Single-phase growth studies of GaP on Si by solid-source molecular beam epitaxy

2004 ◽  
Vol 22 (3) ◽  
pp. 1450 ◽  
Author(s):  
Xiaojun Yu ◽  
Paulina S. Kuo ◽  
Kai Ma ◽  
Ofer Levi ◽  
Martin M. Fejer ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Phase ◽  
Phase Growth ◽  
Growth Studies

Growth studies of (Al,Ga,In)As on InP by molecular beam epitaxy

1993 ◽  
Vol 127 (1-4) ◽  
pp. 755-758 ◽  
Author(s):  
J.-P. Reithmaier ◽  
S. Hausser ◽  
H.P. Meier ◽  
W. Walter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Studies

Growth studies of GaP on Si by gas-source molecular beam epitaxy

1996 ◽  
Vol 164 (1-4) ◽  
pp. 256-262 ◽  
Author(s):  
W.G. Bi ◽  
X.B. Mei ◽  
C.W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source ◽  
Growth Studies

Systematic growth studies of narrow constrictions formed by molecular beam epitaxy on prepatterned substrates

2000 ◽  
Vol 74 (1-3) ◽  
pp. 25-31 ◽  
Author(s):  
M. Lipinski ◽  
H. Schuler ◽  
P. Veit ◽  
R. Clos ◽  
K. Eberl
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Studies

scholarly journals Molecular beam epitaxy of single phase GeMnTe with high ferromagnetic transition temperature

2011 ◽  
Vol 323 (1) ◽  
pp. 363-367 ◽  
Author(s):  
M. Hassan ◽  
G. Springholz ◽  
R.T. Lechner ◽  
H. Groiss ◽  
R. Kirchschlager ◽  
...  
Keyword(s):  
Transition Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Phase ◽  
Ferromagnetic Transition

Heteroepitaxy of Si and Ge on CaF2/Si (111)

1985 ◽  
Vol 54 ◽  
Author(s):  
R. W. Fathauer ◽  
L. J. Schowalter ◽  
N. Lewis ◽  
E. L. Hall
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Qualitative Model ◽  
Island Growth ◽  
Island Formation ◽  
Growth Studies ◽  
Si Epitaxy

ABSTRACTSi and Ge layers have been grown on CaF /Si (111) by molecular beam epitaxy (MBE). The use of thin room-tempe rature predeposits [1] with Ge epitaxy has been found to improve the growth. Studies of the initial stages of Ge epitaxy indicate that island growth occurs, and evidence also indicates island formation occurs in the Si case as well. A qualitative model is presented which explains many of the features observed in these systems and suggests reasons for the superior growth of Ge compared to Si. Finally, use of a Ge Si, /Si superlattice is shown to improve Si epitaxy.

Preparation of single phase 2H-MoTe2 films by molecular beam epitaxy

2020 ◽  
Vol 523 ◽  
pp. 146428
Author(s):  
Trung T. Pham ◽  
Roshan Castelino ◽  
Alexandre Felten ◽  
Robert Sporken
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Phase
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