Multiscale Analysis of Interfacial Stability and Misfit Dislocation Formation in Layer-By-Layer Semiconductor Heteroepitaxy

1998 ◽  
Vol 538 ◽  
Author(s):  
L. A. Zepeda-Ruiz ◽  
D. Maroudas ◽  
W. H. Weinberg
Keyword(s):  
Misfit Dislocation ◽  
Morphological Characteristics ◽  
Film Surface ◽  
Dislocation Network ◽  
Recent Experimental Data ◽  
Layer By Layer ◽  
Interfacial Stability ◽  
Strain Fields ◽  
Dislocation Formation ◽  
Continuum Elasticity

AbstractA theoretical analysis based on continuum elasticity theory and atomistic simulations is presented of the interfacial stability with respect to misfit dislocation formation, the strain fields, and the film surface morphology during layer-by-layer semiconductor heteroepitaxy. The energetics of the transition from a coherent to a semicoherent interface consisting of a misfit dislocation network, the structure of this semicoherent interface, the resulting strain fields and the morphological characteristics of the epitaxial film surfaces are calculated for InAs/GaAs(111)A. Continuum elasticity is found to describe the atomistic simulation results very well. Our theoretical results are discussed in the context of recent experimental data.

Interfacial Stability and Surface Morphology in Layer-By-Layer Semiconductor Heteroepitaxy Luis

1998 ◽  
Vol 528 ◽  
Author(s):  
A. Zepeda-Ruiz ◽  
Dimitrios Maroudas ◽  
W. Henry Weinberg
Keyword(s):  
Surface Morphology ◽  
Misfit Dislocation ◽  
Finite Thickness ◽  
Surface Profile ◽  
Film Surface ◽  
Layer Growth ◽  
Recent Experimental Data ◽  
Layer By Layer ◽  
Interfacial Stability ◽  
Strained Films

AbstractA theoretical analysis based on continuum elasticity theory and atomistic simulations is presented of the interfacial stability with respect to misfit dislocation formation and of the film surface morphology during layer-by-layer growth semiconductor heteroepitaxy. The strain in the coherently strained films, the energetics of a transition from a coherent to a semicoherent interface consisting of misfit dislocation arrays or networks, and the morphological details of the film surface profile are calculated for InAs/GaAs(110) and InAs/GaAs(111)A. The analysis is presented for the general case of heteroepitaxy on a finite-thickness compliant substrate. The results are discussed in the context of recent experimental data.

Interfacial Stability and Misfit Dislocation Formation in InAs/Gaas(110) Heteroepitaxy

1997 ◽  
Vol 505 ◽  
Author(s):  
Luis A. Zepeda-Ruiz ◽  
Dimitrios Maroudas ◽  
W. Henry Weinberg
Keyword(s):  
Misfit Dislocation ◽  
Film Surface ◽  
Atomic Scale ◽  
Recent Experimental Data ◽  
Misfit Dislocations ◽  
Interfacial Stability ◽  
Coherent Interface ◽  
Gaas Buffer Layer ◽  
Critical Film Thickness ◽  
Dislocation Formation

ABSTRACTA comprehensive atomic-scale study is presented of the mechanical behavior of the InAs epitaxial film, the interfacial stability with respect to misfit dislocation formation, and the film surface morphology in InAs/GaAs(110) heteroepitaxy. If a GaAs buffer layer of ten-monolayer thickness is used in the epitaxial growth, a transition is predicted from a coherent to a semi- coherent interface consisting of a regular array of edge interfacial misfit dislocations at a critical film thickness of six monolayers. A second transition to a semicoherent interface consisting of a completely developed network of perpendicularly intersecting misfit dislocations is predicted at thicknesses greater than 150 monolayers. Our simulation results are in excellent agreement with recent experimental data.

Interfacial stability and misfit dislocation formation in InAs/GaAs(110) heteroepitaxy

1998 ◽  
Vol 411 (3) ◽  
pp. L865-L871 ◽  
Author(s):  
Dimitrios Maroudas ◽  
Luis A. Zepeda-Ruiz ◽  
W.Henry Weinberg
Keyword(s):  
Misfit Dislocation ◽  
Interfacial Stability ◽  
Dislocation Formation

Epitaxial growth manner and structure of superconducting oxide films

1990 ◽  
Vol 48 (4) ◽  
pp. 2-3
Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Film Surface ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Initial Growth ◽  
In Situ Growth ◽  
High Quality ◽  
Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

Misfit Dislocations in the Ilmenite (FeTiO3)-Hematite (Fe2O3) System

1980 ◽  
Vol 38 ◽  
pp. 212-213 ◽  
Author(s):  
K.P.D. Lagerlöf ◽  
A.H. Heuer ◽  
T.E. Mitchell
Keyword(s):  
Misfit Dislocation ◽  
Lattice Parameters ◽  
Dislocation Network ◽  
Misfit Dislocations ◽  
Space Group ◽  
Two Phases ◽  
Hematite Fe2o3

It has been reported by Lally et. al. [1] that precipitates of hematite (Fe2O3, space group R3c) in a matrix of ilmenite (FeTiO3, space group R3) are lens shaped and flattened along the [0001]-direction. The coherency across the interface is lost by the introduction of a misfit dislocation network, which minimizes the strain due to the deviation in lattice parameters between the two phases [2]. The purpose of this paper is to present a new analysis of this network.

Relationship between misfit-dislocation formation and initial threading-dislocation density in GaInN/GaN heterostructures

2015 ◽  
Vol 54 (11) ◽  
pp. 115501 ◽  
Author(s):  
Motoaki Iwaya ◽  
Taiji Yamamoto ◽  
Daisuke Iida ◽  
Yasunari Kondo ◽  
Mihoko Sowa ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Misfit Dislocation ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Dislocation Formation

Self-assembly layer-by-layer fabrication using porphyrin dye anion and polycation

2009 ◽  
Vol 13 (07) ◽  
pp. 774-778 ◽  
Author(s):  
Byung-Soon Kim ◽  
Young-A Son
Keyword(s):  
Ultrathin Films ◽  
Self Assembly ◽  
Film Surface ◽  
Layer By Layer ◽  
Preparation Technique ◽  
Force Microscopy ◽  
Atomic Force ◽  
Diallyldimethylammonium Chloride ◽  
Afm Analysis ◽  
Progressive Growth

In this study, self-assembled alternating film using poly(diallyldimethylammonium chloride) (PDDAC) and meso-tetrakis(4-carboxyphenyl)porphyrin (MTCP) was prepared as a multilayer deposition on glass substrate. This preparation technique for dye deposition may provide new feasibilities to achieve the manufacture of ultrathin films for nanotechnology application. The deposition films were characterized by UV-vis spectrophotometer and Atomic Force Microscopy (AFM) analysis. The results of UV-vis spectra showed that the absorbance characteristic of the multilayer films linearly increased with an increased number of PDDAC and MTCP bilayers. AFM analysis showed the film surface was relatively uniform and the progressive growth of layers was determined.

The effect of implantation temperature on the mechanism of misfit dislocation formation

1978 ◽  
Vol 45 (2) ◽  
pp. 377-385 ◽  
Author(s):  
V. V. Kalinin ◽  
N. N. Gerasimenko ◽  
S. I. Stenin
Keyword(s):  
Misfit Dislocation ◽  
Implantation Temperature ◽  
Dislocation Formation

scholarly journals Mechanical Behavior of Differently Oriented Electron Beam Melting Ti–6Al–4V Components Using Digital Image Correlation

2018 ◽  
Vol 141 (1) ◽  
Author(s):  
Edel Arrieta ◽  
Mohammad Haque ◽  
Jorge Mireles ◽  
Calvin Stewart ◽  
Cesar Carrasco ◽  
...  
Keyword(s):  
Electron Beam ◽  
Digital Image Correlation ◽  
Failure Analysis ◽  
Digital Image ◽  
Electron Beam Melting ◽  
Measuring Method ◽  
Image Correlation ◽  
Layer By Layer ◽  
Strain Fields ◽  
Shear Effects

Mechanical properties of additive manufactured metal components can be affected by the orientation of the layer deposition. In this investigation, Ti–6Al–4V cylindrical specimens were fabricated by electron beam melting (EBM) at four different build angles (0 deg, 30 deg, 60 deg, and 90 deg) and tested as per ASTM E8 Standard Test Methods for Tension Testing of Metallic Materials. With the layer-by-layer fabrication suggesting granting anisotropic properties to the builds, strain fields were recorded by digital image correlation (DIC) in the search for shear effects under uniaxial loads. For the validation of this measuring method, axial strains were measured with a clip extensometer and a virtual extensometer, simultaneously. Failure analysis of the specimens at different orientations was conducted to evidence the recording of shear strain fields. The failure analysis included fractography, optical micrographs of the microstructure distribution, and failure profiles displaying different failure features associated with the layering orientation. Additionally, an experimental study case of how the failure mode of components can potentially be designed from the fabrication process is presented. At the end, remarks about the shear effects found, and an insight of the possibility of designing components by failure for safer structures are discussed.

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