Dc Magnetron Reactive Sputtering of Low Stress Ain Piezoelectric Thin Films for Mems Application

1998 ◽  
Vol 546 ◽  
Author(s):  
Peter Hsieh ◽  
Rafael Reif ◽  
Brian Cunningham
Keyword(s):  
Thin Films ◽  
Integrated Circuit ◽  
Electromechanical Coupling ◽  
Film Deposition ◽  
Film Stress ◽  
Silicon Substrates ◽  
Mems Devices ◽  
Film Property ◽  
Deposition Parameters ◽  
Mems Fabrication

AbstractMany MEMS devices require piezoelectric excitation and readout to actuate and sense motion of mechanical structures. Aluminum nitride is advantageous for MEMS fabrication because it is compatible with silicon integrated circuit foundry impurity contamination requirements, can be deposited at low temperatures, provides a high piezoelectric coefficient, and is easily patterned using conventional photolithographic techniques. In this work, AIN thin films were deposited on silicon substrates for use in a MEMS silicon membrane ultrasonic resonator. The ultrasonic resonator is configured as a gravimetric sensing device for chemical detection. Issues of concern with regard to device performance and yield include the maximization of the electromechanical coupling constant (k2), film stress control, and film uniformity; these issues were addressed through a central composite design set of experiments to resolve the film property responses as a function of the deposition parameters. Film characterization was conducted with x-ray diffraction, spectroscopic ellipsometry, and surface profilometry. Optimization of film deposition parameters improved sensor performance and enabled further device miniaturization with the use of thinner films.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

scholarly journals An Integrated Cleanroom Process for the Vapor Phase Deposition of Large-Area Zeolitic Imidazolate Framework Thin Films

2019 ◽  
Author(s):  
Alexander John Cruz ◽  
Ivo Stassen ◽  
Mikhail Krishtab ◽  
Kristof Marcoen ◽  
Timothée Stassin ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Ex Situ ◽  
Test Case ◽  
Large Area ◽  
Zeolitic Imidazolate Framework ◽  
Deposition Parameters ◽  
The Impact

<p>Robust and scalable thin film deposition methods are key to realize the potential of metal-organic frameworks (MOFs) in electronic devices. Here, we report the first integration of the chemical vapor deposition (CVD) of MOF coatings in a custom reactor within a cleanroom setting. As a test case, the MOF-CVD conditions for ZIF-8 are optimized to enable smooth, pinhole-free, and uniform thin films on full 200 mm wafers under mild conditions. The single-chamber MOF-CVD process and the impact of the deposition parameters are elucidated <i>via</i> a combination of <i>in situ </i>monitoring and <i>ex situ</i> characterization. The resulting process guidelines will pave the way for new MOF-CVD formulations and a plethora of MOF-based devices.<br></p>

A Detailed Study of the Synthesis of Bismuth Thin Films by PVD-Methods and their Structural Characterization

2012 ◽  
Vol 1477 ◽  
Author(s):  
Enrique Camps ◽  
Sandra E. Rodil ◽  
J. Antonio Salas ◽  
Horacio V. Estrada
Keyword(s):  
Thin Films ◽  
Physical Vapor Deposition ◽  
Thermal Evaporation ◽  
Synthesis Method ◽  
Crystallographic Structure ◽  
Silicon Substrates ◽  
Flexible Films ◽  
Deposition Parameters ◽  
Sputtering Power ◽  
Complete Study

ABSTRACTA comprehensive and rather complete study for the synthesis of Bismuth thin-films using physical vapor deposition (PVD) techniques aimed at identifying key features of their crystallographic structure and morphology/topography, as a function of the synthesis method is presented. These films were deposited on oxidized and non-oxidized polished silicon substrates, glass-plates and polyimide flexible films, by thermal evaporation (resistive boat and e-beam) DC- and RF-magnetron assisted sputtering, and pulsed laser (ablation) deposition (PLD). The synthesis was performed controlling the main deposition parameters of these methods.XRD-spectra conclusively indicate that the films can be preferentially oriented along the [003] or [012] Bi-structure’s directions, depending on the source-to- substrate (STS)-distance, sputtering power, substrate’s temperature and PLD ion’s kinetic energy. It is also concluded that a relatively short STS-distance results in a rather polycrystalline structure, near independent to the used sputtering power.

Identification of the Failure Mechanism of a Thin Film on a Thick Substrate by Means of Synchrotron X-Ray Topography Combined with Transmission Electron Microscopy

1987 ◽  
Vol 108 ◽  
Author(s):  
D. Goyal ◽  
W. Ng ◽  
A. H. King ◽  
J. C. Bilello
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Film Stress ◽  
Silicon Substrates ◽  
X Ray ◽  
Transmission Electron ◽  
Thick Substrate

ABSTRACTWe have used synchrotron x-ray topographic techniques to study the stresses in thin films formed upon silicon substrates either by evaporation or sputtering. It is found that the film stress generally decreases with increasing film thickness for evaporated films, but film delamination occurs at a well defined film thickness. Transmission electron microscope studies have been performed on the same specimens in order to reveal what mechanisms are involved with the delamination of the films.

Zirconia Thin-Films for Toughened Ceramics

2006 ◽  
Author(s):  
J. Y. Thompson ◽  
B. R. Stoner ◽  
J. R. Piascik
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Film Deposition ◽  
Film Stress ◽  
Grain Structure ◽  
Ambient Conditions ◽  
High Temperature Stability ◽  
Stabilized Zirconia ◽  
Water Vapor Absorption ◽  
Absorption Mechanism

Partially-stabilized zirconia (PSZ) has been studied extensively, due to its high temperature stability and stress-induced tetragonal to monoclinic phase transformation, which can elicit enhanced fracture resistance. Applications include thermal barriers, high-k dielectric gate oxides, biomedical components, and solid oxide fuel cells, where not only temperature is a factor, but aggressive environments can compromise function. Research has advanced from using PSZ in bulk form to creating thin films that utilize the same material properties. PSZ, where the high temperature tetragonal phase is stabilized at room temperature, offers the ability to create a thin film that takes advantage of the unique properties of zirconia by improving the fracture behavior of brittle substrates. Yttria (3 mol%) stabilized zirconia (YSZ) can be deposited by radio frequency (rf) magnetron sputtering under varying deposition parameters to produce thin films with unique microstructures and properties. Most YSZ films are characterized by a columnar grain structure, and it has been found that inter-crystalline porosity and overall film density can be controlled by applying differing substrate bias during film deposition. Film stress can subsequently be manipulated over a broad range. Initial film stresses ranging from approximately 100 MPa tensile to 200 MPa compressive have been reproducibly produced. It has also been found that exposure of YSZ thin films containing measurable inter-granular porosity (10–100Å) to ambient conditions (25°C, 75% relative humidity) leads to a substantial increase in compressive stress of films (as much as 100 MPa). Thermal reversibility of this environmental aging effect suggests a water vapor absorption mechanism that might be tailored to specific applications.

scholarly journals An Integrated Cleanroom Process for the Vapor Phase Deposition of Large-Area Zeolitic Imidazolate Framework Thin Films

2019 ◽  
Author(s):  
Alexander John Cruz ◽  
Ivo Stassen ◽  
Mikhail Krishtab ◽  
Kristof Marcoen ◽  
Timothée Stassin ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Ex Situ ◽  
Test Case ◽  
Large Area ◽  
Zeolitic Imidazolate Framework ◽  
Deposition Parameters ◽  
The Impact

<p>Robust and scalable thin film deposition methods are key to realize the potential of metal-organic frameworks (MOFs) in electronic devices. Here, we report the first integration of the chemical vapor deposition (CVD) of MOF coatings in a custom reactor within a cleanroom setting. As a test case, the MOF-CVD conditions for ZIF-8 are optimized to enable smooth, pinhole-free, and uniform thin films on full 200 mm wafers under mild conditions. The single-chamber MOF-CVD process and the impact of the deposition parameters are elucidated <i>via</i> a combination of <i>in situ </i>monitoring and <i>ex situ</i> characterization. The resulting process guidelines will pave the way for new MOF-CVD formulations and a plethora of MOF-based devices.<br></p>

Stress of Tio2 Thin Films Produced by Different Deposition Techniques

1993 ◽  
Vol 308 ◽  
Author(s):  
C. Ottermann ◽  
J. Otto ◽  
U. Jeschkowski ◽  
O. Anderson ◽  
M. Heming ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Film Stress ◽  
Process Conditions ◽  
Tio2 Thin Films ◽  
Structure Relaxation ◽  
Glass Substrates ◽  
Relaxation Effects

ABSTRACTStress in thin films has been measured very precisely (< 10 MPa) by analysing the curvature of quartz glass substrates before and after film deposition by means of a ZYGO Mark IV interferometer system. TiO2 films of approximately 100 nm thickness were prepared by reactive evaporation (RE), reactive ion plating (IP), plasma impulse chemical vapor deposition (PICVD) and spin coating (SC). Large variations in stress are found for different coating techniques and deposition conditions. This can be correlated to differences in optical properties, film density and crystalline structure. Relaxation effects and the influence of thermal treatment are also studied. The crystallization of amorphous TiO2 during heat treatment is accompanied by significant changes in film stress. The crystal size and morphology of TiO2 films after heat treatment strongly depend on the deposition technique and process conditions.

Stress and Stability of Sputter Deposited A-15 and BCC Crystal Structure Tungsten Thin Films

1997 ◽  
Vol 472 ◽  
Author(s):  
M. J. O'keefe ◽  
C. E. Stutz
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Stress Measurement ◽  
Thermal Studies ◽  
Film Stress ◽  
Thin Film Stress ◽  
Deposition Parameters ◽  
Magnetron Sputter Deposition ◽  
Series Of Experiments ◽  
Sputter Deposited

ABSTRACTMagnetron sputter deposition was used to fabricate body centered cubic (bec) and A-15 crystal structure W thin films. Previous work demonstrated that the as-deposited crystal structure of the films was dependent on the deposition parameters and that the formation of a metastable A-15 structure was favored over the thermodynamically stable bec phase when the films contained a few atomic percent oxygen. However, the A-15 phase was shown to irreversibly transform into the bec phase between 500°C and 650°C and that a significant decrease in the resistivity of the metallic films was measured after the transformation. The current investigation of 150 nm thick, sputter deposited A-15 and bec tungsten thin films on silicon wafers consisted of a series of experiments in which the stress, resistivity and crystal structure of the films was measured as a function of temperature cycles in a Flexus 2900 thin film stress measurement system. The as-deposited film stress was found to be a function of the sputtering pressure and presputter time; under conditions in which the as-deposited stress of the film was ∼ 1.5 GPa compressive delamination of the W film from the substrate was observed. Data from the thermal studies indicated that bec film stress was not affected by annealing but transformation of the A-15 structure resulted in a large tensile increase in the stress of the film, regardless of the as-deposited stress of the film. In several instances, complete transformation of the A-15 structure into the bec phase resulted in ≥ 1 GPa tensile increase in film stress.

Effect of Deposition Parameters on Crystallization of RF Magnetron Sputtered BST Thin Films

2007 ◽  
Vol 336-338 ◽  
pp. 79-82 ◽  
Author(s):  
T.J. Zhang ◽  
S.Z. Li ◽  
B.S. Zhang ◽  
W.H. Huang ◽  
R.K. Pan
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Bst Thin Films ◽  
Deposition Parameters ◽  
Higher Temperature ◽  
Sputtering Pressure ◽  
Sem Morphology

Ba0.65Sr0.35TiO3 (BST) thin films on p-silicon substrates were deposited by radio frequency magnetron sputtering. The effects of the deposition parameters on the crystallization and microstructure of BST thin films were investigated by X-ray diffraction and filed emission electron microscopy, respectively. The crystallization behavior of these films was apparently affected by the substrate temperature, annealing temperature and sputtering pressure. The improved crystallization can be observed for BST thin films that deposited at higher temperature. The dominant X-ray diffraction peaks became sharper and more intense as the annealing temperature increased. BST thin films deposited at high sputtering pressure of 3.9 Pa exhibited the (110) + (200) preferred orientation. Possible correlations of the crystallization with the sputtering pressure were discussed. The SEM morphology indicated the film was small grains and smooth.

Evaluation of elastic modulus and hardness of thin films by nanoindentation

2004 ◽  
Vol 19 (10) ◽  
pp. 3076-3080 ◽  
Author(s):  
Yeon-Gil Jung ◽  
Brian R. Lawn ◽  
Mariusz Martyniuk ◽  
Han Huang ◽  
Xiao Zhi Hu
Keyword(s):  
Thin Films ◽  
Elastic Modulus ◽  
Power Law ◽  
Silicon Substrates ◽  
Film Property ◽  
Film Properties ◽  
Sigmoidal Functions ◽  
Film Substrate ◽  
Simple Equations ◽  
Indenter Penetration

Simple equations are proposed for determining elastic modulus and hardness properties of thin films on substrates from nanoindentation experiments. An empirical formulation relates the modulus E and hardness H of the film/substrate bilayer to corresponding material properties of the constituent materials via a power-law relation. Geometrical dependence of E and H is wholly contained in the power-law exponents, expressed here as sigmoidal functions of indenter penetration relative to film thickness. The formulation may be inverted to enable deconvolution of film properties from data on the film/substrate bilayers. Berkovich nanoindentation data for dense oxide and nitride films on silicon substrates are used to validate the equations and to demonstrate the film property deconvolution. Additional data for less dense nitride films are used to illustrate the extent to which film properties may depend on the method of fabrication.

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