Investigation of PZT//LSCO/IPT//Aerogel Thin Film Composites for Uncooled Pyroelectric Ir Detectors

1998 ◽  
Vol 541 ◽  
Author(s):  
P.G. Clem ◽  
B.A. Tuttle ◽  
J.A. Ruffner ◽  
C.J. Brinker ◽  
R.W. Schwartz ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Properties ◽  
Infrared Detector ◽  
Dip Coating ◽  
Film Structure ◽  
Pyroelectric Coefficient ◽  
Film Stress ◽  
Ir Detectors ◽  
Thin Film Stress

AbstractA monolithic thin film structure for uncooled pyroelectric infrared detector arrays was developed to integrate thermally isolated Pb(Zr,Ti)O3-based thin films on silicon, with a low thermal conductivity, aerogel thin film interlayer. Aerogel thin films of 0.4-1.2μm thickness and 70-85% porosity were deposited on silicon substrates by dip coating to form a thermal isolation layer. 200-400nm thick Pb(Zr0.4Ti0.6)O3 films deposited on (La,Sr)CoO3[LSCO]//Pt electrodes atop these aerogel films displayed a remanent polarization Pr = 28μ C/cm2, pyroelectric coefficient p = 30 nC/cm2K, and calculated noise equivalent temperature difference NETD = 0.07°C. Processing of Pb(Zr,Ti)O3 thin films atop the aerogel interlayer structure required modifications to deposition and heat treatment methods to minimize tensile stress accumulation. Effects of thermal processing and thin film stress state on ferroelectric properties are also reported.

Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2711-2716 ◽  
Author(s):  
V. Vasilyev ◽  
J. Cetnar ◽  
B. Claflin ◽  
G. Grzybowski ◽  
K. Leedy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pyroelectric Coefficient ◽  
X Ray Diffraction ◽  
Ir Detectors ◽  
Pyroelectric Properties ◽  
X Ray ◽  
Sensing Applications ◽  
Pyroelectric Material ◽  
Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

scholarly journals Deviation in Nano-Mechanical Properties of Ceramic Nano Composite Thin Films

2017 ◽  
Vol 14 (1) ◽  
pp. 01-04
Author(s):  
A. S. Bhattacharyya ◽  
R. P. Kumar
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Strain Hardening ◽  
Hard Coatings ◽  
Film Stress ◽  
Nano Composite ◽  
Thin Film Stress ◽  
Morphological Patterns

Ceramic hard Coatings based on Si, C , N, Ti and B were developed using magnetron sputtering, applicable for protecting the underlying substrate. Different morphological patterns were observed on the coating surface due to sputtering. Nanoindentation was used to determine the hardness and modulus of the coatings. The deviations in H and E values were attributed to indentation positions, thin film stress and anisotropy. Evidence of strain hardening was found during loading.

Growth, Structure, and Thin Film Stress in TiAl AND Ti3Al FILMS

1993 ◽  
Vol 317 ◽  
Author(s):  
M. Chinmulgund ◽  
R. B. Inturi ◽  
J. A. Barnard
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Hexagonal Structure ◽  
Film Stress ◽  
Dc Magnetron Sputtering ◽  
Bulk Materials ◽  
Growth Structure ◽  
Thin Film Stress

ABSTRACTThin films of Ti, Al, TiAl and Ti3Al were deposited by dc magnetron sputtering onto 2” dia. oxidized Si<111> wafers and their mechanical properties were studied by measuring the internal stress in the films. Ti and Ti3Al films show hexagonal structure with preferred orientation in the (0002) direction. TiAl is tetragonal, nanocrystalline, and (111) oriented; Al is random fee polycrystalline in nature. Young's Modulii of thin films of these materials were calculated from the stress temperature plots. The E values of TiAI and Ti3Al thin films were found to be significantly higher than those of the bulk Materials.

PZT thin films grown by multi-target sputtering: Analysis of thin film stress

1998 ◽  
Vol 21 (1-4) ◽  
pp. 461-467 ◽  
Author(s):  
R. Bruchhaus ◽  
D. Pitzer ◽  
R. Primig ◽  
M. Schreiter ◽  
W. Wersing
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Stress ◽  
Pzt Thin Films ◽  
Thin Film Stress

Formation Kinetics and Thin Film Stress of Tin Containing Intermetallic Compounds

1992 ◽  
Vol 264 ◽  
Author(s):  
Chin-Jong Chan ◽  
Jei-Wei Chang ◽  
Leo A. Chin
Keyword(s):  
Thin Film ◽  
Stress State ◽  
Intermetallic Compounds ◽  
Elevated Temperatures ◽  
Film Structure ◽  
Film Stress ◽  
Structure Evolution ◽  
Material System ◽  
Thin Film Stress ◽  
Formation Kinetics

AbstractThin film reactions and its influence on mechanical stress have been investigated in Cr/Cu/Sn and Cr/Ni/Sn multilayer structures. Thin film stresses of different intermetallic compounds in each material system were evaluated using substrate bending technique. Stress state in the thin film structures was round directly related to formation kinetics and thermal properties of intermetallics. In Cu-Sn system, a large internal stress increase in tension was generally observed after being heat treated at high temperatures. In Ni-Sn systems, formation of intermetallics is a relatively slow reaction at elevated temperatures as compared to that of Cu-Sn samples. Contrary to that of Cu-Sn system, formation of Ni-Sn intermetallics causes a decrease in stress in the thin film structure. The correlation of thin film stress state and the structure evolution at the interface is studied and discussed in details.

Using Thin Film Stress for Nanoscaled Sensors

2010 ◽  
Vol 638-642 ◽  
pp. 2028-2033
Author(s):  
Seid Jebril ◽  
Yogendra K. Mishra ◽  
Mady Elbahri ◽  
Lorenz Kienle ◽  
Henry Greve ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Hydrogen Adsorption ◽  
Field Effect Transistors ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Film Stress ◽  
Special Focus ◽  
Free Standing ◽  
Thin Film Stress

Thin film stress is often seen as an unwanted effect in micro- and nanostructures. Since recent years, we could employ thin film stress as a useful tool to create nanowires. By creating stress at predetermined breaking points, e.g., in microstructured photo resist thin films, cracks occur on the nanoscale in a well defined and reproducible manner [ ]. By using those as a simple mask for thin film deposition, nanowires can be created. More recently this fabrication scheme could be improved by utilizing delamination of the thin film, in order to obtain suitable shadow masks for thin film deposition in vacuum [ ]. Now, these stress based nanowires can be integrated in microelectronic devices and used as field effect transistors or as hydrogen sensors [ ]. For the functional part of the sensor, it was proposed that thin film stress created by hydrogen adsorption in the nanowire is the driving force. In terms of function, thin films can be also applied on free standing nanoscale whiskers or wires to modify their mechanical features or adding additional functionality. As a second example for the utilization of thin film stress, recent experiments on a piezoelectric and magnetostrictive material combination will be presented. These piezoelectric-magnetostrictive nano-composites are potential candidates for novel magnetic field sensors [ ]. In these composites the magnetostriction will be transferred to the piezoelectric component, resulting in a polarization of the piezoelectric material, that can be used as the sensor signal. The results of two different composite layouts will be presented and discussed with a special focus on the comparison between classical macroscopic composites and the novel nanocomposites.

Stress Stability of Poly-SiGe and Various Oxide Films in Humid Environments

2004 ◽  
Vol 854 ◽  
Author(s):  
Carrie W. Low ◽  
Brian L. Bircumshaw ◽  
Tatiana Dorofeeva ◽  
Gelila Solomon ◽  
Tsu-Jae King ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stresses ◽  
Film Stress ◽  
Long Period ◽  
Thin Film Stress ◽  
Curvature Measurement ◽  
Average Residual ◽  
Layer Thin Film ◽  
Over Time

ABSTRACTThis paper presents the stress stability of thin films for MEMS structural and sacrificial layers. The average residual stresses of the thin films were monitored via wafer curvature measurement over a long period of time. Poly-Si, poly-SiGe, poly-Ge and thermally growth SiO2 films are found to be stable in humid environments. Moisture makes LPCVD and TEOS-based PECVD SiO2 films more compressive over time. Multi-layer thin film stress is modeled with the same methodology used to derive the Stoney Equation [1].

Magnetostriction and thin-film stress in high magnetization magnetically soft FeTaN thin films

1996 ◽  
Vol 79 (8) ◽  
pp. 5005 ◽  
Author(s):  
M. K. Minor ◽  
B. Viala ◽  
J. A. Barnard
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Stress ◽  
Thin Film Stress

PREPARATION AND CHARACTERIZATION OF POLYVINYL ALCOHOL THIN FILMS FOR ORGANIC THIN FILM TRANSISTORS AND BIOMEDICAL APPLICATIONS

2018 ◽  
Vol 5 (2) ◽  
pp. 16-18
Author(s):  
Chandar Shekar B ◽  
Ranjit Kumar R ◽  
Dinesh K.P.B ◽  
Sulana Sundar C ◽  
Sunnitha S ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Gravimetric Method ◽  
Dip Coating ◽  
Organic Thin Film Transistors ◽  
Poly Vinyl Alcohol ◽  
Organic Thin Film ◽  
Glass Substrates ◽  
Coating Method

Thin films of poly vinyl alcohol (PVA) were prepared on pre-cleaned glass substrates by Dip Coating Method. FTIR spectrum was used to identify the functional groups present in the prepared films. The vibrational peaks observed at 1260 cm-1 and 851 cm-1 are assigned to C–C stretching and CH rocking of PVA.The characteristic band appearing at 1432 cm-1 is assigned to C–H bend of CH2 of PVA. The thickness of the prepared thin films were measured by using an electronic thickness measuring instrument (Tesatronic-TTD20) and cross checked by gravimetric method. XRD spectra indicated the amorphous nature of the films.Surface morphology of the coated films was studied by scanning electron microscope (SEM). The surface revealed no pits and pin holes on the surface. The observed surface morphology indicated that these films could be used as dielectric layer in organic thin film transistors and as drug delivery system for wound healing.

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