Stress of Tio2 Thin Films Produced by Different Deposition Techniques

1993 ◽  
Vol 308 ◽  
Author(s):  
C. Ottermann ◽  
J. Otto ◽  
U. Jeschkowski ◽  
O. Anderson ◽  
M. Heming ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Film Stress ◽  
Process Conditions ◽  
Tio2 Thin Films ◽  
Structure Relaxation ◽  
Glass Substrates ◽  
Relaxation Effects

ABSTRACTStress in thin films has been measured very precisely (< 10 MPa) by analysing the curvature of quartz glass substrates before and after film deposition by means of a ZYGO Mark IV interferometer system. TiO2 films of approximately 100 nm thickness were prepared by reactive evaporation (RE), reactive ion plating (IP), plasma impulse chemical vapor deposition (PICVD) and spin coating (SC). Large variations in stress are found for different coating techniques and deposition conditions. This can be correlated to differences in optical properties, film density and crystalline structure. Relaxation effects and the influence of thermal treatment are also studied. The crystallization of amorphous TiO2 during heat treatment is accompanied by significant changes in film stress. The crystal size and morphology of TiO2 films after heat treatment strongly depend on the deposition technique and process conditions.

Effect of Heat Treatment on Optical Properties of Cold Spray TiO2 Coated Glass

2009 ◽  
Vol 79-82 ◽  
pp. 803-806
Author(s):  
Jing Kai Yang ◽  
Hong Li Zhao ◽  
Yan Li Liu ◽  
Fu Cheng Zhang
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Optical Properties ◽  
Cold Spray ◽  
Anatase Phase ◽  
Float Glass ◽  
Light Transmittance ◽  
Tio2 Thin Films ◽  
Coated Glass ◽  
Glass Substrates

The cold spray TiO2 thin films were deposited on 5mm-thick float glass substrates using the sol containing nano-anatase TiO2. The effects of different heat treatment temperatures on optical properties were discussed. The properties of xerogel powder were analyzed using TG-DSC, the morphology and structure of TiO2 thin films were characterized by FESEM and XRD, the transmittance and absorption of TiO2 coated glass were investigated by UV-vis spectrophotometer. The results reveal that TiO2 in the film is still anatase phase after heat treatment at 350°C and 500°C. With the annealing temperatures increasing from 20°C to 500°C, the average crystal size increases just from 21.4 nm to 23.9nm, UV absorption of TiO2 coated glass increases from 2.2 to 2.7, visible light transmittance is high to about 80%.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Preparation and characterization of V2O5 doped SiO2-TiO2 thin films

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Gel Technique

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.

Developing Monolithically Integrated CdTe Devices Deposited by AP-MOCVD

2013 ◽  
Vol 1538 ◽  
pp. 275-280
Author(s):  
S.L. Rugen-Hankey ◽  
V. Barrioz ◽  
A. J. Clayton ◽  
G. Kartopu ◽  
S.J.C. Irvine ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Aluminosilicate Glass ◽  
Organic Chemical ◽  
Large Area ◽  
Monolithically Integrated ◽  
Glass Substrates ◽  
Laser Scribing

ABSTRACTThin film deposition process and integrated scribing technologies are key to forming large area Cadmium Telluride (CdTe) modules. In this paper, baseline Cd1-xZnxS/CdTe solar cells were deposited by atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD) onto commercially available ITO coated boro-aluminosilicate glass substrates. Thermally evaporated gold contacts were compared with a screen printed stack of carbon/silver back contacts in order to move towards large area modules. P2 laser scribing parameters have been reported along with a comparison of mechanical and laser scribing process for the scribe lines, using a UV Nd:YAG laser at 355 nm and 532 nm fiber laser.

Metal-organic chemical vapor deposition of ZrO2 films using Zr(thd)4 as precursors

1994 ◽  
Vol 9 (7) ◽  
pp. 1721-1727 ◽  
Author(s):  
Jie Si ◽  
Seshu B. Desu ◽  
Ching-Yi Tsai
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Deposition Rates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposited Films

Synthesis of zirconium tetramethylheptanedione [Zr(thd)4] was optimized. Purity of Zr(thd)4 was confirmed by melting point determination, carbon, and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). By using Zr(thd)4, excellent quality ZrO2 thin films were successfully deposited on single-crystal silicon wafers by metal-organic chemical vapor deposition (MOCVD) at reduced pressures. For substrate temperatures below 530 °C, the film deposition rates were very small (⋚1 nm/min). The film deposition rates were significantly affected by (i) source temperature, (ii) substrate temperature, and (iii) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to a high-temperature post-deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO2 films. The model predicated the deposition rates well for various conditions in the hot wall reactor.

A Study on the Effect of Process Parameters on Surface Topography of Al Thin Films on Various Substrates Using AFM

2011 ◽  
Vol 383-390 ◽  
pp. 903-908
Author(s):  
S. Shanmugan ◽  
D. Mutharasu ◽  
Z. Hassan ◽  
H. Abu. Hassan
Keyword(s):  
Thin Films ◽  
Surface Topography ◽  
Flow Rate ◽  
Gas Flow ◽  
Process Conditions ◽  
Gas Flow Rate ◽  
Glass Substrates ◽  
Sputtering Power ◽  
Large Particles ◽  
Ar Gas

Al thin films were prepared over different substrates at various process conditions using DC sputtering. The surface topography of all prepared films was examined using AFM technique. Very smooth, uniform and dense surface were observed for Al films coated over Glass substrates. The observed particle size was nano scale (20 -70 nm) for Glass substrates. Sputtering power showed immense effect on surface roughness with respective to Ar gas flow rate. Noticeable change on surface with large particles was observed in Copper substrates at various sputtering power and gas flow rate.

Sign in / Sign up

Export Citation Format

Share Document