Nucleation Processes in Si CVD on Ultrathin SiO2 Layers

1998 ◽  
Vol 536 ◽  
Author(s):  
T. Yasuda ◽  
D. S. Hwang ◽  
K. Ikuta ◽  
S. Yamasaki ◽  
K. Tanaka
Keyword(s):  
Oxide Surfaces ◽  
Nucleation Density ◽  
Plasma Oxidation ◽  
Oxide Layers ◽  
Thermal Oxide ◽  
Uv Ozone ◽  
Strained Bonds

AbstractWe investigate nucleation densities in UHV-CVD of Si on ultrathin SiO2 layers (0.2-2 nm) which were prepared by three different oxidation methods: thermal, UV-ozone, and plasma oxidation. The experiments changing the Si2H6 pressure in UHV-CVD indicate that these oxide surfaces have preferred sites for nucleation. Among the three oxidation methods, the nucleation density, Ns, on the thermal oxide is the lowest, while the plasma oxide shows the highest Ns. These results suggest that strained bonds and ion-induced damages in the oxide layers assist nucleation. For UV-ozone and plasma oxides Ns is independent of orientation, reconstruction, and morphology of the initial Si surface.

Development of Backside Scanning Capacitance Microscopy Technique for Advanced SOI Microprocessors

2006 ◽  
Author(s):  
Vinod Narang ◽  
P. Muthu ◽  
J.M. Chin ◽  
Vanissa Lim
Keyword(s):  
Plasma Etching ◽  
Data Interpretation ◽  
Parameters Optimization ◽  
Scanning Capacitance Microscopy ◽  
Microscopy Technique ◽  
Thermal Oxide ◽  
Specific Analysis ◽  
Thin Oxide ◽  
P Type ◽  
Uv Ozone

Abstract Implant related issues are hard to detect with conventional techniques for advanced devices manufactured with deep sub-micron technology. This has led to introduction of site-specific analysis techniques. This paper presents the scanning capacitance microscopy (SCM) technique developed from backside of SOI devices for packaged products. The challenge from backside method includes sample preparation methodology to obtain a thin oxide layer of high quality, SCM parameters optimization and data interpretation. Optimization of plasma etching of buried oxide followed by a new method of growing thin oxide using UV/ozone is also presented. This oxidation method overcomes the limitations imposed due to packaged unit not being able to heat to high temperature for growing thermal oxide. Backside SCM successfully profiled both the n and p type dopants in both cache and core transistors.

Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD

2014 ◽  
Vol 395 ◽  
pp. 55-60 ◽  
Author(s):  
Xiaoye Wang ◽  
Xiaoguang Yang ◽  
Wenna Du ◽  
Haiming Ji ◽  
Shuai Luo ◽  
...  
Keyword(s):  
Oxide Layers ◽  
Thermal Oxide ◽  
Inas Nanowires

Chemical Structure of Native Oxide Grown on Hydrogenterminated Silicon Surfaces

1992 ◽  
Vol 259 ◽  
Author(s):  
M. Takakura ◽  
T. Yasaka ◽  
S. Miyazaki ◽  
M. Hirose
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Structure ◽  
Pure Water ◽  
Silicon Surfaces ◽  
Native Oxide ◽  
Appreciable Amount ◽  
X Ray ◽  
Thermal Oxide ◽  
Phonon Peak ◽  
Strained Bonds

ABSTRACTChemical bonding features and suboxide compositions in native oxide grown on chemically-cleaned hydrogen-terminated Si(100) surfaces stored in pure water have been studied by using surface sensitive infrared spectroscopy and x-ray photoelectron spectroscopy. The LO phonon peak for the native oxide is located at 1210cm−1, which is shifted to a significantly lower wavenumber side than the ultrathin thermal oxide peak at 1250cm−1. This is because an appreciable amount of SiHx bonds are incorporated in the native oxide/Si interface and such hydrogen termination in the network dramatically reduces strained bonds in the interface. Very weak Si2+ suboxide signal from the oxide grown in pure water is also explained by the incorporated SiHx bonds which interrupt the Si2+ suboxide formation in the interface.

Oxide layers on GaAs prepared by thermal, anodic and plasma oxidation: In-depth profiles and annealing effects

1979 ◽  
Vol 56 (1-2) ◽  
pp. 63-73 ◽  
Author(s):  
Kuniaki Watanabe ◽  
Masao Hashiba ◽  
Yuko Hirohata ◽  
Masanori Nishino ◽  
Toshiro Yamashina
Keyword(s):  
Plasma Oxidation ◽  
Oxide Layers ◽  
Depth Profiles ◽  
Annealing Effects

Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process

2012 ◽  
Vol 711 ◽  
pp. 228-232
Author(s):  
Elias Al Alam ◽  
Ignasi Cortés ◽  
T. Begou ◽  
Antoine Goullet ◽  
Frederique Morancho ◽  
...  
Keyword(s):  
Surface Preparation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Plasma Oxidation ◽  
Interface Quality ◽  
Mos Capacitors ◽  
Dielectric Thin Film ◽  
P Type ◽  
Mos Structures ◽  
Uv Ozone

MOS SiO2/GaN structures were fabricated with different surface preparation and different PECVD processes for the dielectric thin film deposition (ECR-PECVD and ICP-PECVD in continuous and pulsed modes). On the basis of C-V curves, the surface preparation steps, involving chemical etching with BOE, UV-Ozone oxidation and oxygen plasma oxidation, were compared in terms of resulting effective charge and interface trap density. A good SiO2/GaN interface quality was achieved for N-type MOS capacitances obtained both with continuousICPPECVD and ECR-PECVD deposition of the SiO2 dielectric. However, the interface quality is greatly reduced for MOS capacitors fabricated on P-type GaN.

Thick Oxide Layers on N and P SiC Wafers by a Depo-Conversion Technique

1999 ◽  
Vol 572 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
I. Khlebnikov ◽  
S. Soloviev ◽  
T. S. Sudarshan
Keyword(s):  
Electrical Properties ◽  
Effective Charge ◽  
High Frequency ◽  
Breakdown Field ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Oxide Layers ◽  
Oxide Breakdown ◽  
Thermal Oxide ◽  
Capacitance Voltage

ABSTRACTThe electrical properties of thick oxide layers on n and p-type 6H-SiC obtained by a depoconversion technique are presented. High frequency capacitance-voltage measurements on MOS capacitors with a ∼ 3000 Å thick oxide indicates an effective charge density comparable to that of MOS capacitors with thermal oxide. The breakdown field of the depo-converted oxide obtained using a ramp response technique indicates a good quality oxide with average values in excess of 6 MV/cm on p-type SiC and 9 MV/cm on n-type SiC. The oxide breakdown field was observed to decrease with increase in MOS capacitor diameter.

Corrosion Properties of Plasma Oxidized Titanium Nitride for Biomedical Applications

2015 ◽  
Vol 227 ◽  
pp. 471-474 ◽  
Author(s):  
Jerzy Robert Sobiecki ◽  
Agnieszka Brojanowska ◽  
Konrad Kowalczyk
Keyword(s):  
Titanium Nitride ◽  
Calcium Ions ◽  
Biomedical Applications ◽  
Oxidation Potential ◽  
Plasma Oxidation ◽  
Corrosion Properties ◽  
Oxide Layers ◽  
Oxidation Processes ◽  
Oxidation Potentials ◽  
Electrolytic Plasma Oxidation

The article compares the corrosion properties of oxide layers formed on titanium nitride (obtained in glow-discharge nitriding) using electrolytic plasma oxidation. The corrosion properties are analysed in correlation with the surface morphology, microstructure and chemical composition of the layers. The oxidation processes were carried out in 10% and 25% phosphoric acid (V) solutions containing Ca2+ calcium ions. In each of these environments, oxide layers were formed using three oxidation potentials: 200V, 400V and 600 V. The oxidation potential and the concentration of acid and calcium ions in the oxidation solution was shown to affect the morphology of the surface and the corrosion properties of the oxide layers obtained.

Corrosion Properties of Oxide Layers Produced on Titanium Nitride by Means of Plasma Electrolytic Oxidation of Various Duration

2015 ◽  
Vol 227 ◽  
pp. 475-478 ◽  
Author(s):  
Konrad Kowalczyk ◽  
Agnieszka Brojanowska ◽  
Jerzy Robert Sobiecki
Keyword(s):  
Titanium Nitride ◽  
Oxidation Potential ◽  
Process Time ◽  
Plasma Oxidation ◽  
Corrosion Properties ◽  
Oxide Layers ◽  
Oxidation Potentials ◽  
Electrolytic Oxidation ◽  
Plasma Electrolytic ◽  
The Impact

The corrosion resistance of oxide layers produced on titanium nitride (obtained in glow-discharge nitriding) by means of electrolytic oxidation at different potentials and durations is presented in the paper. The oxidation processes were carried out in phosphoric acid (V) (25wt.%) containing Ca2+ calcium ions. Two plasma oxidation potentials of 40 V and 100 V were applied. Treatment was carried out at two different process durations, i.e. 30 minutes and 120 minutes. The impact of oxidation potential and process time on the morphology of the surface and corrosion properties of the oxide layers obtained was examined.

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