A Detailed Study of the Synthesis of Bismuth Thin Films by PVD-Methods and their Structural Characterization

2012 ◽  
Vol 1477 ◽  
Author(s):  
Enrique Camps ◽  
Sandra E. Rodil ◽  
J. Antonio Salas ◽  
Horacio V. Estrada
Keyword(s):  
Thin Films ◽  
Physical Vapor Deposition ◽  
Thermal Evaporation ◽  
Synthesis Method ◽  
Crystallographic Structure ◽  
Silicon Substrates ◽  
Flexible Films ◽  
Deposition Parameters ◽  
Sputtering Power ◽  
Complete Study

ABSTRACTA comprehensive and rather complete study for the synthesis of Bismuth thin-films using physical vapor deposition (PVD) techniques aimed at identifying key features of their crystallographic structure and morphology/topography, as a function of the synthesis method is presented. These films were deposited on oxidized and non-oxidized polished silicon substrates, glass-plates and polyimide flexible films, by thermal evaporation (resistive boat and e-beam) DC- and RF-magnetron assisted sputtering, and pulsed laser (ablation) deposition (PLD). The synthesis was performed controlling the main deposition parameters of these methods.XRD-spectra conclusively indicate that the films can be preferentially oriented along the [003] or [012] Bi-structure’s directions, depending on the source-to- substrate (STS)-distance, sputtering power, substrate’s temperature and PLD ion’s kinetic energy. It is also concluded that a relatively short STS-distance results in a rather polycrystalline structure, near independent to the used sputtering power.

Influence of the Deposition Parameters on the Electrical and Mechanical Properties of Physically Vapor-Deposited Iridium and Rhodium Thin Films

1999 ◽  
Vol 594 ◽  
Author(s):  
Ilan Golecki ◽  
Margaret Eagan
Keyword(s):  
Thin Films ◽  
Sheet Resistance ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
Process Window ◽  
Process Conditions ◽  
Silicon Substrates ◽  
Deposition Parameters ◽  
Thin Chromium

AbstractIridium and rhodium thin films have been formed by e-gun physical vapor deposition on thin-chromium-coated, thermally-oxidized, silicon substrates. Cr, Ir and Rh deposition rates and substrate temperature during deposition were measured and controlled. The effects of the latter deposition parameters on the sheet resistance and stress of the Ir and Rh films are presented and it is demonstrated that both stress and sheet resistance can be desirably minimized by proper choice of the process conditions. The resistivity of these Rh and Ir thin films has been measured at room temperature. Rh can be formed in a wider process window than Ir. Rh films with Rsh = 0.1 Ω/square have been obtained at a thickness of 0.6 ¼m.

Microstructural Study of Thin Films CuFe Obtained by Thermal Evaporation of Nanostructured Milled Powder

2017 ◽  
Vol 47 ◽  
pp. 71-78
Author(s):  
H. Mechri ◽  
Ahmed Haddad ◽  
M. Zergoug ◽  
Mohammed Azzaz
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Physical Vapor Deposition ◽  
Thermal Evaporation ◽  
Supersaturated Solid Solution ◽  
Milled Powder ◽  
Mechanically Alloyed ◽  
Glass Substrates ◽  
Milling Duration ◽  
Tungsten Boat

Commercial copper and iron powders were used as starting materials. These powders were mechanically alloyed to obtain Cu(100-x) Fex supersaturated mixture. The milling duration was chosen in such a way as to obtain a nanostructured mixture and to form a supersaturated solid solution of CuFe; the powder mixture was used to deposit CuFe on a glass substrate. The elaboration of our films has been carried out using thermal evaporation process (physical vapor deposition) under 1 × 10-6 mbar vacuum from an electrically heated tungsten boat, using the supersaturated solid solution Cu(100-x) Fex powder obtained by mechanical alloying. The films deposition has been done on glass substrates. In this study, we present the composition effect on the structural and magnetic proprieties of Cu(100-x) Fex powder and thin films. The chemical composition, structural and magnetic proprieties of milled powders and thin films were examined by SEM, TEM, XRD, XRF and VSM.

scholarly journals Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

2017 ◽  
Vol 2017 ◽  
pp. 1-4 ◽  
Author(s):  
Swati Arora ◽  
Vivek Jaimini ◽  
Subodh Srivastava ◽  
Y. K. Vijay
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Bismuth Telluride ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Scanning Electron

Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth.

The Influence of Electrodes Deposition on the Interface and Dielectric Characteristics of Polymer Gate for Thin Films Transistors

2017 ◽  
Vol 1143 ◽  
pp. 227-232
Author(s):  
Elena Emanuela Herbei ◽  
Michael P.M. Jank ◽  
Susanne Oertel ◽  
Laurentiu Frangu ◽  
Viorica Mușat
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Deposition Rate ◽  
Physical Vapor Deposition ◽  
Metal Electrode ◽  
Electrical Performance ◽  
Pmma Film ◽  
Pmma Layer ◽  
Deposition Parameters ◽  
Dielectric Performance

The paper presents some results on the effect of the metal electrode deposition on the electrical performance of amorphous polymthylmetacrylate (PMMA) thin films, measured in a MIM structure consisting of metal (Al)-insulator (PMMA)-metal (Ta). Aluminium (Al) electrode was deposited by physical vapor deposition method (PVD) on the top of PMMA film with the deposition rate of 5 and 10Å/s. The effect of aluminium deposition rate and post deposition annealing temperature on the morphology of the interface between Al electrode (100 or 300 nm thick) and PMMA thin film (40 or 70 nm thick) has been investigated by cross-section scanning electron microscopy (SEM). Based on SEM data, I-V characteristic measurements and dielectric constant values of insulating films, the deposition parameters of Al top-electrode was optimised. Our results showed that when the deposition of the Al electrode take place at a rate of 10 Å/s, no inter-diffusion or interfacial reaction at the interface between Al electrode and PMMA films were observed and the best delectric parameters of PMMA thin film were measured, which led to the best dielectric performance of PMMA layer in TFT configuration.

Annealing and Deposition Parameters Influence on the Performance of AlN Thin Films

2013 ◽  
Vol 575-576 ◽  
pp. 441-445
Author(s):  
Tai Long Gui ◽  
Si Da Jiang
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Refractive Index ◽  
Total Pressure ◽  
Annealing Temperature ◽  
Elliptical Polarization ◽  
Radio Frequency Magnetron Sputtering ◽  
Temperature Changes ◽  
Deposition Parameters ◽  
Sputtering Power

Using the radio frequency magnetron sputtering that directly bombardment A1N target under different sputtering-power and total pressure to deposit the A1N thin films. The crystal structure, composition, surface and refractive index of the thin films were studied by XRD, SEM, AFM and elliptical polarization instrument. The results show that the surface and refractive of the thin films strongly depends on the sputtering-power and total pressure,the good uniformity and smoothness is found at 225 W, Ar flow ratio 5.0 LAr/sccm, substrate temperature 100°Cand 1.2 Pa. All film thickness are from 60 to 80nm, and the highest N/Al mole ratio reach to 0.83.The crystal structure of the as-deposited thin-films is amorphous，then it transforms from blende structure to wurtzite structure as the rapid thermal annealing(RTA) temperature changes from 600 to 1200°C. The refractive index also increases with the RTA temperature it is increasing significantly from 800 to 1000°C. When the Annealing temperature at 1000°C, we get the best uniformity and smoothness of the surface of the film.

Surface Characteristics of Ni-Mn-Fe-Ga Sputtered Thin Films

2011 ◽  
Vol 194-196 ◽  
pp. 2290-2295
Author(s):  
Hai Bo Wang ◽  
Jin Yong Xu ◽  
Wei Cai
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Average Particle Size ◽  
Surface Characteristics ◽  
Crystallographic Structure ◽  
Chemical Compositions ◽  
Average Particle ◽  
Alloy Thin Film ◽  
X Ray ◽  
Sputtering Power

The Ni-Mn-Fe-Ga shape memory alloy thin film was deposited onto silicon substrates by using radio-frequency (R.F.) magnetron sputtering technique. Chemical composition, surface morphology and crystallographic structure were systematically investigated by means of X-ray fluorescence (XRF), atomic force microscope (AFM) and X-ray diffraction (XRD). The experimental results show that the magnetron sputtering process has remarkable influence on the chemical compositions and surface characteristics of Ni-Mn-Fe-Ga alloy thin films. As the sputtering power ranging between 245W and 405W, Ni content of the thin films decreases with the sputtering power increasing, whereas Mn and Fe contents increase with increasing the sputtering power and Ga content almost keep a constant. The surface roughness and the average particle size of thin films increase with the increase of Ar working pressure and sputtering power. The film deposited at room temperature has a cubic L21 structure.

Dc Magnetron Reactive Sputtering of Low Stress Ain Piezoelectric Thin Films for Mems Application

1998 ◽  
Vol 546 ◽  
Author(s):  
Peter Hsieh ◽  
Rafael Reif ◽  
Brian Cunningham
Keyword(s):  
Thin Films ◽  
Integrated Circuit ◽  
Electromechanical Coupling ◽  
Film Deposition ◽  
Film Stress ◽  
Silicon Substrates ◽  
Mems Devices ◽  
Film Property ◽  
Deposition Parameters ◽  
Mems Fabrication

AbstractMany MEMS devices require piezoelectric excitation and readout to actuate and sense motion of mechanical structures. Aluminum nitride is advantageous for MEMS fabrication because it is compatible with silicon integrated circuit foundry impurity contamination requirements, can be deposited at low temperatures, provides a high piezoelectric coefficient, and is easily patterned using conventional photolithographic techniques. In this work, AIN thin films were deposited on silicon substrates for use in a MEMS silicon membrane ultrasonic resonator. The ultrasonic resonator is configured as a gravimetric sensing device for chemical detection. Issues of concern with regard to device performance and yield include the maximization of the electromechanical coupling constant (k2), film stress control, and film uniformity; these issues were addressed through a central composite design set of experiments to resolve the film property responses as a function of the deposition parameters. Film characterization was conducted with x-ray diffraction, spectroscopic ellipsometry, and surface profilometry. Optimization of film deposition parameters improved sensor performance and enabled further device miniaturization with the use of thinner films.

Effect of Deposition Parameters on Crystallization of RF Magnetron Sputtered BST Thin Films

2007 ◽  
Vol 336-338 ◽  
pp. 79-82 ◽  
Author(s):  
T.J. Zhang ◽  
S.Z. Li ◽  
B.S. Zhang ◽  
W.H. Huang ◽  
R.K. Pan
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Bst Thin Films ◽  
Deposition Parameters ◽  
Higher Temperature ◽  
Sputtering Pressure ◽  
Sem Morphology

Ba0.65Sr0.35TiO3 (BST) thin films on p-silicon substrates were deposited by radio frequency magnetron sputtering. The effects of the deposition parameters on the crystallization and microstructure of BST thin films were investigated by X-ray diffraction and filed emission electron microscopy, respectively. The crystallization behavior of these films was apparently affected by the substrate temperature, annealing temperature and sputtering pressure. The improved crystallization can be observed for BST thin films that deposited at higher temperature. The dominant X-ray diffraction peaks became sharper and more intense as the annealing temperature increased. BST thin films deposited at high sputtering pressure of 3.9 Pa exhibited the (110) + (200) preferred orientation. Possible correlations of the crystallization with the sputtering pressure were discussed. The SEM morphology indicated the film was small grains and smooth.

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