Structure and Physical Properties of Undoped ZnO and Vanadium Doped ZnO Films Deposited by Pulsed Laser Deposition

2008 ◽  
Vol 8 (5) ◽  
pp. 2575-2577 ◽  
Author(s):  
Shubra Singh ◽  
M. S. Ramachandra Rao
Keyword(s):  
Pulsed Laser Deposition ◽  
Full Width Half Maximum ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Glass Substrates ◽  
Partial Pressures ◽  
Excitonic Emission ◽  
Substrate Temperatures

Undoped ZnO films were deposited using pulsed laser deposition technique on Si and glass substrates in different O2 partial pressures (ranging from 10−5 mbar to 3 mbar) and substrate temperatures. When the substrate temperature is 500 °C and O2 partial pressure (pp) ∼ 3 mbar, randomly oriented ZnO hexagons were observed on glass substrate, whereas, dense ZnO hexagonal rod like structures (diameter ranging from 200–500 nm) were observed on Si substrate. The photoluminescence (PL) characterization of ZnO film grown on Si exhibited an intense defect free narrow excitonic emission in the UV region (Full width half maximum (FWHM) ∼ 11.26 nm) as compared to broad emission (FWHM ∼ 57.06 nm) from that grown on glass. The parent film emission was found to shift from UV to blue region on doping ZnO with Vanadium.

Growth and Characterization of Urea Doped p-Type ZnO Thin Film Grown by Pulsed Laser Deposition

2009 ◽  
Vol 67 ◽  
pp. 127-130 ◽  
Author(s):  
Majumdar Sayanee ◽  
Banerji Pallab
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Laser Deposition ◽  
Zno Films ◽  
Group V ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
P Type

In the present study we have used urea as the source for doping nitrogen in ZnO since the most successful acceptor type dopant is the group V element like nitrogen. The nitrogen doped ZnO films have been deposited on glass substrates using Pulsed Laser Deposition technique using 248 nm KrF laser at energy 300 mJ by varying the number of laser pulses with a repetition rate of 10 pulse/sec in vacuum (10-6 mbar) at a constant temperature of 300 °C. The XRD pattern confirms the formation of wurtzite structure of ZnO, which is polycrystalline in nature. We have also performed UV absorption spectroscopy and the band gap is found to be 3.4 eV. Resistivity of the film increases with the increase of thickness for the undoped ZnO samples where the carrier concentrations are found to be of the order of 1017 cm-3. The mobility of the as-grown film is found to be 24.9 cm2/V-s. After doping with nitrogen the carrier concentration drops to the order of 1015 cm-3 and the mobility becomes 1.5 cm2/V-s. The mobility slightly varies with thickness. The resistivity increases to 1.3 KΩ-cm and the film shows p-type behavior. The results are explained on the basis of the available theory.

scholarly journals The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 136
Author(s):  
Ping Tang ◽  
Weimin Wang ◽  
Bing Li ◽  
Lianghuan Feng ◽  
Guanggen Zeng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Photovoltaic Effect ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Sem Images ◽  
Glass Substrates ◽  
Substrate Temperatures

Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. However, AlSb is highly deliquescent and not stable, which has brought great difficulties to the applications. Based on the above situation, there are two purposes for preparing our Zn-doped AlSb (AlSb:Zn) thin films: One is to make P-type AlSb and the other is to find a way to suppress the deliquescence of AlSb. The AlSb:Zn thin films were prepared on glass substrates at different substrate temperatures by using the pulsed laser deposition (PLD) method. The structural, surface morphological, optical, and electrical properties of AlSb:Zn films were investigated. The crystallization of AlSb:Zn thin films was enhanced and the electrical resistivity decreased as the substrate temperature increased. The scanning electron microscopy (SEM) images indicated that the grain sizes became bigger as the substrate temperatures increased. The Raman vibration mode AlSb:Zn films were located at ~107 and ~142 cm−1 and the intensity of Raman peaks was stronger at higher substrate temperatures. In the experiment, a reduced band gap (1.4 eV) of the AlSb:Zn thin film was observed compared to the undoped AlSb films, which were more suitable for thin-film solar cells. Zn doping could reduce the deliquescent speed of AlSb thin films. The fabricated heterojunction device showed the good rectification behavior, which indicated the PN junction formation. The obvious photovoltaic effect has been observed in an FTO/ZnS/AlSb:Zn/Au device.

Polarity of heavily doped ZnO films grown on sapphire and SiO2 glass substrates by pulsed laser deposition

2011 ◽  
Vol 519 (18) ◽  
pp. 5875-5881 ◽  
Author(s):  
Yutaka Adachi ◽  
Naoki Ohashi ◽  
Takeshi Ohgaki ◽  
Tsuyoshi Ohnishi ◽  
Isao Sakaguchi ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Sio2 Glass ◽  
Glass Substrates ◽  
Heavily Doped ◽  
Doped Zno

Pulsed Laser Deposition of High Quality ZnO Thin Films

1992 ◽  
Vol 285 ◽  
Author(s):  
S. Amirhaghi ◽  
V. Craciun ◽  
F. Beech ◽  
M. Vickers ◽  
S. Tarling ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Visible Region ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Krf Excimer Laser ◽  
Substrate Temperatures ◽  
532 Nm

ABSTRACTThin films of ZnO have been grown on silicon and glass substrates by the pulsed laser deposition method. The effects of the oxygen partial pressure, substrate temperature and laser wavelength on the structural and optical properties of the films have been studied. The KrF excimer laser (at 248 nm) was found to produce better quality thin films than the frequency doubled Nd:YAG laser (532 nm). Layers produced at substrate temperatures as low as 300°C were c-axis oriented with a FWHM value for the 002 XRD reflection less than 0.2° and exhibited optical transmission higher than 80% in the visible region.

Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition

2005 ◽  
Vol 244 (1-4) ◽  
pp. 377-380 ◽  
Author(s):  
Z.Q. Chen ◽  
S. Yamamoto ◽  
A. Kawasuso ◽  
Y. Xu ◽  
T. Sekiguchi
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films

Germanium Nanostructures Fabricated by PLD

1998 ◽  
Vol 536 ◽  
Author(s):  
K. M. Hassan ◽  
A. K. Sharma ◽  
J. Narayan ◽  
J. F. Muth ◽  
C. W. Teng
Keyword(s):  
Pulsed Laser Deposition ◽  
Electronic Transport ◽  
Pulsed Laser ◽  
Single Layer ◽  
Laser Deposition ◽  
Transmission Electron ◽  
The Matrix ◽  
Average Size ◽  
Substrate Temperatures

AbstractQuantum confined nanostructures of semiconductors such as Ge and Si are being actively studied due to their interesting optical and electronic transport properties. We fabricated Ge nanostructures buried in the matrix of polycrystalline-AIN grown on Si(111) by pulsed laser deposition at lower substrate temperatures than that used in previous studies. The characterization of these structures was performed using high resolution transmission electron microscopy (HRTEM), photoluminescence and Raman spectroscopy. HRTEM observations show that the Ge islands are single crystal with a pyramidal shape. The average size of Ge islands was determined to be 15 nm, considerably smaller than that produced by other techniques. The Raman spectrum reveals a peak downward shift, upto 295 cm−1, of the Ge-Ge mode caused by quantum confinement in the Ge-dots. Photoluminescence (PL) was observed both with a single layer of Ge nanodots embedded in the AlN matrix and from ten layers of dots interspersed with AIN. The PL of the dots was blue shifted by ˜0.266 eV from the bulk Ge value of 0.73 eV at 77 K, resulting in a distinct peak at ˜1.0 eV. The full width at half maximum (FWHM) of the peak was 13 meV, for the single layer and 8 meV for the ten layered sample, indicating that the Ge nanodots are fairly uniform in size, which was found to be consistent with our HRTEM results. The importance of pulsed laser deposition (PLD) in fabricating novel nanostructures is discussed.

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