scholarly journals Deviation in Nano-Mechanical Properties of Ceramic Nano Composite Thin Films

2017 ◽  
Vol 14 (1) ◽  
pp. 01-04
Author(s):  
A. S. Bhattacharyya ◽  
R. P. Kumar
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Strain Hardening ◽  
Hard Coatings ◽  
Film Stress ◽  
Nano Composite ◽  
Thin Film Stress ◽  
Morphological Patterns

Ceramic hard Coatings based on Si, C , N, Ti and B were developed using magnetron sputtering, applicable for protecting the underlying substrate. Different morphological patterns were observed on the coating surface due to sputtering. Nanoindentation was used to determine the hardness and modulus of the coatings. The deviations in H and E values were attributed to indentation positions, thin film stress and anisotropy. Evidence of strain hardening was found during loading.

Growth, Structure, and Thin Film Stress in TiAl AND Ti3Al FILMS

1993 ◽  
Vol 317 ◽  
Author(s):  
M. Chinmulgund ◽  
R. B. Inturi ◽  
J. A. Barnard
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Hexagonal Structure ◽  
Film Stress ◽  
Dc Magnetron Sputtering ◽  
Bulk Materials ◽  
Growth Structure ◽  
Thin Film Stress

ABSTRACTThin films of Ti, Al, TiAl and Ti3Al were deposited by dc magnetron sputtering onto 2” dia. oxidized Si<111> wafers and their mechanical properties were studied by measuring the internal stress in the films. Ti and Ti3Al films show hexagonal structure with preferred orientation in the (0002) direction. TiAl is tetragonal, nanocrystalline, and (111) oriented; Al is random fee polycrystalline in nature. Young's Modulii of thin films of these materials were calculated from the stress temperature plots. The E values of TiAI and Ti3Al thin films were found to be significantly higher than those of the bulk Materials.

Effect of Thickness and Annealing on Stress in Tantalum and Tantalum Nitride Thin Film Hard Coatings

1996 ◽  
Vol 436 ◽  
Author(s):  
Ranjana Saha ◽  
Rama B. Inturi ◽  
John A. Barnard
Keyword(s):  
Thin Film ◽  
Hard Coatings ◽  
Tantalum Nitride ◽  
Film Stress ◽  
Thin Film Stress ◽  
Stress Measuring ◽  
Long Term Performance ◽  
Term Performance ◽  
The Relationship

AbstractAn understanding of the relationship between stress and the other properties of thin films is extremely useful in the design of hard coatings for long term performance. In our earlier study, sputtered Ta and Ta(N) films were found to exhibit promising hard coating properties. For example, nano hardness as high as 30 GPa was observed in the nitride (pN2 = 0.100 mTorr) films. In this work, we study the variation in the stress in these films with respect to film thickness and annealing. Films in six different thicknesses (50, 250, 350, 500, 750, and 1000 nm) were deposited on oxide coated Si (111) wafers. Stresses in the films in the as-deposited state and as a function of temperature (300°C) were determined using a thin film stress measuring unit.

Measurement of Thin Film Mechanical Properties Using Nanoindentation

MRS Bulletin ◽  
1992 ◽  
Vol 17 (7) ◽  
pp. 28-33 ◽  
Author(s):  
G.M. Pharr ◽  
W.C. Oliver
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Hard Coatings ◽  
Optical Coatings ◽  
Small Scale ◽  
Nanometer Scale ◽  
Indentation Testing ◽  
Microelectronic Device ◽  
Convenient Means

One of the simplest ways to measure the mechanical properties of a thin film is to deform it on a very small scale. Because indentation testing with a sharp indenter is one convenient means to accomplish this, nanoindentation, or indentation testing at the nanometer scale, has become one of the most widely used techniques for measuring the mechanical properties of thin films. Other reasons for the popularity of nanoindentation stem from the ease with which a wide variety of mechanical properties can be measured without removing the film from its substrate and the ability to probe a surface at numerous points and spatially map its mechanical properties. The utility of the mapping capability is illustrated in Figure 1, which shows several small indentations made at selected points in a microelectronic device. The hardness and modulus of the device were determined at each point. In addition to microelectronics, nanoindentation has also proved useful in the study of optical coatings, hard coatings, and materials with surfaces modified by ion implantation and laser treatment.

PZT thin films grown by multi-target sputtering: Analysis of thin film stress

1998 ◽  
Vol 21 (1-4) ◽  
pp. 461-467 ◽  
Author(s):  
R. Bruchhaus ◽  
D. Pitzer ◽  
R. Primig ◽  
M. Schreiter ◽  
W. Wersing
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Stress ◽  
Pzt Thin Films ◽  
Thin Film Stress

Using Thin Film Stress for Nanoscaled Sensors

2010 ◽  
Vol 638-642 ◽  
pp. 2028-2033
Author(s):  
Seid Jebril ◽  
Yogendra K. Mishra ◽  
Mady Elbahri ◽  
Lorenz Kienle ◽  
Henry Greve ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Hydrogen Adsorption ◽  
Field Effect Transistors ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Film Stress ◽  
Special Focus ◽  
Free Standing ◽  
Thin Film Stress

Thin film stress is often seen as an unwanted effect in micro- and nanostructures. Since recent years, we could employ thin film stress as a useful tool to create nanowires. By creating stress at predetermined breaking points, e.g., in microstructured photo resist thin films, cracks occur on the nanoscale in a well defined and reproducible manner [ ]. By using those as a simple mask for thin film deposition, nanowires can be created. More recently this fabrication scheme could be improved by utilizing delamination of the thin film, in order to obtain suitable shadow masks for thin film deposition in vacuum [ ]. Now, these stress based nanowires can be integrated in microelectronic devices and used as field effect transistors or as hydrogen sensors [ ]. For the functional part of the sensor, it was proposed that thin film stress created by hydrogen adsorption in the nanowire is the driving force. In terms of function, thin films can be also applied on free standing nanoscale whiskers or wires to modify their mechanical features or adding additional functionality. As a second example for the utilization of thin film stress, recent experiments on a piezoelectric and magnetostrictive material combination will be presented. These piezoelectric-magnetostrictive nano-composites are potential candidates for novel magnetic field sensors [ ]. In these composites the magnetostriction will be transferred to the piezoelectric component, resulting in a polarization of the piezoelectric material, that can be used as the sensor signal. The results of two different composite layouts will be presented and discussed with a special focus on the comparison between classical macroscopic composites and the novel nanocomposites.

Stress Stability of Poly-SiGe and Various Oxide Films in Humid Environments

2004 ◽  
Vol 854 ◽  
Author(s):  
Carrie W. Low ◽  
Brian L. Bircumshaw ◽  
Tatiana Dorofeeva ◽  
Gelila Solomon ◽  
Tsu-Jae King ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stresses ◽  
Film Stress ◽  
Long Period ◽  
Thin Film Stress ◽  
Curvature Measurement ◽  
Average Residual ◽  
Layer Thin Film ◽  
Over Time

ABSTRACTThis paper presents the stress stability of thin films for MEMS structural and sacrificial layers. The average residual stresses of the thin films were monitored via wafer curvature measurement over a long period of time. Poly-Si, poly-SiGe, poly-Ge and thermally growth SiO2 films are found to be stable in humid environments. Moisture makes LPCVD and TEOS-based PECVD SiO2 films more compressive over time. Multi-layer thin film stress is modeled with the same methodology used to derive the Stoney Equation [1].

Magnetostriction and thin-film stress in high magnetization magnetically soft FeTaN thin films

1996 ◽  
Vol 79 (8) ◽  
pp. 5005 ◽  
Author(s):  
M. K. Minor ◽  
B. Viala ◽  
J. A. Barnard
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Stress ◽  
Thin Film Stress

Investigation of PZT//LSCO/IPT//Aerogel Thin Film Composites for Uncooled Pyroelectric Ir Detectors

1998 ◽  
Vol 541 ◽  
Author(s):  
P.G. Clem ◽  
B.A. Tuttle ◽  
J.A. Ruffner ◽  
C.J. Brinker ◽  
R.W. Schwartz ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Properties ◽  
Infrared Detector ◽  
Dip Coating ◽  
Film Structure ◽  
Pyroelectric Coefficient ◽  
Film Stress ◽  
Ir Detectors ◽  
Thin Film Stress

AbstractA monolithic thin film structure for uncooled pyroelectric infrared detector arrays was developed to integrate thermally isolated Pb(Zr,Ti)O3-based thin films on silicon, with a low thermal conductivity, aerogel thin film interlayer. Aerogel thin films of 0.4-1.2μm thickness and 70-85% porosity were deposited on silicon substrates by dip coating to form a thermal isolation layer. 200-400nm thick Pb(Zr0.4Ti0.6)O3 films deposited on (La,Sr)CoO3[LSCO]//Pt electrodes atop these aerogel films displayed a remanent polarization Pr = 28μ C/cm2, pyroelectric coefficient p = 30 nC/cm2K, and calculated noise equivalent temperature difference NETD = 0.07°C. Processing of Pb(Zr,Ti)O3 thin films atop the aerogel interlayer structure required modifications to deposition and heat treatment methods to minimize tensile stress accumulation. Effects of thermal processing and thin film stress state on ferroelectric properties are also reported.

Synthesis of Nanocomposite thin film Ti/Al Multilayers and Ti-Aluminides

1996 ◽  
Vol 457 ◽  
Author(s):  
R. Banerjee ◽  
X. D. Zhang ◽  
S. A. Dregia ◽  
H. L. Fraser
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Layer Thickness ◽  
Thermodynamic Model ◽  
Interfacial Reactions ◽  
Experimental Results ◽  
Structural Transitions ◽  
Nanocomposite Thin Film ◽  
Multilayered Thin Films

ABSTRACTNanocomposite Ti/Al multilayered thin films have been deposited by magnetron sputtering. These multilayers exhibit interesting structural transitions on reducing the layer thickness of both Ti and Al. Ti transforms from its bulk stable hep structure to fee and Al transforms from fee to hep. The effect of ratio of Ti layer thickness to Al layer thickness on the structural transitions has been investigated for a constant bilayer periodicity of 10 nm by considering three different multilayers: 7.5 nm Ti / 2.5 nm Al, 5 nm Ti / 5 nm Al and 2.5 nm Ti / 7.5 nm Al. The experimental results have been qualitatively explained on the basis of a thermodynamic model. Preliminary experimental results of interfacial reactions in Ti/Al bilayers resulting in the formation of Ti-aluminides are also presented in the paper.

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