The Effect of Xe Ion Beam Treatment on the Interaction Between Gold and GaAs

1992 ◽  
Vol 260 ◽  
Author(s):  
B. Pécz ◽  
G. Radnóczi ◽  
Zs. J. Horváth ◽  
P. B. Barna ◽  
Erika Jároli ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ion Beam ◽  
High Resolution Electron Microscopy ◽  
Gaas Layer ◽  
High Dose ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Ion Beam Treatment ◽  
Defective Area

ABSTRACTThe effect of the defective nature of the substrate on the alloying behaviour of Xe implanted Au(55 ran)/n-GaAs system was studied using cross sectional transmission electron microscopy.Low dose Xe implantation (700 keV, 1*1014 ions/cm2) caused the formation of about SO nm thick polycrystalline region of GaAs beneath the gold layer. Annealing the implanted sample at 450°C gold diffused through the polycrystalline GaAs region and formed large pits of Au(Ga) solid solution in the defective area of GaAs having stacking faults and twins. The formation of a regrown GaAs covering layer was observed on the top of the reacted metallization simultaneously.High dose implantation of Xe++ ions resulted in the formation of amorphous GaAs layer with a thickness of about 750 nm. Twinned regions of GaAs were observed at the amorphous - crystalline GaAs interface by high resolution electron microscopy. Ion beam caused phase transition was observed in this sample. The amorphous GaAs region recrystallized to single crystalline GaAs due to annealing at 400°C.

Heteroepitaxial Diamond Formed on Silicon Wafer Observed by High Resolution Electron Microscopy

1994 ◽  
Vol 357 ◽  
Author(s):  
Jie Yang ◽  
Zhangda Lin ◽  
Li-Xin Wang ◽  
Sing Jin ◽  
Ze Zhang
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
Diamond Crystals ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Hot Filament

AbstractDiamond films with high preferential orientation (111) on silicon (100) crystalline orientation substrates had been obtained by hot-filament chemical vapor deposition (HFCVD) method. X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, and high-resolution cross-sectional transmission electron microscopy (HREM) are used to characterizate the structure and morphology of the synthesised diamond films. Diamond (111) plans had been local grown epitaxially on the Si(100) substrate observed by HREM. SEM photographes show that plane diamond crystals have been obtained.

High Dose Implantation of Nickel into Silicon

1985 ◽  
Vol 54 ◽  
Author(s):  
G. J. Campisi ◽  
H. B. DIETRICH ◽  
M. Delfino ◽  
D. K. Sadana
Keyword(s):  
Electron Microscopy ◽  
Solid Phase ◽  
Ion Beam ◽  
Depth Profiling ◽  
Silicon Wafers ◽  
High Dose ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering

ABSTRACTSeveral silicon wafers were implanted with 58Ni+ at an energy of 170 keV and a current density of 12 μA cm-2 to doses between 5 × 1015 and 1.8 × 1018 ions cm-2. The substrates were phosphorus doped n-type <100> Czochralski grown silicon wafers. The wafers were water cooled during implantation and the surface temperatures was monitored with an infrared pyrometer and controlled to < 70°C. Samples were subsequently furnace annealed at 900°C for 30 min in nitrogen. The as-implanted and annealed samples were analyzed using cross-sectional transmission electron microscopy (XTEM), Rutherford backscattering (RBS) spectroscopy, spreading resistance depth profiling (SRP), and scanning electron microscopy (SEM). Micro-crystallites of NiSi2 (2–5nm) buried within an amorphous matrix formed during the 1.5 × 1017 ions cm-2 dose implantation. For higher doses above 3 × 1017 Ni+ cm-2, ion beam sputtering occurred. After annealing, rapid diffusion of nickel and solid-phase recrystallization of the amorphous regions occurred.

Investigation of the microstructure of hetero-epitaxial Si/CoSi2/Si (001) and (111) structures by TEM

1990 ◽  
Vol 48 (4) ◽  
pp. 386-387
Author(s):  
C.W.T. Bulle-Lieuwma ◽  
A.H. van Ommen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
High Resolution Electron Microscopy ◽  
High Dose ◽  
Metal Base ◽  
Si Substrates ◽  
Transmission Electron ◽  
Resolution Electron ◽  
High Dose Implantation

Hetero-epitaxial Si/CoSi2/Si structures have been formed by high dose implantation of Co+ ions into (001) and (111) Si substrates and subsequent annealing of the substrates. Such structures are of interest due to their application as metal base base and permeable base transistors. We have studied the microstructure of both as-implanted and annealed structures by transmission electron microscopy (TEM), including high-resolution electron microscopy (HREM). HREM was performed using a Philips 300 kV electron microscope with a point resolution of approximately 0.19 nm. CoSi2 layers have been formed by implantation of 170 keV Co+ ions at a temperature of 450°C and to doses of 1× 1017 and 2× 1017 Co+ / cm2. The wafers were annealed for 30 minutes in a N2/H2 ambient at a temperature of 1000°C. In the as implanted structures, the Co is present in the form of epitaxial CoSi2 precipitates. Precipitates occur both in an aligned (A-type) and twinned (B-type) orientation. Annealing of the implanted structures results in the formation of a buried CoSi2 layer of aligned orientation. A striking observation is that the CoSi2 layer has an aligned orientation with respect to the Si matrix, whereas CoSi2 grown on top of (111) Si has a twinned orientation. The mechanism behind this phenomenon is not fully understood. We think that geometrical aspects play a crucial role. Therefore we have studied in detail the geometry of the coordination of coherent CoSi2 precipitates.

scholarly journals Formation of Buried Oxide in Mev Oxygen Implanted Silicon

1987 ◽  
Vol 107 ◽  
Author(s):  
C.W. Nieh ◽  
F. Xiong ◽  
C. C. Ahn ◽  
Z. Zhou ◽  
D. N. Jamieson ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution Electron Microscopy ◽  
Chemical Information ◽  
Cross Sectional ◽  
Buried Oxide ◽  
Implantation Temperature ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Electron Energy Loss

AbstractWe have studied the formation of buried oxide in MeV oxygen implanted Si. A continuous oxide layer is formed in the samples implanted with 2x1018/cm2 oxygen and annealed at 1300° C. The microstructures are studied by cross-sectional transmission electron microscopy and high resolution electron microscopy. Chemical information was obtained by electron energy loss spectroscopy. The effects of implantation temperature are studied. Implantation at a low substrate temperature leads to a well-defined buried SiO2 layer, inhibits the formation of oxide precipitates in the silicon, and reduces silicon inclusions in the SiO2.

Characterization of ErAs/GaAs and GaAs/ErAs/GaAs Structures

1989 ◽  
Vol 160 ◽  
Author(s):  
Jane G. Zhu ◽  
Chris J. Palmstrøm ◽  
Suzanne Mounier ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
High Resolution Electron Microscopy ◽  
Gaas Layer ◽  
Misfit Dislocations ◽  
Weak Beam ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Small Grains ◽  
Major Defect

AbstractA series of ErAs/GaAs and GaAs/ErAs/GaAs epilayers have been grown on (100) GaAs substrates by molecular-beam epitaxy. Misfit dislocations at the ErAs/GaAs interface have been analyzed using the weak-beam technique of transmission electron microscopy. The microstructure of GaAs/ErAs/GaAs layers have been characterized using conventional and high-resolution electron microscopy. Twinning inside the upper GaAs layer is the major defect. Although the desired epitactic (100) GaAs on (100) ErAs does dominate, small grains of GaAs with (111) or {122} orientations have been observed at the GaAs/ErAs heterojunction.

3D electron microscopy investigations of human dentin at the micro/nano-scale using focused ion beam based nanostructuring

RSC Advances ◽  
2015 ◽  
Vol 5 (10) ◽  
pp. 7196-7199 ◽  
Author(s):  
Meltem Sezen ◽  
Sina Sadighikia
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Resolution Electron Microscopy ◽  
High Definition ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Human Dentin ◽  
Microscopy Techniques

In this study, high resolution electron microscopy techniques, such as Focused Ion Beam (FIB), Scanning Electron Microscopy (SEM) and High Resolution Transmission Electron Microscopy (HRTEM) allowed for revealing micro/nano features within human dentin with high definition and accuracy.

Tem and Hrem Study Of mGH-Temperature Aluminum Ion Implantation to 6H-SiC

1998 ◽  
Vol 512 ◽  
Author(s):  
A. A. Suvorova ◽  
I. O. Usov ◽  
O. I. Lebedev ◽  
G. Van Tendeloo ◽  
A. V. Suvorov
Keyword(s):  
Electron Microscopy ◽  
Low Dose ◽  
High Resolution Electron Microscopy ◽  
Implantation Dose ◽  
Structural Defects ◽  
High Dose ◽  
Dislocation Loops ◽  
Aluminum Ions ◽  
Transmission Electron ◽  
Resolution Electron

ABSTRACT6H silicon carbide wafers were implanted with 40–50 keV aluminum ions to a dose of 1.5 × 1014 – 1.5 × 1016 cm−2 at high temperatures (1100°C–1700°C). The substrate temperature and the implantation dose were varied to investigate the influence of the implantation parameters on the formation of structural defects. Conventional transmission electron microscopy (TEM) and high resolution electron microscopy (HREM) techniques were applied to study the defects. We found that for low dose implants {0001} interstitial dislocation loops are formed but for high dose implants aluminum precipitates associated with {0001} half-loops are formed.

Interface structures in polycrystalline ceramic materials

1986 ◽  
Vol 44 ◽  
pp. 468-471
Author(s):  
K. J. Morrissey
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Physical And Mechanical Properties ◽  
High Resolution Electron Microscopy ◽  
Ceramic Materials ◽  
Polycrystalline Materials ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Interface Structures

Grain boundaries and interfaces play an important role in determining both physical and mechanical properties of polycrystalline materials. To understand how the structure of interfaces can be controlled to optimize properties, it is necessary to understand and be able to predict their crystal chemistry. Transmission electron microscopy (TEM), analytical electron microscopy (AEM,), and high resolution electron microscopy (HREM) are essential tools for the characterization of the different types of interfaces which exist in ceramic systems. The purpose of this paper is to illustrate some specific areas in which understanding interface structure is important. Interfaces in sintered bodies, materials produced through phase transformation and electronic packaging are discussed.

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