SiO[sub 2] thickness determination by x-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry

2000 ◽  
Vol 18 (1) ◽  
pp. 440 ◽  
Author(s):  
D. A. Cole ◽  
J. R. Shallenberger ◽  
S. W. Novak ◽  
R. L. Moore ◽  
M. J. Edgell ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Ion Mass Spectrometry ◽  
X Ray ◽  
Transmission Electron ◽  
Secondary Ion

Chromium implantation in silica glass

1996 ◽  
Vol 11 (1) ◽  
pp. 229-235 ◽  
Author(s):  
E. Cattaruzza ◽  
R. Bertoncello ◽  
F. Trivillin ◽  
P. Mazzoldi ◽  
G. Battaglin ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Photoelectron Spectroscopy ◽  
Silica Glass ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray ◽  
Chromium Silicide ◽  
Secondary Ion

Silica glass was implanted with chromium at the energy of 35 and 160 keV and at fluences varying from 1 × 1016 to 11 × 1016 ions cm−2. In a set of chromium-implanted samples significant amounts of carbon were detected. Samples were characterized by x-ray photoelectron spectroscopy, x-ray-excited Auger electron spectroscopy, secondary ion mass spectrometry, and Rutherford backscattering spectrometry. Chromium silicide and chromium oxide compounds were observed; the presence of carbon in the implanted layers induces the further formation of chromium carbide species. Thermodynamic considerations applied to the investigated systems supply indications in agreement with the experimental evidences.

Analysis of NaF precursor layers during the different stages of the Cu(In,Ga)Se2 coevaporation process

2013 ◽  
Vol 1538 ◽  
pp. 9-14 ◽  
Author(s):  
M. Edoff ◽  
P.M.P. Salomé ◽  
A. Hultqvist ◽  
V. Fjällström
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Back Contact ◽  
Evaporation Process ◽  
X Ray ◽  
Transmission Electron ◽  
Sims Analysis ◽  
Secondary Ion

ABSTRACTNaF precursor layers used for providing Na to Cu(In,Ga)Se2 (CIGS) grown on Na-free substrates have been studied. The NaF layers were deposited on top of the Mo back contact prior to the CIGS co-evaporation process. The co-evaporation process was interrupted after the preheating steps, and after part of the CIGS layer was grown. Completed samples were also studied. After the preheating, the NaF layers were analyzed with X-ray Photoelectron Spectroscopy and after growing part and all of the CIGS film, the Mo/NaF/CIGS stack was characterized using transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS). The NaF layers were found to be stable in thickness and composition during the pre-heating in selenium containing atmosphere before the CIGS process. The TEM analyses on the partly grown samples show a layer at the CIGS/Mo interface, which we interpret as a partly consumed NaF layer. This is corroborated by the SIMS analysis. In finalized samples the results are less clear, but TEM images show an increased porosity at the position of the NaF layer.

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