by using low thermal budget epitaxial-lift-off (ELO) technology via direct bonding and selective etching. The material characteristics and transport properties of the Ge(111)OI structure have been systematically investigated through secondary-ion mass spectrometry, Raman spectroscopy, X-ray diffraction, high-resolution transmission electron microscope, and Hall measurement. The transferred Ge (111) layer remained almost intact from the as-grown epitaxial layers, indicating the benefits of ELO technology. The low thermal budget ELO technology demonstrated in this work is promising to integrate Ge channels with different surface orientations on Si (100) substrates for future monolithic 3D applications.

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