Pulsed Laser Deposition of Piezoelectric Films for Micro-Fluidic Applications

1998 ◽  
Vol 541 ◽  
Author(s):  
W.J. Kim ◽  
J.C. Rife ◽  
J.S. Horwitz ◽  
R.C.Y. Auyeung ◽  
D.B. Chrisey ◽  
...  

AbtractThick films of piezoelectric materials have been grown by pulsed laser deposition (PLD) for use in the development of a programmable micro-fluidic controller. ZnO and BaTiO3 (BTO) films were deposited onto various substrates, including Au/Cr coated Si, Pt/Ti coated Si, and Au/Pd coated glass microchannel plates, at substrate temperatures from room temperature to 800 °C in a background pressure of O2 from 3 to 350 mTorr. ZnO films (∼5 µm thick) were single phase and (001) oriented. BTO films, 33 µm thick, on Pt/Ti/Si were single phase and polycrystalline. To fabricate piezoelectric acoustic transducer, an array of 2 × 4 gold electrodes was deposited onto the thick BTO films through a shadow mask by PLD. The transducers were attached to a simple fluidic circuit with a 1.6 × 1.6 mm cross section and used to generate a flow velocity of 1 mm/s at an operating frequency of 50 MHz.

2010 ◽  
Vol 257 (4) ◽  
pp. 1310-1313 ◽  
Author(s):  
Xiangli Ma ◽  
Jun Zhang ◽  
Jianguo Lu ◽  
Zhizhen Ye

2002 ◽  
Vol 16 (06n07) ◽  
pp. 825-829 ◽  
Author(s):  
TSUYOSHI YOSHITAKE ◽  
TAKASHI NISHIYAMA ◽  
TAKESHI HARA ◽  
KUNIHITO NAGAYAMA

Diamond thin films were grown on diamond (100) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using an ArF excimer laser. The suitable oxygen atmosphere of 5 × 10-2 Torr can etch the sp2 bonding fractions preferentially. At substrate temperatures between 550°C and 650°C, single-phase diamond films consisting of diamond crystal with diameters of 1 - 5 μm could be grown. The results demonstrated that the diamond thin films can be grown homoepitaxially using PLD by controlling the deposition parameters, such as the oxygen pressure and the substrate temperature.


2008 ◽  
Vol 8 (5) ◽  
pp. 2575-2577 ◽  
Author(s):  
Shubra Singh ◽  
M. S. Ramachandra Rao

Undoped ZnO films were deposited using pulsed laser deposition technique on Si and glass substrates in different O2 partial pressures (ranging from 10−5 mbar to 3 mbar) and substrate temperatures. When the substrate temperature is 500 °C and O2 partial pressure (pp) ∼ 3 mbar, randomly oriented ZnO hexagons were observed on glass substrate, whereas, dense ZnO hexagonal rod like structures (diameter ranging from 200–500 nm) were observed on Si substrate. The photoluminescence (PL) characterization of ZnO film grown on Si exhibited an intense defect free narrow excitonic emission in the UV region (Full width half maximum (FWHM) ∼ 11.26 nm) as compared to broad emission (FWHM ∼ 57.06 nm) from that grown on glass. The parent film emission was found to shift from UV to blue region on doping ZnO with Vanadium.


Vacuum ◽  
2006 ◽  
Vol 81 (1) ◽  
pp. 18-21 ◽  
Author(s):  
Yaodong Liu ◽  
Lei Zhao ◽  
Jianshe Lian

2006 ◽  
Vol 307 (2) ◽  
pp. 212-221 ◽  
Author(s):  
M. Diaconu ◽  
H. Schmidt ◽  
H. Hochmuth ◽  
M. Lorenz ◽  
G. Benndorf ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 131
Author(s):  
Tingting Xiao ◽  
Qi Yang ◽  
Jian Yu ◽  
Zhengwei Xiong ◽  
Weidong Wu

FePt nanoparticles (NPs) were embedded into a single-crystal MgO host by pulsed laser deposition (PLD). It was found that its phase, microstructures and physical properties were strongly dependent on annealing conditions. Annealing induced a remarkable morphology variation in order to decrease its total free energy. H2/Ar (95% Ar + 5% H2) significantly improved the L10 ordering of FePt NPs, making magnetic coercivity reach 37 KOe at room temperature. However, the samples annealing at H2/Ar, O2, and vacuum all showed the presence of iron oxide even with the coverage of MgO. MgO matrix could restrain the particles’ coalescence effectively but can hardly avoid the oxidation of Fe since it is extremely sensitive to oxygen under the high-temperature annealing process. This study demonstrated that it is essential to anneal FePt in a high-purity reducing or ultra-high vacuum atmosphere in order to eliminate the influence of oxygen.


2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.


2004 ◽  
Vol 36 (4-6) ◽  
pp. 403-408 ◽  
Author(s):  
D. O’Mahony ◽  
F. McGee ◽  
M. Venkatesan ◽  
J.G. Lunney ◽  
J.M.D. Coey

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