Erratum: Quantum‐Mechanical Reflection of Electrons at Metal‐Semiconductor Barriers: Electron Transport in Semiconductor‐Metal‐Semiconductor Structures

C. R. Crowell; S. M. Sze

doi:10.1063/1.1656915

Erratum: Quantum‐Mechanical Reflection of Electrons at Metal‐Semiconductor Barriers: Electron Transport in Semiconductor‐Metal‐Semiconductor Structures

Journal of Applied Physics ◽

10.1063/1.1656915 ◽

1968 ◽

Vol 39 (8) ◽

pp. 4047-4047 ◽

Cited By ~ 2

Author(s):

C. R. Crowell ◽

S. M. Sze

Keyword(s):

Electron Transport ◽

Quantum Mechanical ◽

Semiconductor Structures

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Quantum‐Mechanical Reflection of Electrons at Metal‐Semiconductor Barriers: Electron Transport in Semiconductor‐Metal‐Semiconductor Structures

Journal of Applied Physics ◽

10.1063/1.1782103 ◽

1966 ◽

Vol 37 (7) ◽

pp. 2683-2689 ◽

Cited By ~ 87

Author(s):

C. R. Crowell ◽

S. M. Sze

Keyword(s):

Electron Transport ◽

Quantum Mechanical ◽

Semiconductor Structures

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Perspectives on Electron Transport in Semiconductor Structures

Condensed Systems of Low Dimensionality - NATO ASI Series ◽

10.1007/978-1-4684-1348-9_18 ◽

1991 ◽

pp. 235-245

Author(s):

F. Koch

Keyword(s):

Electron Transport ◽

Semiconductor Structures

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Computationally efficient quantum-mechanical technique to calculate the direct tunneling gate current in metal-oxide-semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1589173 ◽

2003 ◽

Vol 94 (3) ◽

pp. 2046-2052 ◽

Cited By ~ 4

Author(s):

M. M. A. Hakim ◽

A. Haque

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Computationally Efficient ◽

Gate Current ◽

Semiconductor Structures ◽

Direct Tunneling

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Two-dimensional quantum mechanical simulation of electron transport in nano-scaled Si-based MOSFETs

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/s1386-9477(03)00289-3 ◽

2003 ◽

Vol 19 (1-2) ◽

pp. 28-32 ◽

Cited By ~ 1

Author(s):

Wanqiang Chen ◽

Leonard F. Register ◽

Sanjay K. Banerjee

Keyword(s):

Electron Transport ◽

Quantum Mechanical ◽

Two Dimensional ◽

Mechanical Simulation

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Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects

IOP Conference Series Materials Science and Engineering ◽

10.1088/1757-899x/504/1/012021 ◽

2019 ◽

Vol 504 ◽

pp. 012021 ◽

Cited By ~ 1

Author(s):

A Islam ◽

K Kalna

Keyword(s):

Electron Transport ◽

Quantum Mechanical ◽

Mechanical Effects ◽

Interface Charges ◽

Quantum Mechanical Effects

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Optical phonon instability induced by high-speed electron transport in nanoscale semiconductor structures

Physical Review B ◽

10.1103/physrevb.73.035301 ◽

2006 ◽

Vol 73 (3) ◽

Author(s):

V. A. Kochelap ◽

A. A. Klimov ◽

K. W. Kim

Keyword(s):

Electron Transport ◽

Optical Phonon ◽

High Speed ◽

Semiconductor Structures

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Experimental study of hot-electron transport in semiconductor-metal-semiconductor structures

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1965.15596 ◽

1965 ◽

Vol 12 (9) ◽

pp. 509-509

Author(s):

S.M. Sze ◽

C.R. Crowell

Keyword(s):

Experimental Study ◽

Electron Transport ◽

Hot Electron ◽

Semiconductor Structures ◽

Hot Electron Transport

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Simulations of quantized inversion layer electron transport in 6H–Silicon carbide metal oxide semiconductor structures

Applied Physics Letters ◽

10.1063/1.121307 ◽

1998 ◽

Vol 72 (17) ◽

pp. 2156-2158 ◽

Cited By ~ 7

Author(s):

R. P. Joshi

Keyword(s):

Silicon Carbide ◽

Electron Transport ◽

Metal Oxide ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Hot electron transport through metal–oxide–semiconductor structures studied by ballistic electron emission spectroscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587821 ◽

1995 ◽

Vol 13 (4) ◽

pp. 1830 ◽

Cited By ~ 30

Author(s):

R. Ludeke

Keyword(s):

Electron Transport ◽

Metal Oxide ◽

Electron Emission ◽

Emission Spectroscopy ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Semiconductor Structures ◽

Ballistic Electron ◽

Hot Electron Transport

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Toward Electronic Conductance Characterization of DNA Nucleotide Bases

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.121-123.1387 ◽

2007 ◽

Vol 121-123 ◽

pp. 1387-1390 ◽

Cited By ~ 2

Author(s):

Predrag S. Krstić ◽

Jack C. Wells ◽

Miguel Fuentes-Cabrera ◽

Dong Xu ◽

James Weifu Lee

Keyword(s):

Electron Transport ◽

Transport Theory ◽

Dna Bases ◽

Quantum Mechanical ◽

Gold Nanowires ◽

Electron Transport Properties ◽

Electronic Conductance ◽

Linear Transport Theory ◽

Nucleotide Bases

We calculate electron-transport properties within equilibrium, linear transport theory through the DNA nucleotide bases spanning two gold nanowires. Our quantum mechanical calculations show that single configurations of DNA bases A, C, T, and G have significantly different charge conductance characteristics. This result is consistent with the notion that it is possible to read the nucleotide base sequence on an individual DNA heteropolymer which is moving through a gap between electrically biased nanoelectrodes by measuring the changes in the electron-transport conductance.

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