In Situ Ellipsometric Studies of Palladium Silicide Formation

1985 ◽  
Vol 54 ◽  
Author(s):  
S. M. Kelso ◽  
R. J. Nemanich ◽  
C. M. Doland
Keyword(s):  
Raman Spectroscopy ◽  
Solid State ◽  
Dielectric Function ◽  
Solid State Reaction ◽  
Silicide Formation ◽  
Spectroscopy Studies ◽  
Palladium Silicide ◽  
Deposited Films

ABSTRACTWe have studied the formation of palladium suicide on clean silicon <111> surfaces using in situ spectroscopie ellipsometry. Pd films of thicknesses from 5 to 50 A were studied both as deposited and after annealing to complete the reaction to Pd2Si. The measured dielectric function spectra were analyzed to determine the amounts of Pd2Si and unreacted Pd. Evidence of Pd-Si solid state reaction was detected after all depositions. In the as-deposited films the fraction of suicide increased with the thickness, up to about 40% for the thickest films (50 Å Pd), while the annealed films were completely reacted. These results are consistent with earlier Raman spectroscopy studies.

Stress evolution in a Ti/Al(Si,Cu) dual layer during annealing

2001 ◽  
Vol 673 ◽  
Author(s):  
Ola Bostrom ◽  
Patrice Gergaud ◽  
Olivier Thomas ◽  
Philippe Boivin
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Silicide Formation ◽  
Stress Evolution ◽  
Average Force ◽  
Aluminum Films ◽  
Titanium Aluminum ◽  
Curvature Measurements ◽  
Volume Decrease

ABSTRACTMechanical stress and stress evolution in interconnections may cause reliability problems in IC circuits. It is thus of great importance to understand the origin of this stress.In this paper, the stress evolution during the solid state reaction between blanket titanium and aluminum films has been studied by in-situ substrate curvature measurements. Whereas the formation of TiAl3 is expected to induce large tensile stress because of a global volume decrease of 6-8%, curvature measurements of titanium/aluminum dual layers during annealing at 450°C suggests the formation of a compressive compound.The evolution of the average force per unit width of the layer during the solid state reaction is interpreted on the basis of a phenomenological model used to describe stress evolution during silicide formation.

In Situ Raman Spectroscopy Studies on La2CaB10O19 Crystal Growth

2020 ◽  
Vol 20 (10) ◽  
pp. 6604-6609
Author(s):  
Shanshan Liu ◽  
Guochun Zhang ◽  
Kai Feng ◽  
Yanyang Han ◽  
Tao He ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Crystal Growth ◽  
In Situ Raman Spectroscopy ◽  
In Situ Raman ◽  
Spectroscopy Studies

scholarly journals IN-SITU RAMAN SPECTROSCOPY STUDIES OF OXYGEN SPILLOVER AT SOLID OXIDE FUEL CELL ANODES

2020 ◽  
Vol 18 (1) ◽  
pp. 9-19
Author(s):  
G.M. Eliseeva ◽  
◽  
I.N. Burmistrov ◽  
D.A. Agarkov ◽  
A.A. Gamova ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Fuel Cell ◽  
Solid Oxide Fuel Cell ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
In Situ Raman Spectroscopy ◽  
In Situ Raman ◽  
Oxygen Spillover ◽  
Spectroscopy Studies

In situ Raman spectroscopy studies on the methanol oxidation over silver surface

1997 ◽  
Vol 120 (1-2) ◽  
pp. 99-105 ◽  
Author(s):  
Jinhai Wang ◽  
Xinhua Xu ◽  
Jingfa Deng ◽  
Yuanyan Liao ◽  
Bifeng Hong
Keyword(s):  
Raman Spectroscopy ◽  
Methanol Oxidation ◽  
Silver Surface ◽  
In Situ Raman Spectroscopy ◽  
In Situ Raman ◽  
Spectroscopy Studies

In situ catalytic formation of graphene-like graphitic layer decoration on Na3V2−xGax(PO4)3 (0 ≤ x ≤ 0.6) for ultrafast and high energy sodium storage

2019 ◽  
Vol 7 (9) ◽  
pp. 4660-4667 ◽  
Author(s):  
Qiao Hu ◽  
Jia-Ying Liao ◽  
Xiao-Dong He ◽  
Shuo Wang ◽  
Li-Na Xiao ◽  
...  
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
High Energy ◽  
Reaction Process ◽  
Graphitic Layer ◽  
Sodium Storage

A series of Na3V2−xGax(PO4)3 (x = 0, 0.1, 0.2, 0.4 and 0.6) with in situ catalytic formation of graphene-like graphitic layer decoration are synthesized via a solid-state reaction process.

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