Genetically Engineered Nanostructure Devices

1998 ◽  
Vol 551 ◽  
Author(s):  
Gerhard Klimeck ◽  
Carlos H. Salazar-Lazaro ◽  
Adrian Stoica ◽  
Thomas Cwik
Keyword(s):  
Genetic Algorithm ◽  
Electron Transport ◽  
Quantum Well ◽  
Field Effect Transistors ◽  
General Purpose ◽  
Genetically Engineered ◽  
Atomic Scale ◽  
Quantum Mechanical ◽  
Random Structure ◽  
Analysis Tool

AbstractMaterial variations on an atomic scale enable the quantum mechanical functionality of devices such as resonant tunneling diodes (RTDs), quantum well infrared photodetectors (QWIPs), quantum well lasers, and heterostructure field effect transistors (HFETs). The design and optimization of such heterostructure devices requires a detailed understanding of quantum mechanical electron transport. The Nanoelectronic Modeling Tool (NEMO) is a general-purpose quantum device design and analysis tool that addresses this problem. NEMO was combined with a parallelized genetic algorithm package (PGAPACK) to optimize structural and material parameters. The electron transport simulations presented here are based on a full band simulation, including effects of non-parabolic bands in the longitudinal and transverse directions relative to the electron transport and Hartree charge self-consistency. The first result of the genetic algorithm driven quantum transport calculation with convergence of a random structure population to experimental data is presented.

scholarly journals Electrical characteristics of amyloid beta peptides in vertical junctions

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Sohyeon Seo ◽  
Jinju Lee ◽  
Jungsue Choi ◽  
G. Hwan Park ◽  
Yeseul Hong ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Electron Transport ◽  
Amyloid Beta ◽  
Field Effect Transistors ◽  
Brain Diseases ◽  
Electrical Characteristics ◽  
Transport Pathway ◽  
Sequence Dependence ◽  
Aβ Oligomers ◽  
Aβ Peptides

AbstractAssembled amyloid beta (Aβ) peptides have been considered pathological assemblies involved in human brain diseases, and the electron transfer or electron transport characteristics of Aβ are important for the formation of structured assemblies. Here, we report the electrical characteristics of surface-assembled Aβ peptides similar to those observed in Alzheimer’s patients. These characteristics correlate to their electron transfer characteristics. Electrical current–voltage plots of Aβ vertical junction devices show the Aβ sequence dependence of the current densities at both Aβ monomers (mono-Aβs) and Aβ oligomers (oli-Aβs), while Aβ sequence dependence is not clearly observed in the electrical characteristics of Aβ planar field effect transistors (FETs). In particular, surface oligomerization of Aβ peptides drastically decreases the activity of electron transfer, which presents a change in the electron transport pathway in the Aβ vertical junctions. Electron transport at oli-Aβ junctions is symmetric (tunneling/tunneling) due to the weak and voltage-independent coupling of the less redox-reactive oli-Aβ to the contacts, while that at mono-Aβ junctions is asymmetric (hopping/tunneling) due to redox levels of mono-Aβ voltage-dependently coupled with contact electrodes. Consequently, through vertical junctions, the sequence- and conformation-dependent electrical characteristics of Aβs can reveal their electron transfer activities.

scholarly journals Electron transport of perovskite oxide BaSnO3 on (110) DyScO3 substrate with channel-recess for ferroelectric field effect transistors

2021 ◽  
Vol 118 (4) ◽  
pp. 042105
Author(s):  
Junao Cheng ◽  
Hao Yang ◽  
Nicholas G. Combs ◽  
Wangzhou Wu ◽  
Honggyu Kim ◽  
...  
Keyword(s):  
Electron Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Perovskite Oxide

scholarly journals Quantum Mechanical Repulsion of Exciton Levels in a Disordered Quantum Well

2001 ◽  
Vol 87 (7) ◽  
Author(s):  
Francesca Intonti ◽  
Valentina Emiliani ◽  
Christoph Lienau ◽  
Thomas Elsaesser ◽  
Vincenzo Savona ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Mechanical

Structural Optimization of Composite Panel with Lamination Parameters and Equivalent Stiffness Laminate Method

2014 ◽  
Vol 496-500 ◽  
pp. 429-435
Author(s):  
Xiao Ping Zhong ◽  
Peng Jin
Keyword(s):  
Genetic Algorithm ◽  
Structural Optimization ◽  
Composite Structure ◽  
Optimization Procedure ◽  
Optimization Method ◽  
Composite Panel ◽  
Analysis Tool ◽  
Equivalent Stiffness ◽  
Lamination Parameters ◽  
Design Variables

Firstly, a two-level optimization procedure for composite structure is investigated with lamination parameters as design variables and MSC.Nastran as analysis tool. The details using lamination parameters as MSC.Nastran input parameters are presented. Secondly, with a proper equivalent stiffness laminate built to substitute for the lamination parameters, a two-level optimization method based on the equivalent stiffness laminate is proposed. Compared with the lamination parameters-based method, the layer thicknesses of the equivalent stiffness laminate are adopted as continuous design variables at the first level. The corresponding lamination parameters are calculated from the optimal layer thicknesses. At the second level, genetic algorithm (GA) is applied to identify an optimal laminate configuration to target the lamination parameters obtained. The numerical example shows that the proposed method without considering constraints of lamination parameters can obtain better optimal results.

A Novel Peripheral Circuit for SWSFET Based Multivalued Static Random-Access Memory

2020 ◽  
Vol 29 (01n04) ◽  
pp. 2040010
Author(s):  
R. H. Gudlavalleti ◽  
B. Saman ◽  
R. Mays ◽  
Evan Heller ◽  
J. Chandy ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Field Effect Transistors ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Access Memory ◽  
Input Gate ◽  
Reduction In Area

This paper presents the peripheral circuitry for a multivalued static random-access memory (SRAM) based on 2-bit CMOS cross-coupled inverters using spatial wavefunction switched (SWS) field effect transistors (SWSFETs). The novel feature is a two quantum well/quantum dot channel n-SWSFET access transistor. The reduction in area with four-bit storage-per-cell increases the memory density and efficiency of the SRAM array. The SWSFET has vertically stacked two-quantum well/quantum dot channels between the source and drain regions. The upper or lower quantum charge locations in the channel region is based on the input gate voltage. The analog behavioral modeling (ABM) of the SWSFET device is done using conventional BSIM 3V3 device parameters in 90 nm technology. The Cadence circuit simulations for the proposed memory cell and addressing/peripheral circuitry are presented.

The first of a new series of general purpose quantum mechanical molecular models

Tetrahedron ◽  
1993 ◽  
Vol 49 (34) ◽  
pp. 7393 ◽  
Author(s):  
Michael J.S. Dewar ◽  
Caoxian Jie ◽  
Jianguo Yu
Keyword(s):  
General Purpose ◽  
Quantum Mechanical ◽  
Molecular Models
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