Gas Phase and Surface Kinetics of Diamond-Like Carbon Films Growth in Pecvd Reactors

1998 ◽  
Vol 555 ◽  
Author(s):  
Maurizio Masi ◽  
Carlo Cavallotti ◽  
Sergio Carrà

AbstractThe surface and gas-phase kinetic of deposition of diamond-like carbon films (DLC) obtained in plasma reactors using methane as precursor was here investigated. Kinetic constants of electronic reactions were evaluated using experimental ionization and neutral dissociation cross sections and the Druyvestein electron distribution function. Kinetic constants for ionic and neutral reactions were found in the literature. Surface reactions were divided into processes involving the impingement of gas-phase radicals or ions from the plasma and desorption or recombination reactions of adsorbed surface species. The kinetic constants of the former processes were evaluated.from the ambipolar theory or from the kinetic theory of gases, while the other kinetic constants were determined from analogy with hydrocarbon chemistry. The exception is the desorption of adsorbed methyl radicals, whose kinetic constant was fitted over experimental data. The predictivity of the model was tested through the simulation of three reactors described in the literature widely differing for operating conditions.

2002 ◽  
Vol 719 ◽  
Author(s):  
Myoung-Woon Moon ◽  
Kyang-Ryel Lee ◽  
Jin-Won Chung ◽  
Kyu Hwan Oh

AbstractThe role of imperfections on the initiation and propagation of interface delaminations in compressed thin films has been analyzed using experiments with diamond-like carbon (DLC) films deposited onto glass substrates. The surface topologies and interface separations have been characterized by using the Atomic Force Microscope (AFM) and the Focused Ion Beam (FIB) imaging system. The lengths and amplitudes of numerous imperfections have been measured by AFM and the interface separations characterized on cross sections made with the FIB. Chemical analysis of several sites, performed using Auger Electron Spectroscopy (AES), has revealed the origin of the imperfections. The incidence of buckles has been correlated with the imperfection length.


1990 ◽  
Vol 204 ◽  
Author(s):  
T.J. Mountziaris ◽  
N.K. Ingle ◽  
S. Kalyanasundaram

ABSTRACTWe present detailed chemical reaction mechanisms that describe the deposition of GaAs films from tertiary-butyl-arsine (TBA) and trimethyl-gallium (TMG) as well as the deposition of AlxGa1-xAs (0≤x≤1) films from trimethyl-aluminum (TMAl), TMG and arsine during metalorganic vapor phase epitaxy (MOVPE). The kinetic models include both gas-phase and surface reactions, whose rates are used to predict production or consumption of the participating species as well as the growth rate of the film. Two-dimensional simulations of flow, heat and mass transfer in horizontal MOVPE reactors have been coupled with the kinetic models to provide a realistic picture of the process. The predicted growth rates at different operating conditions as well as the predicted incorporation ratio, x, of Al in the AlxGal-xAs films are in good agreement with experimental observations.


2010 ◽  
Vol 42 (2) ◽  
pp. 77-87 ◽  
Author(s):  
Susumu Takabayashi ◽  
Keishi Okamoto ◽  
Hiroaki Motoyama ◽  
Tatsuyuki Nakatani ◽  
Hiroyuki Sakaue ◽  
...  

1996 ◽  
Vol 446 ◽  
Author(s):  
B. Druz ◽  
V.I. Polyakov ◽  
E. Ostan ◽  
A. Hayes ◽  
A.I. Rukovishnikov ◽  
...  

AbstractDiamond-like carbon (DLC) films with 4-400 nm thickness were deposited on silicon substrates using direct ion beam from an RF inductively coupled CH4 - plasma (ICP) source. The dependence of the film electrical and photoelectrical properties on methane flow were examined. Two kinds of trapping centers with different activation energies and capture cross-sections, and very low densities were discovered by the Q-DLTS method. The influence of thermal annealing in air at 100-450°C was investigated. The current leakage and defect concentration were reduced while electrical breakdown field and photoresponse were increased in annealed films. The results obtained have been used for optimization of the technology to prepare thin films with good protective, electrically insulating, and passivating properties.


Author(s):  
D.C. Dufner

The general goal of this research is to clarify mechanisms of solid state reactions at the atomic level as a step in the rationalization of macroscopic reaction behavior in solids. A study of intermetallic alloy formation resulting from interdiffusion of metals in thin films can be made by HREM. In this work, reactions between Pt and Sn in thin films are studied to elucidate mechanisms for structural and compositional changes during the interdiffusion process.Thin films of Pt and Sn used in this study were prepared by the two-film method introduced by Shiojiri. Few hundred angstroms of Pt were vacuum-deposited onto holey carbon films mounted on TEM grids. Sn films with an average thickness of 200Å were created by evaporation at rates of 15-30 Å/sec onto air-cleaved KBr substrates. The Sn films were wet-stripped and collected on the holey Pt grids. Figure 1 shows a cross-section schematic of a Pt-Sn couple. While this two-film arrangement did not allow observations of the actual reaction interface, microtomy was used to produce cross-sections.


1996 ◽  
Vol 06 (C5) ◽  
pp. C5-91-C5-95 ◽  
Author(s):  
S. Lee ◽  
B. Chung ◽  
T.-Y. Ko ◽  
H. Cho ◽  
D. Jeon ◽  
...  

2014 ◽  
Vol 29 (9) ◽  
pp. 941
Author(s):  
JIANG Jin-Long ◽  
WANG Qiong ◽  
HUANG Hao ◽  
ZHANG Xia ◽  
WANG Yu-Bao ◽  
...  

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