Formation Kinetics and Thin Film Stress of Tin Containing Intermetallic Compounds

1992 ◽  
Vol 264 ◽  
Author(s):  
Chin-Jong Chan ◽  
Jei-Wei Chang ◽  
Leo A. Chin
Keyword(s):  
Thin Film ◽  
Stress State ◽  
Intermetallic Compounds ◽  
Elevated Temperatures ◽  
Film Structure ◽  
Film Stress ◽  
Structure Evolution ◽  
Material System ◽  
Thin Film Stress ◽  
Formation Kinetics

AbstractThin film reactions and its influence on mechanical stress have been investigated in Cr/Cu/Sn and Cr/Ni/Sn multilayer structures. Thin film stresses of different intermetallic compounds in each material system were evaluated using substrate bending technique. Stress state in the thin film structures was round directly related to formation kinetics and thermal properties of intermetallics. In Cu-Sn system, a large internal stress increase in tension was generally observed after being heat treated at high temperatures. In Ni-Sn systems, formation of intermetallics is a relatively slow reaction at elevated temperatures as compared to that of Cu-Sn samples. Contrary to that of Cu-Sn system, formation of Ni-Sn intermetallics causes a decrease in stress in the thin film structure. The correlation of thin film stress state and the structure evolution at the interface is studied and discussed in details.

Investigation of PZT//LSCO/IPT//Aerogel Thin Film Composites for Uncooled Pyroelectric Ir Detectors

1998 ◽  
Vol 541 ◽  
Author(s):  
P.G. Clem ◽  
B.A. Tuttle ◽  
J.A. Ruffner ◽  
C.J. Brinker ◽  
R.W. Schwartz ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Properties ◽  
Infrared Detector ◽  
Dip Coating ◽  
Film Structure ◽  
Pyroelectric Coefficient ◽  
Film Stress ◽  
Ir Detectors ◽  
Thin Film Stress

AbstractA monolithic thin film structure for uncooled pyroelectric infrared detector arrays was developed to integrate thermally isolated Pb(Zr,Ti)O3-based thin films on silicon, with a low thermal conductivity, aerogel thin film interlayer. Aerogel thin films of 0.4-1.2μm thickness and 70-85% porosity were deposited on silicon substrates by dip coating to form a thermal isolation layer. 200-400nm thick Pb(Zr0.4Ti0.6)O3 films deposited on (La,Sr)CoO3[LSCO]//Pt electrodes atop these aerogel films displayed a remanent polarization Pr = 28μ C/cm2, pyroelectric coefficient p = 30 nC/cm2K, and calculated noise equivalent temperature difference NETD = 0.07°C. Processing of Pb(Zr,Ti)O3 thin films atop the aerogel interlayer structure required modifications to deposition and heat treatment methods to minimize tensile stress accumulation. Effects of thermal processing and thin film stress state on ferroelectric properties are also reported.

scholarly journals Controlling Thin-Film Stress and Wrinkling during Perovskite Film Formation

2018 ◽  
Vol 3 (6) ◽  
pp. 1225-1232 ◽  
Author(s):  
Kevin A. Bush ◽  
Nicholas Rolston ◽  
Aryeh Gold-Parker ◽  
Salman Manzoor ◽  
Jakob Hausele ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Formation ◽  
Film Stress ◽  
Thin Film Stress
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